Faculty Publications
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Item Synthesis, structural, optical and electrical (DC) properties of a semiorganic Thiourea Barium Chloride (TBC) single crystal(Elsevier GmbH journals@elsevier.com, 2017) Mahendra, K.; D'Souza, A.; Udayashankar, N.K.In the present study, TBC single crystals were synthesized using solution evaporation method. The structural analysis of TBC crystal was studied using Powder X-ray diffraction. Optical properties of TBC crystals were carried out using UV–vis, FTIR, Raman and photoluminescence (PL) spectra. The crystal shows absorbance maxima at 209 nm and transparent in the visible region 300–900 nm. The various optical constants such as refractive index, reflectance, speed of light, extinction coefficient, electrical susceptibility, dielectric constant, optical and electrical conductivity were evaluated. Thus results revealed that all these optical constants shows a strong dependence on optical absorption coefficient. Using single oscillator model (Wemple ?Didomenico), lattice dielectric constant and the ratio of free charge carrier to their effective mass were evaluated. The PL study of TBC crystals shows two emission peaks (419 nm ?S, 441 nm- Ba) in blue region. The DC resistivity and conductivity of the crystal was investigated in the temperature range 26 °C–115 °C. © 2017 Elsevier GmbHItem Pulsed DC magnetron sputtered titanium nitride thin films for localized heating applications in MEMS devices(Elsevier B.V., 2018) M.a, M.A.; Lakshmi Ganapathi, L.G.; G N V R, V.; Udayashankar, N.K.; Mohan, S.Titanium nitride (TiN) thin films are deposited on Si/SiO2 substratesby using Pulsed DC magnetron sputtering and are characterized for their structural, mechanical and electrical properties for their application as localized heating elements in microsystem devices. The influence of substrate temperature on the properties of TiN films has been investigated. The correlation between the structural orientation with mechanical and electrical properties has been established. The films deposited at a substrate temperature of 300 °C have shown better structural, mechanical and electrical properties. This film has been chosen for the fabrication of microheater and its characterization. A maximum temperature of 250 °C is achieved by applying a power of 2.8 W to the microheater. © 2018 Elsevier B.V.Item Development of titanium nitride thin film microheaters using laser micromachining(Elsevier Ltd, 2022) M.a, M.A.; Lakshmi Ganapathi, K.L.; Ambresh, M.; Nukala, P.; Udayashankar, N.K.; Mohan, S.In this paper, we report the fabrication and characterization of titanium nitride (TiN) thin-film-based microheaters. TiN thin films have been optimized on Si and SiO2 substrates for their optimum electrical resistivities by controlling the process parameters, including argon:nitrogen (Ar:N2) ratio in reactive pulsed DC magnetron sputter (PDCMS) deposition technique. An optical emission spectroscope (OES) was used for monitoring the plasma characteristics at various nitrogen flow rates. The microstructural and surface properties of the TiN films have been investigated and correlated with the electrical properties. It has been observed that the amount of nitrogen flux in the TiN plasma plays an essential role in the microstructural, surface, and electrical properties of the TiN thin films. Micro-heaters have been fabricated with TiN thin films with low electrical resistivity using laser engraving techniques instead of conventional lithographic and micromachining techniques. The TiN microheater has shown excellent performance. A temperature of 406 °C has been achieved by applying an input power of 8 W. This work paves the path for developing scalable and economic TiN microheaters using laser micromachining techniques. © 2021Item Optimizing thermoelectric properties of Bi2Te3 via Sb and Se Co-doping: experimental insights and finite elemental simulations using COMSOL(Springer, 2025) Puthran, S.; Prabhu, A.N.; Kamble, M.; Babu, P.D.; Joshi, S.; Udayashankar, N.K.In this study, we investigated the impact of antimony (Sb) and selenium (Se) co-dopants on the thermoelectric properties of bismuth telluride (Bi2Te3). Our findings reveal that Sb doping significantly enhances the electrical conductivity of the material, increasing it by a factor of 2.83 for (Bi0.98Sb0.02)2Te2.7Se0.3, primarily due to an increase in carrier concentration. The electrical resistivity of pristine Bi2Te3 at 300 K is 2.79 × 10?4 ?·m, which decreases substantially to 0.006 × 10?4 ?·m at 303 K with Sb doping at x = 0.02. Additionally, (Bi0.96Sb0.04)2Te2.7Se0.3 composition achieves the highest power factor of 9.744 × 10?5 W/m·K2 at 300 K, a 3-times improvement over the pristine Bi2Te3 (3.143 × 10?5 W/m·K2). The ZT value of Bi2Te2.7Se0.3 is 3.5 times higher than that of the pristine material at 350 K. COMSOL simulations support the experimental findings, revealing a maximum temperature gradient of 35 °C (hot end: 20 °C, cold end: ? 15 °C) for the (Bi0.98Sb0.02)2Te2.7Se0.3 module with comparable p-type and n-type parameters. The increased temperature gradient in the COMSOL simulation correlates with the improved thermoelectric performance observed experimentally, indicating that co-doping Bi2Te3 with Sb and Se effectively enhances its thermoelectric properties. © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2025.