Faculty Publications

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Author: search.filters.author.Song, H.Subject: search.filters.subject.High electron mobility transistors

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    A 0.15 μm GaN HEMT device to circuit approach towards dual-band ultra-low noise amplifier using defected ground bias technique
    (Elsevier GmbH, 2023) Gupta, M.P.; Kumar, S.; Elizabeth Caroline, B.; Song, H.; Kumar, V.; Gorre, P.
    This work presents a GaN HEMT device to circuit approach towards low noise amplifier (LNA) using defective ground bias (DGB) technique. This is the first MMIC GaN HEMT LNA design to offer dual-band of operation in both L and S-bands to the author's best knowledge. The proposed 0.15-μm GaN HEMT device fabrication achieves a high output power of 20 W using slot radiation phenomenon. The proposed DGB technique consists of gate and drain biasing topologies which achieves a dual-band of operation using microwave approach. The DGB technique is incorporated into GaN HEMT LNA which achieves high input and output power with good stability. To achieve an optimal noise, high I/O power, and almost flat gain at both L and S-bands, the defective ground structure of bias topologies is modeled and optimized. An artificial ground defect is created to offer resonant properties for the DGS of a microstrip line, which utilizes frequency-selective properties to improve the performance of the LNA circuit by suppressing the harmonics and scaling the size. The dedicated LNA shows the benefits of compact size, extremely low noise figure of 0.74/1.6 dB, high output power of 44 dBm and nearly flat gain of 14/11 dB at 1.17/2.49 GHz with the unique methodologies suggested. The compact GaN HEMT LNA could overcome the weak signal strength received by RF receiver for smart rail transport system. © 2023 Elsevier GmbH
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    A new design approach of Rat-Race coupler based compact GaN HEMT power amplifier towards flat high efficiency over broadband
    (Elsevier GmbH, 2024) Gupta, M.P.; Kumar, S.; Naik Jatoth, D.; Gorre, P.; Song, H.
    This paper presents a high efficiency Rat-Race Coupler based compact GaN HEMT power amplifier (PA) design over broadband for high power transmitter in wireless communication. The rat-race coupler integrated PA Compact design is proposed for the first time as per author best knowledge. The design methodology used a higher order two open stubs and a rat-race coupler (RRC) at input/output sections to control harmonics impedances. The RRC is used to enhance the i/o power, and efficiency over broadband, which provides a good insertion loss, and consumes the least power and non-crucial impedance bandwidth for the normalized frequency band of interest. As a proof of concept, a PA is fabricated using a monolithic microwave integrated circuit (MMIC) 0.15 µm gallium nitride high electron mobility transistor (GaN HEMT) process. The measured result shows that the designed PA achieves a flat power added efficiency (PAE) of 65 % − 74 %, output power (Pout) of 44.8 dBm − 46 dBm, and drain efficiency (DE) of 72 % − 85 %, over a record wide frequency of 1.8 GHz − 3.6 GHz, which is the highest one among all reported harmonic tuned PAs. © 2024 Elsevier GmbH