Faculty Publications

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Memory type switching behavior of ternary Ge20Te80-xSnx (0 x 4) chalcogenide compounds
(Institute of Physics Publishing michael.roberts@iop.org, 2016) Fernandes, B.J.; Sridharan, K.; Pumlianmunga, P.; Ramesh, K.; Udayashankar, N.K.
Chalcogenide compounds have gained huge research interest recently owing to their capability to transform from an amorphous to a crystalline phase with varying electrical properties. Such materials can be applied in building a new class of memories, such as phase-change memory and programmable metallization cells. Here we report the memory type electrical switching behavior of a ternary chalcogenide compound synthesized by doping Tin (Sn) in a germanium-telluride (Ge20Te80) host matrix, which yielded a composition of Ge20Te80-xSnx (0 x 4). Results indicate a remarkable decrease in the threshold switching voltage (V T) from 140 to 61 V when the Sn concentration was increased stepwise, which is attributed to the domination of the metallicity factor leading to reduced amorphous network connectivity and rigidity. Variation in the threshold switching voltage (V T) was noticed even when the sample thickness and temperature were altered, confirming that the memory switching process is of thermal origin. Investigations using x-ray diffraction (XRD) and scanning electron microscopy (SEM) revealed the formation of a crystalline channel that acts as the conduction path between the two electrodes in the switched region. Structural and morphological studies indicated that Sn metal remained as a micro inclusion in the matrix and hardly contributed to the rigid amorphous network formation in Ge20Te80-xSnx. Memory type electrical switching observed in these ternary chalcogenide compounds synthesized herein can be explored further for the fabrication of phase-change memory devices. © 2016 IOP Publishing Ltd.
Crystallization kinetics of Sn doped Ge20Te80?xSnx (0 ? x ? 4) chalcogenide glassy alloys
(Elsevier Ltd, 2017) Fernandes, B.J.; Naresh, N.; Ramesh, K.; Sridharan, K.; Udayashankar, N.K.
Chalcogenide semiconductors have evolved as multifunctional materials due to their fascinating thermal, optical, electrical and mechanical properties. In this report, Ge20Te80?xSnx (0 ? x ? 4) glassy alloys are systematically studied in order to understand the effect of variation of Sn content on the thermal parameters such as glass transition (Tg) onset crystallization (Tc), peak crystallization (Tp), melting temperature (Tm), activation energy of glass transition (Eg), and crystallization (Ec). The values of Eg are calculated from the variation of Tg with the heating rate (?), according to Kissinger and Moynihan model, while the values of Ec are calculated from the variation of Tp with the heating rate (?), according to Kissinger, Takhor, Augis-Bennett and Ozawa model. Thermal stability and glass forming ability (GFA) are discussed for understanding the applicability of the synthesized materials in phase change memory (PCM) applications. Thermal parameters are correlated with the electrical switching studies to get an insight into the phase change mechanism. The results of the calculated thermal parameters reveal that the GFA of the synthesized Ge20Te80?xSnx (0 ? x ? 4) glassy alloys has a synchronous relationship with their thermal properties studied through differential scanning calorimetry, indicating their potential for phase-change memory device applications. © 2017 Elsevier B.V.
Porous cobalt chalcogenide nanostructures as high performance pseudo-capacitor electrodes
(Elsevier Ltd, 2017) Bhat, K.S.; Shenoy, S.; Nagaraja, H.S.; Sridharan, K.
Electrochemical supercapacitor is an essential technology that is pivotal for the development of reliable energy storage devices. Herein, we report the fabrication of supercapacitor electrodes using nanostructured porous cobalt chalcogenide (CoTe2 and CoSe2) electrodes, anticipating an enhanced performance owing to their higher contact area with electrolyte and large pore volume enabling shorter diffusion paths for ion exchange. In this regard, we synthesized CoTe2 and CoSe2 nanostructures via an anion-exchange-reaction between pre-synthesized Co(OH)2 hexagonal nanosheets and chalcogen (tellurium and selenium) ions under hydrothermal conditions. Structural, morphological and compositional properties of the as-synthesized materials are examined using X-ray diffraction, Raman spectroscopy, scanning electron microscopy, high resolution transmission electron microscopy and energy dispersive X-ray spectroscopy. Pseudo-capacitive properties of CoTe2 and CoSe2 nanostructures as working electrodes are studied through cyclic voltammetry and galvanostatic charge-discharge methods using an electrochemical workstation. CoSe2 electrode delivered a specific capacitance of 951 F g?1 at a scan rate of 5 mV s?1, which surprisingly is almost three times higher in comparison to CoTe2 electrode (360 F g?1). Both CoTe2 and CoSe2 electrodes exhibited good capacitance retention capability for 2500 CV cycles. The superior electrochemical performance of the nanoporous CoSe2 electrode indicate their applicability for high-performance energy storage device applications. © 2017 Elsevier Ltd

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