Faculty Publications

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    Improving the Cu2ZnSn(S,Se)4-Based Photovoltaic Conversion Efficiency by Back-Contact Modification
    (Institute of Electrical and Electronics Engineers Inc., 2021) Sengar, B.S.; Garg, V.; Siddharth, G.; Kumar, A.; Pandey, S.K.; Dubey, M.; Atuchin, V.V.; Kumar, S.; Mukherjee, S.
    Back-contact modification using a 10-nm ZnS layer in CZTSSe-based solar cell can play a crucial role in improving photovoltaic conversion efficiency. An ultrathin layer of ZnS is deposited over Mo-coated soda lime glass substrate before depositing CZTSSe using sputtering. The crystal structure of deposited CZTSSe thin films over ZnS is recognized as (112)-oriented, polycrystalline in nature, and free from the presence of any secondary phases such as Cu2(S,Se) or Zn(S,Se). The bandgap of CZTSSe thin films deposited over ultrathin ZnS is observed to increase from 1.49 (deposited over Mo directly) to 1.58 eV at room temperature, as determined by spectroscopic ellipsometry. In addition, numerical simulation has been performed using SCAPS software. The impact of ZnS layer has been simulated by using the defects in the absorber and at the interface of ZnS/CZTSSe. The simulated results have been validated with experimentally fabricated CZTSSe device. Simulated device with ZnS intermediate layer is observed to give rise to a photovoltaic conversion efficiency of 15.2%. © 1963-2012 IEEE.
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    Innovative structural engineering of sustainable and environment-friendly Cu2ZnSnS4 solar cell for over 20% conversion efficiency
    (John Wiley and Sons Ltd, 2022) Prabhu, S.; Pandey, S.K.; Chakrabarti, S.
    Kesterite Cu2ZnSnS4(CZTS) thin-film technology has been comprehensively investigated over the last decade as a promising candidate in the field of photovoltaic technologies. However, despite numerous strategies to improve the performance, the efficiencies remain stagnant at around 11%. Poorly optimized absorber/buffer interface, non-absorption of higher wavelength photons, and non-ohmic back contact are the primary reasons for the poor performance of the CZTS solar cell. The authors of this paper propose a cadmium-free buffer layer, multiple quantum wells (MQWs) structure, and a back surface field (BSF) layer to overcome these issues, respectively. In this study, the buffer layer, zinc oxysulfide (Zn[O1−xSx]) is considered as an alternative to toxic Cadmium Sulfide (CdS) for better band alignment with the CZTS absorber layer. Cu2ZnSn(SxSe1−x)4 (CZTSSe) is used as a quantum well material in MQWs to increase photon absorption in CZTS solar cells. Tin selenide (SnSe) is used as the BSF layer to reduce the effect of non-ohmic back contact and to improve the open-circuit voltage (Voc) of MQW incorporated CZTS solar cells. Detailed analysis and optimization of the modified structure with higher performance are presented. The simulation results obtained provide imperative guidelines for the fabrication of high-efficiency CZTS solar cells using non-toxic and earth-abundant materials. © 2022 John Wiley & Sons Ltd.
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    Validation of ZnTe as back surface field layer for CdTe solar cells: A combined experimental and theoretical study
    (Elsevier Ltd, 2023) Ray, S.; Tarafder, K.
    An excellent back contact layer is one of the key requirements for thin-film solar cells with a high energy conversion efficiency. For a highly resistive compound such as CdTe thin-film, fabrication of contact with low electrical contact resistance along with a high electron affinity is very difficult. Herein, we have thoroughly investigated the possibility of using ZnTe as a back contact layer for CdTe-based solar cells through combined experimental and first-principle studies. CdTe and ZnTe thin films were deposited on the glass substrate. Detailed structural, morphological, elemental, electrical, and optical properties are investigated through different experimental techniques. Then p-ZnTe/n-CdTe heterojunction was fabricated, and junction properties were studied. Precise electronic band-structures were obtained for CdTe, ZnTe, and CeTe/ZnTe heterojunctions. The interface properties, band edge position, and band alignments were estimated by using the HSE06 hybrid functional method. Detailed theoretical results substantiate our experimental findings. © 2023 Elsevier B.V.