Faculty Publications
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Item Design and fabrication of spectrally selective TiAlC/TiAlCN/TiAlSiCN/TiAlSiCO/TiAlSiO tandem absorber for higherature solar thermal power applications(Elsevier, 2015) Jyothi, J.; Chaliyawala, H.; Srinivas, G.; Nagaraja, H.S.; Barshilia, H.C.A new nanostructured TiAlC/TiAlCN/TiAlSiCN/TiAlSiCO/TiAlSiO tandem absorber has been designed for higherature solar thermal power applications. The first three layers in this tandem act as an absorbing layer, whereas, TiAlSiCO and TiAlSiO act as semi-transparent and anti-reflecting layers. The tandem absorber was deposited on stainless steel substrates using a four-cathode reactive direct current unbalanced magnetron sputtering system. The composition and thicknesses of the individual component layers have been optimized by adjusting the reactive flow rate of C2H2, N2, O2, and also Al, Ti and Si target power densities to achieve high absorptance (0.961) and low emittance (0.07 at 82 °C). The reflectance data showed that the absorptance increases gradually with shift of reflectance minimum to higher wavelengths from first layer to last layer (i.e., TiAlC to TiAlSiO). The thickness of optimized tandem absorber was calculated from the cross-sectional field-emission scanning electron microscopy images and confirmed using transmission electron microscopy. The performance evaluation of the tandem absorber has been evaluated by heating it in air and vacuum under cycling conditions at different temperatures. These results showed that the tandem absorber was stable up to 325 °C in air for 400 h and up to 650 °C in vacuum for 100 h, thus demonstrating its suitability for higherature solar thermal power generation applications. © 2015 Elsevier B.V. All rights reserved.Item Effect of current density on morphological, structural and optical properties of porous silicon(Elsevier Ltd, 2017) Ramesh, R.; Nagaraja, H.S.The morphology of porous silicon (PS) layers produced by electrochemical etching of n-type (100) silicon (Si) at different low current densities was studied using SEM, image J analysis and WSxM software. From FTIR spectroscopy analysis, the Si dangling bonds of the as-prepared PS layer have large amount of Hydrogen to form weak Si–H bonds. From Raman analysis, a full width half maximum (FWHM) of the Raman peak was gradually increased with increased current density, shifted towards lower energies due to reduce of crystallite size, the crystallite size in the PS varied from 63 nm to 20 nm depending on the current density. The optical response of the PS layer has been performed by the absorbance and Photoluminescence was studied experimentally in the visible range. The optical absorption and photo luminescence in PS is due to excitonic recombination between the defect states as well as on the surface of nanocrystals, and this was attributed to the presence of silicon hydride species which are confirmed by FTIR spectra. The red shift was observed in absorbance and Photoluminescence due to decrease in the size of Si crystallites and growth of Si=O bonds. The contact angle varied from 76° to 120.1°. From the wettability studies, the surface nature of the PS was converted from hydrophilic to hydrophobic when the current density increased. © 2017 Elsevier LtdItem Phosphorus doping of ZnO using spin-on dopant process: A better choice than costly and destructive ion-implantation technique(Elsevier B.V., 2021) Mishra, M.; Sushama, S.; Pandey, S.K.; Chakrabarti, S.Radio frequency sputtered ZnO thin films doped with phosphorus (ZnO:P) have been prepared employing spin-on dopant process. In the SOD process, the dopant film has been spin-coated on a silicon substrate and positioned close to the as-deposited undoped ZnO film at high temperature to perform the phosphorus doping. The high-resolution X-ray diffraction measurement reveals that the prepared ZnO:P films are good in crystalline quality which improves further by annealing. It is found that the full-width half-maximum corresponding to (002) peak of SOD processed thin films is much narrower than previously reported ion-implanted thin films, indicating the better crystalline quality of SOD processed phosphorus-doped ZnO thin films. The X-ray photoelectron spectroscopy measurement signifies that the P2O5 decomposes into two phosphorus atoms behaving like an acceptor dopant and five oxygen atoms which may fill in oxygen vacancies at high-temperature annealing. The photoluminescence spectra discover the acceptor bound exciton peak at 3.35 eV and free electron to acceptor level transitions at 3.31 eV. The calculated acceptor binding energy is 127 meV for the phosphorus dopant which works as a shallow acceptor level. It is found that the phosphorus-doped ZnO thin films prepared using the SOD process have much superior structural and optical properties in comparison to previously reported ion-implanted film. This study demonstrates that the SOD process is much superior than the ion-implantation process to produce high-quality ZnO:P thin films for very stable p-type conduction. © 2021 Elsevier B.V.Item Influence of V2O5 addition as a dopant and dispersed content in barium borophosphate glass on structural and optical properties(Elsevier Ltd, 2024) Rashmi, I.; Ingle, A.; Raghuvanshi, V.; Shashikala, H.D.; Nagaraja, H.S.The Barium Borophosphate glass system with molar compositions 40P2O5– 25B2O3-(35-x) BaO-xV2O5 and 40P2O5–25B2O3–35BaO-xV2O5 (x = 0,1,3,5 mol%) was synthesized using melt-quenching method. A comprehensive investigation of the structural and optical properties was conducted to compare the effects of V2O5 as a dopant and as an addition to the glass matrix. The physical parameters were assessed through the measurement of density. The influence of V2O5 introduction on vibrational modes was studied through Fourier-transform infrared (FTIR) and Raman spectroscopy. The UV–visible absorbance analysis unveiled the existence of multiple valence states of vanadium (V3+, V4+ and V5+). The reduction in bandgap was determined through the utilization of a Tauc plot, while the measurement of the refractive index allowed for the assessment of its variation with the composition of V2O5. Photoluminescence spectroscopy (PL) was employed to explore the presence of intrinsic defects within the glass matrix and the impact of V2O5 on the emission spectra. Furthermore, CIE chromaticity coordinates of synthesized samples were observed in both the white and blue regions, suggesting their potential application in display devices. Significantly, V2O5 glass doped with 1 mol% displayed chromaticity, characterized by CIE coordinates x = 0.288 and y = 0.386, closely matching the white region as well as the bandpass filter. The introduction of transition metal oxide dopants into borophosphate glass yielded exceptional emission properties. The ability to modify optical properties makes it more promising for these glass materials, particularly for applications like optical filters and displays. © 2024 Elsevier Ltd and Techna Group S.r.l.Item A comprehensive study uncovering physical, structural, and optical properties of Cu2O and TiO2-reinforced borosilicate glasses as optical filters(Elsevier B.V., 2024) Raghuvanshi, V.; Rashmi, I.; Ingle, A.; Shashikala, H.D.; Nagaraja, H.S.In this study, the integration of transition metal oxides (TMOs), specifically Cu2O and TiO2, into a borosilicate glass matrix (30SiO2–35B2O3–35Na2O–5CaF2-X (TMO)) was investigated for enhanced glass functionality. Glass samples with varying TMO concentrations (X = 0, 1, 2, 3, 4 mol%) were prepared using the melt-quenching technique. X-ray diffraction confirmed the amorphous nature of the synthesized samples, while FTIR analysis showed structural changes, transitioning from trigonal BO3 to BO4 tetrahedra, alongside the formation of non-bridging oxygen species due to TMO integration. UV–Vis spectroscopy demonstrated a red shift in optical absorption profiles, correlating with a reduction in the indirect band gap as TMO content increased. Photoluminescence studies showed distinct behaviors, with Cu2O suppressing emission peaks and TiO2 exhibiting intriguing blue and green emissions, diminishing at higher concentrations. It was attributed that Cu2O had a larger impact on altering the glass network than TiO2. These findings contribute to understanding the properties of Cu2O and TiO2-containing borosilicate glasses, suggesting tailored optical properties for potential applications as bandpass filter and UV blocker. © 2024 Elsevier B.V.Item Influence of low concentrations of vanadium and titanium ions on the structural and optical properties of borophosphate glasses(Elsevier B.V., 2025) Rashmi, I.; Raghuvanshi, V.; Ingle, A.; Shashikala, H.D.; Nagaraja, H.S.A series of P2O5–B2O3–BaO glass system containing various V2O5 and TiO2 content (from 0.25 to 0.75 mol%) were synthesized using the melt-quenching method to examine their structural, EPR, and optical characteristics. EPR analysis confirmed VO2+ hyperfine splitting and the presence of Ti3+ ions in a tetragonally compressed octahedral structure. The local structures of VO2+ and Ti3+ centers were explored through spin Hamiltonian parameters (g??e) and optical transition energies. UV–visible spectroscopy revealed multiple oxidation states of vanadium (V3+, VO2+ and V5+) and titanium (Ti3+, Ti4+), which significantly influenced the optical characteristics. Photoluminescence (PL) studies indicated the presence of oxygen vacancies and intrinsic defects in the glass matrix, with [VO4]3- groups and Ti3+ ions significantly enhancing emission properties. The enhanced luminescence was observed for glasses with 0.75 mol% TiO2 and 0.75 mol% V2O5. Notably, the 0.75 mol% V2O5-doped glass, exhibited CIE chromaticity coordinates (x = 0.26, y = 0.31), closely aligning with standard white light. The tunability of optical properties through transition metal oxide doping highlights the potential of these glasses for advanced photonic applications, including optical filters and display technologies. © 2025 Elsevier B.V.