Faculty Publications
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Item Crystallization kinetics of Sn doped Ge20Te80?xSnx (0 ? x ? 4) chalcogenide glassy alloys(Elsevier Ltd, 2017) Fernandes, B.J.; Naresh, N.; Ramesh, K.; Sridharan, K.; Udayashankar, N.K.Chalcogenide semiconductors have evolved as multifunctional materials due to their fascinating thermal, optical, electrical and mechanical properties. In this report, Ge20Te80?xSnx (0 ? x ? 4) glassy alloys are systematically studied in order to understand the effect of variation of Sn content on the thermal parameters such as glass transition (Tg) onset crystallization (Tc), peak crystallization (Tp), melting temperature (Tm), activation energy of glass transition (Eg), and crystallization (Ec). The values of Eg are calculated from the variation of Tg with the heating rate (?), according to Kissinger and Moynihan model, while the values of Ec are calculated from the variation of Tp with the heating rate (?), according to Kissinger, Takhor, Augis-Bennett and Ozawa model. Thermal stability and glass forming ability (GFA) are discussed for understanding the applicability of the synthesized materials in phase change memory (PCM) applications. Thermal parameters are correlated with the electrical switching studies to get an insight into the phase change mechanism. The results of the calculated thermal parameters reveal that the GFA of the synthesized Ge20Te80?xSnx (0 ? x ? 4) glassy alloys has a synchronous relationship with their thermal properties studied through differential scanning calorimetry, indicating their potential for phase-change memory device applications. © 2017 Elsevier B.V.Item Enhanced structural, optical, thermal, mechanical and electrical properties by a noval approach (nanoparticle doping) on ferroelectric triglycine sulphate single crystal(Springer Verlag service@springer.de, 2019) Mahendra, K.; Kumar, H.K.T.; Udayashankar, N.K.The pristine and AgNP-doped TGS crystals are studied using powder X-ray diffraction, density measurements, solubility studies, UV–Vis analysis, photoluminescence spectroscopic analysis, thermal gravimetric analysis, differential thermal analysis, differential scanning calorimetry, Vicker’s hardness measurements, I–V and impedance measurements. From the XRD studies, TGS crystal formation is confirmed and by further analyzing X-ray diffraction data it is noticed that the incorporation of nanoparticles induce stress in the lattice of TGS crystal, which, in turn, lead to shift in peak positions. Crystal solubility and density values are increased after doping process. From the emission spectrum it is evident that emission intensity increases as the doping concentration increased. The melting point and mechanical hardness of the crystals also showed improvement after AgNP doping. Band gap calculated by Tauc’s relation is found to decrease with increase in doping concentration. Further, electrical studies demonstrated that crystal conductivity is improved as the doping concentration increases. © 2019, Springer-Verlag GmbH Germany, part of Springer Nature.Item Crystallization kinetics of Si20Te80?xBix (0???x???3) chalcogenide glasses(Elsevier Ltd, 2019) Fernandes, B.J.; Ramesh, K.; Udayashankar, N.K.In this report, we investigate the crystallization kinetics of Si20Te80?xBix (0 ? x ? 3) chalcogenide glassy systems using differential scanning calorimetry (DSC) technique. Systematic studies are carried out in order to understand the variation of thermal parameters such as glass transition temperature (Tg), onset crystallization temperature (Tc) and peak crystallization temperature (Tp) as a function of composition. Activation energy for glass transition (Eg) and crystallization (Ec) has been calculated based on the relevant statistical methods. Furthermore, thermal parameters such as change in specific heat (?Cp), fragility index (F), thermal stability (?T)& (S), enthalpy (?Hc), entropy (?S) are deduced to interpret distinct material behaviour as a function of composition. Structural evaluation like thermal devitrification studies elucidate the restricted glass formability of the studied glass system. Conclusively, a relationship has been established between the obtained thermal parameters and electrical switching characteristics. © 2019 Elsevier B.V.Item Observation of electrical threshold switching behavior and thermal crystallization in bulk Se86-xTe14Snx chalcogenide glasses(Elsevier Ltd, 2023) Joshi, S.; Udayashankar, N.K.Selenium-rich chalcogenides have gained popularity as materials for selector devices due to their unique Ovonic Threshold Switching behavior. Bulk Se86-xTe14Snx glassy alloys (0 ≤ x ≤ 6) were prepared through the traditional melt quenching method. The samples with Sn atomic percentage (x) = 3 to 6 are found to exhibit a rapid and reversible transition between a highly resistive and conductive state affected by an electric field. A remarkable decrement in threshold voltage (Vth) from 453 V to 62 V has been observed with increase in the Tin content. Differential scanning calorimetry (DSC) analysis was carried out to understand the variation of Glass transition temperature (Tg), Crystallization temperature (Tc), and other important glass stability parameters and their compositional dependence. Se82Te14Sn4 sample was found to be thermally most stable with Herby's parameter value (HR) of 0.3860 and a maximum number of switching cycles at room temperature. X-Ray diffraction patterns of annealed samples were compared with pristine glass to study the multi-phasic Se–Te–Sn alloy. Further, the threshold voltage (Vth) and the number of threshold switching cycles are found to decrease with an increase in temperature till crystallization on-set temperature (Toc). The temperature-dependent conductivity studies showed an abrupt increase in the conductivity of the samples as the temperature crossed the crystallization onset temperature. © 2023 Elsevier Ltd and Techna Group S.r.l.Item Investigation of Indium doped Se-Te bulk chalcogenide glasses for electrical switching and phase changing applications(Elsevier Ltd, 2024) Joshi, S.; Rodney, J.D.; James, A.; Behera, P.K.; Udayashankar, N.K.Recently, Metal-doped Se-Te chalcogenides have gained a lot of interest due to their unique capacity for electrical switching, which makes them desirable for electronic applications. This study examines the electrical switching characteristics of bulk Se86−xTe14Inx (0 ≤ x ≤ 6) amorphous alloys produced by the conventional melt-mix-quench process. The samples with an Indium atomic percentage between 2 to 6 exhibited a remarkable transition from a highly resistive to a low resistive state when subjected to an electric field with a current of 1 mA, displaying quick and reversible switching behaviour. The threshold voltage (Vth) significantly dropped from 410.6 V to 49.2 V with an increase in Indium concentration. Additionally, above the specific current threshold, these bulk glasses demonstrated memory-type switching, demonstrating their potential for data storage applications. To comprehend the trend of glass forming ability, thermal stability range and Hruby's glass stability parameters, with their compositional dependency, Differential Scanning Calorimetry (DSC) was utilized. The sample Se80Te14In6 emerged to be the fastest phase-changing material, with a memory switching current threshold of Ith = 1.3 mA and a threshold voltage value of 49.2 V. To study the formation of crystallites in Se-Te-In alloy, X-ray diffraction patterns of pristine glass and the annealed sample were examined. Furthermore, temperature-dependent conductivity investigations showed a sharp rise in conductivity once the process crystallization begins (Tx), and also the threshold voltage (Vth) of the samples decreased linearly with rising temperature. Overall, this study provides valuable insights into the electrical switching behaviour and thermal properties of Se-Te-In chalcogenide glasses, enhancing their suitability in electronic devices. © 2024 Elsevier B.V.Item Peculiarities of Electrical Switching and Phase Transition Dynamics in Bismuth-Infused Se-Te Chalcogenide Glasses: From Bulk to Thin Film Devices(American Chemical Society, 2024) Joshi, S.; Rodney, J.D.; Udayashankar, N.K.Herein, the electrical switching behavior of both bulk and thin film forms of Se86-xTe14Bix (0 ≤ x ≤ 4) chalcogenide glasses was investigated. The melt-quench-derived glasses were found to be amorphous, and the switching behavior exhibited a threshold-type response below a certain current limit (Ith) for bismuth (Bi)-doped bulk samples. Interestingly, as current levels surpassed this threshold, a noteworthy change occurred in the switching behavior, converting it into a memory-type response. The threshold voltage (Vth) exhibited a decreasing trend from ∼228 V to ∼36 V with an increasing Bi content, and differential scanning calorimetry (DSC) was utilized to study the phase transition phenomena and thermal stability of the amorphous glasses. These DSC results unequivocally confirmed that the transition from amorphous to crystalline phase occurred readily and at lower temperatures in the Se82Te14Bi4 composition. Furthermore, annealing studies were carried out to gain insight into the phase transformations that occur when the material makes the transition from an amorphous to a crystalline state. Subsequently, the same melt-quench-derived glasses were deposited as a thin film using physical vapor deposition (PVD) into a three-layered Al/Se-Te-Bi/Al device, and the memory switching voltage experienced a remarkable drop to 2.88 V compared to the bulk material. This exploration sheds light on the captivating electrical switching behavior of Se86-xTe14Bix chalcogenide glasses and holds promise for potential applications spanning the realm of emerging electronics and phase change material (PCM) devices. © 2024 American Chemical Society.