Faculty Publications
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Item An Ultra-low Noise, Highly Compact Implantable 28 nm CMOS Neural Recording Amplifier(Institute of Electronics Engineers of Korea, 2024) Akuri, N.G.; Naik, D.N.; Kumar, S.; Song, H.; Kar, A.An ultra-low noise, Tera-ohm input impedance two-stage front-end neural amplifier (FENA) in the 28 nm CMOS process is presented in this work. As per the author’s best knowledge, the proposed FENA is implemented on a 28 nm CMOS process for the first time. The proposed FENA consists of an operational transconductance amplifier integrated low-pass filter (LPF) technique. This technique effectively removes the noise current density by using the LPF transfer function and FENA circuit to achieve the best performances, such as ultra-low input-referred noise, ultra-high input impedance, and high gain. The proposed mathematical technique is employed to optimize the dimensions of the neural amplifier in the 28 nm lower node, which results in a noise-free biasing current and ultra-low input referred noise of 18 fV/√Hz at 10 KHz. The ultra-low input referred noise of FENA is achieved by reducing the gate-distributed resistance method. The FENA achieves an ultra-high input impedance of 0.2 Tera-ohm, while a splendid measured gain of 60 dB has succeeded. FENA occupies a chip area of 0.0023 mm2, which consumes a lower power consumption of 1 µW under supply voltage of 1.2 V. The FENA is found to be less prone to PVT variations as 1 mHz of high-pass corner frequency towards robust design. The best performance parameters of FENA could be beneficial for deep exploration neural recording in wireless neural monitoring systems. © 2024, Institute of Electronics Engineers of Korea. All rights reserved.Item A 0.5–5 Gb/s Wide Range, 160 fJ/Pulse Fully Integrated 13th-Order CMOS IR-UWB Transmitter for Wireless Capsule Endoscopy Systems(John Wiley and Sons Ltd, 2025) Akuri, N.; Kumar, K.; Kumar, S.; Nikhil, K.S.; Song, H.This paper proposes a novel technique based fully integrated 13th-order derivative CMOS impulse-radio ultrawideband (IR-UWB) transmitter with wide range of adaptive data rates for wireless capsule endoscopy systems (WCE). The proposed IR-UWB transmitter involves BPSK modulator-integrated RF power amplifier (PA) approach for WCE in first time as per author's best knowledge. The CMOS BPSK modulator with resonator technique generates 13th-order Modulated Gaussian pulse without the pulse generator. It has a peak-to-peak value of 25 mV and PSD level of ?72.60 dBm/MHz, data rate variability from 500 Mbps to 5 Gbps. The BPSK modulator with resonator is designed by time constant analysis in first time. In addition, a proposed CMOS PA is designed using four stacked transistors, which achieves a high output power as well as high efficiency for entire frequency band of operation from 3 to 16 GHz and wide impedance matching. The PA achieved an excellent gain of 16.55 dB with gain ripple of 0.25 dB only. Moreover, the PA achieved the saturated output power of 18.2 to 19.3 dBm with OP1dB of 15.96 to 16.72 dBm across entire bandwidth. Without violating FCC guidelines, PA strengths both peak-to-peak values, and PSD level of BPSK modulated signal to 80 mV and ?46.42 dBm/MHz. An IR-UWB transmitter has been implemented and fabricated using 65-nm CMOS Process, which consumes of only 160 fJ/pulse for generating Gaussian pulses order ranging from third-order to more than 13th-order at various data rates. © 2025 John Wiley & Sons Ltd.