Faculty Publications
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Item High Thermoelectric Performance of Co-Doped Tin Telluride Due to Synergistic Effect of Magnesium and Indium(American Chemical Society service@acs.org, 2017) Bhat, D.K.; Shenoy, U.S.Thermoelectric (TE) materials are considered go-to materials lately in addressing the worldwide energy crisis. We report a study on the effect of co-doping of magnesium and indium in lead-free SnTe both experimentally and theoretically. We show how the resonant levels introduced by indium increase the Seebeck coefficient at lower temperatures and how magnesium enhances the Seebeck at higher temperatures by opening the band gap and decreasing the energy difference between the light and heavy hole valence sub-bands. Synergistically, the effects of band engineering lead to the co-doped sample having high thermoelectric figure of merit (ZT) over a wide range of temperature and record a high power factor of ?42 ?W cm-1 K-2 for SnTe based materials. For the very first time we show the effect of site occupied by the dopant on the electronic structure of the material. The resulting high ZT of 1.5 at 840 K makes SnTe a very suitable material for thermoelectric applications. (Graph Presented). © 2017 American Chemical Society.Item Enhanced Bulk Thermoelectric Performance of Pb0.6Sn0.4Te: Effect of Magnesium Doping(American Chemical Society service@acs.org, 2017) Shenoy, U.S.; Bhat, D.K.Thermoelectric (TE) materials are promising in the context of renewable power generation as they can directly convert waste heat into electricity. Although PbTe is the best known TE material, its use is not encouraged due to concerns of environmental toxicity of lead. A combination of modified self-propagating high-temperature synthesis (SHS) and field-assisted sintering technique (FAST) is employed for the very first time to synthesize a solid solution of PbTe and SnTe. We show that doping of Pb0.6Sn0.4Te with Mg breaks crystal mirror symmetry and opens up band gap. This results in suppression of bipolar diffusion. Also the increase in degeneracy of valence sub-bands improves Seebeck coefficient. Both these synergistically leads to remarkable enhancement in figure of merit ZT (?2 at 840 K) and ZTavg (?1.2 between 500 and 840 K) rendering it into high-performance thermoelectric material by successfully engineering electronic structure. Most importantly, the ZT here is comparable to that of Mg-doped PbTe but has lesser lead content and hence is more environment friendly. The most probable configuration of Pb0.6Sn0.4Te was also determined for the very first time using site occupancy disorder (SOD) technique. © 2017 American Chemical Society.Item Enhanced thermoelectric properties of vanadium doped SrTiO3: A resonant dopant approach(Elsevier Ltd, 2020) Shenoy, U.S.; Bhat, D.K.Development of eco-friendly thermoelectric (TE) materials to tackle global energy crisis has become the need of the day. The goal is to either improve the properties of the existing materials or to look for new materials with better TE properties which are also nontoxic, abundant and stable. SrTiO3, a perovskite material has been gaining interest recently due to its unique and tunable electronic and crystal structure. Herein, we systematically study the effect of site occupancy of vanadium doping in SrTiO3 on the electronic structure and TE properties. First principles calculations reveal that doping of V in Sr lattice site introduces resonance levels and thereby causes distortion in density of states near the Fermi level. Transport property calculations predict V doped SrTiO3 to be a potential TE material. The study is a first report on introduction of resonance states by V in Sr site in SrTiO3 and provides new insights into the doping strategy in improving the TE properties of SrTiO3. © 2020 Elsevier B.V.Item Vanadium-doped BaTiO3 as high performance thermoelectric material: role of electronic structure engineering(Elsevier Ltd, 2020) Shenoy, U.S.; Bhat, D.K.It is well known that thermoelectric (TE) materials are the most sought-after ones to mitigate energy crisis. Development of an efficient non-toxic, economic, abundant, and stable TE material is quite difficult due to its complicated traits. BaTiO3, a perovskite material shows a tremendous potential as a TE material due to its highly tunable electronic structure. Herein, for the first time we report use of dopant to improve the Seebeck coefficient of BaTiO3. We used first-principles density functional theory calculations to study the effect of vanadium doping in BaTiO3, and for the first time, we report that V acts as a resonant dopant in BaTiO3. The study on effect of site occupancy reveals that V in Ba site distorts the density of states below the conduction band by introducing resonance level at the Fermi level. The transport property calculations based on Boltzmann's relation predicts V-doped BaTiO3 to be a potential TE material. The results also provide new insights into development of BaTiO3 as a multifunctional material. © 2020 Elsevier LtdItem Electronic structure modulation of Pb0.6Sn0.4Te via zinc doping and its effect on the thermoelectric properties(Elsevier Ltd, 2021) Shenoy, U.S.; Bhat, D.K.Striking a balance between the high performance and detrimental environmental toxicity of PbTe materials in thermoelectrics (TE) has become a necessity in the current situation. In this context, improving the performance of materials with lower lead content to the level of PbTe is crucial. Herein, we engineer the electronic structure of Pb0.6Sn0.4Te, a well-known TCI but a poor TE material by doping Zn. The first principles calculation reveal that Zn doping introduces multiple electronic valleys while simultaneously opening the band gap of Pb0.6Sn0.4Te. Higher power factor with lower thermal conductivity is predicted by the transport property calculations in the doped material. The resonance level introduced along with features of hyper-convergence of the valence bands leads to improved Seebeck co-efficient throughout the studied temperature range. An experimental figure of merit, ZT of ~1.57 at 840 K promises us a TE material applicable for a broad temperature range for future energy applications. © 2021 Elsevier B.V.Item Ultralow Lattice Thermal Conductivity and Enhanced Mechanical Properties of Cu and Sb Co-Doped SnTe Thermoelectric Material with a Complex Microstructure Evolution(American Chemical Society, 2022) Kihoi, S.K.; Shenoy, U.S.; Kahiu, J.N.; Kim, H.; Bhat, D.K.; Lee, H.S.SnTe is an exceptionally promising eco-friendly thermoelectric material that continues to draw immense interest as a source of alternative energy recovered from waste heat energy. Here, we investigate the effect of introducing Cu as a single doping element rather than phase separated in SnTe followed by Sb co-doping to tune the lattice thermal conductivity. A microstructure evolution was observed which influences the thermoelectric performance of these SnTe-based materials. An overall power factor of ∼22 μW/cmK2 and an ultralow lattice thermal conductivity of 0.39 W/mK are reported. A maximum ZT of 0.86 is also reported with an all-time record high hardness value of 165 Hv among SnTe-based thermoelectric materials. Through DFT calculations, we show that Cu opens the band gap of SnTe, whereas Sb in the presence of Cu introduces resonance levels and causes band convergence. This kind of enhanced thermoelectric performance is paramount for the application of SnTe in recovery of heat into useful electrical energy. © 2022 American Chemical SocietyItem Optimized electronic performance in half-Heusler Ti-doped NbFeSb materials by stoichiometric tuning at the Fe and Sb sites(Elsevier Ltd, 2022) Kahiu, J.N.; Shenoy, U.S.; Kihoi, S.K.; Kim, H.; Yi, S.; Bhat, D.K.; Lee, H.S.Electronic structure is known to be highly influenced by the site occupancy and the stoichiometry of the material which in turn largely effects the thermoelectric properties. Herein, we present electronic calculations using density functional theory (DFT) of non-stoichiometric Ti doped NbFeSb configuration, showing the effect of the anti-site Fe atoms on the electronic properties, and supporting them with experimental results of the prepared Nb0.8Ti0.2Fe1+xSb1−x samples. The electronic structure of the non-stoichiometric sample shows the introduction of two distinct peaks near the Fermi level by the Fe atoms at the Sb sites. These resonance states are known to cause an increase in the density of states effective mass near the Fermi level, which explains the increase in the Seebeck coefficient in the sample x = 0.03 compared to the sample x = 0.00. In addition, a comparatively higher electrical conductivity is reported from sample x = 0.03, which is attributed to the aliovalent substitution of Sb atoms by Fe atoms. The simultaneous increase in the Seebeck coefficient and electrical conductivity culminates in an increased power factor of ∼50.3 µW/cmK2 at 373 K, which is ∼46% higher than that of samples x = 0.00 and x = 0.05, highlighting the possibility of increasing the power density by stoichiometric variation to achieve the high joule-per-dollar performance of NbFeSb-based TE devices, the relevance of which is also currently emphasized in the quest for commercial viability. © 2021 Elsevier B.V.Item Selective co-doping improves the thermoelectric performance of SnTe: An outcome of electronic structure engineering(Elsevier Ltd, 2022) Shenoy, U.S.; Bhat, D.K.Thermoelectric materials which exhibit high performance throughout a range of temperature is required for successful scavenging of waste heat to generate electricity. Herein, we tailor the electronic structure of SnTe by co-doping Zn with three elements namely Ag, Ca and Mg. We observe that the dopants play complementary roles and improve the thermoelectric performance throughout the studied temperature range. Zn introduces resonance level and causes hyper-convergence to increase the Seebeck at low temperatures while M (M = Ag, Ca, Mg) enlarges the band gap preventing bipolar transport and also helps in the band convergence improving the performance at higher temperatures. The enhanced thermoelectric properties predicted by theoretical calculations is supported by experimental results. For the same concentration of doping, AgZn co-doped SnTe exhibits higher performance compared to the other two with an impressive ZT of ~1.54 at 840 K and average ZT of ~0.97 between 500 K and 840 K. © 2021 Elsevier B.V.Item Resonance states and hyperconvergence induced by tungsten doping in SnTe: Multiband transport leading to a propitious thermoelectric material(Elsevier Ltd, 2022) Shenoy, U.S.; D, G.K.; Bhat, D.K.Discovery of dopants which can engineer the electronic structure of the thermoelectric materials beneficially to improve the figure of merit has been receiving a lot of attention. In this work, we study one such unique dopant, tungsten in SnTe by implementing first principles density functional theory approach. We predict that tungsten is a n-type resonant dopant which not only increases the band gap but causes convergence of valence sub-bands leading to increased Seebeck co-efficient due to increase in the effective mass and decrease in the bipolar conduction. We show for the first time, the introduction of hyperconvergence in the conduction sub-bands, a feature which was observed only in valence bands of SnTe and GeTe. In addition to the above features, it also introduces multiple electronic valleys near the Fermi level excluding the use of a co-dopant to exploit the benefits of the electronic structure engineering. A maximum ZT of ~1.61 theoretically achieved by tuning the chemical potential at 800 K makes this material worth being explored experimentally. © 2022 Elsevier B.V.Item Pushing the limit of synergy in SnTe-based thermoelectric materials leading to an ultra-low lattice thermal conductivity and enhanced ZT(Royal Society of Chemistry, 2023) Kihoi, S.K.; Shenoy, U.S.; Kahiu, J.N.; Kim, H.; Bhat, D.K.; Lee, H.S.In the era of sustainable and environmentally friendly energy requirements, alternative sources of energy continue to be fervently sought after. Heat recovery into useful electrical energy from waste heat offers a readily available source of energy with humongous potential. Herein, a non-toxic thermoelectric material, SnTe, is explored. Promising thermoelectric performance is also communicated. Introducing Ge as a single dopant is shown for the first time in SnTe-based materials to introduce amorphous Ge (a-Ge) precipitates into the matrix. These act as an auxiliary contributor to the observed ultra-low lattice thermal conductivity of ∼0.33 W m−1 K−1 at 823 K, which is below the reported amorphous limit of SnTe. Bi, which is a known resonant dopant, was further co-doped to fine-tune the electrical properties where a high power factor of ∼25.7 μW cm−1 K−2 is reported. To push the limit of synergy, Sb was added raising the maximum figure of merit ZT to a value of ∼1.1 at 873 K. With co-doping, dual resonance levels are shown which distorts the density of states (DOS) contributing to an increased band effective mass. In conjunction with the introduction of an amorphous phase, co-doping is ascertained as a practical means for the synthesis of high-performance thermoelectric materials for effective waste-heat recovery applications. © 2023 The Royal Society of Chemistry