Faculty Publications
Permanent URI for this communityhttps://idr.nitk.ac.in/handle/123456789/18736
Publications by NITK Faculty
Browse
11 results
Search Results
Item Zn: a versatile resonant dopant for SnTe thermoelectrics(Elsevier Ltd, 2019) Bhat, D.K.; Shenoy, U.S.SnTe-based materials have been receiving increasing heed in the field of thermoelectrics (TEs) because of their tunable electronic structure. Until now, only In and Bi are reported to introduce resonance level in SnTe. In this work, for the very first time, we report Zn as a resonant dopant in SnTe using first-principles density functional theory calculations. We show that the resonant states introduced by Zn raises the heavy hole valence sub-band above light hole valence sub-band leading to both record high room temperature Seebeck coefficient (~127 ?VK?1 at 300 K) and figure of merit, ZT (~0.28 at 300 K) for SnTe-based materials. The transport properties calculated using Boltzmann transport equations predicts Zn-doped SnTe to be a promising TE material, further confirmed by experimental ZTmaximum of ~1.49 at 840 K and ZTaverage of ~0.78 with 300 K and 840 K as cold and hot ends, respectively. © 2019 Elsevier LtdItem Bi and Zn co-doped SnTe thermoelectrics: Interplay of resonance levels and heavy hole band dominance leading to enhanced performance and a record high room temperature: ZT(Royal Society of Chemistry, 2020) Shenoy, U.S.; Bhat, D.K.Lead free SnTe with a tunable electronic structure has become the front runner in eco-friendly thermoelectrics. Herein, we show through first-principles density functional theory calculations that Bi and Zn doping introduces a resonance level in SnTe. The dominance of the heavy hole valence band at room temperature in Bi-Zn co-doped SnTe leads to a record high room temperature ZT of ?0.3 (at 300 K) for SnTe based materials. The increase in the Seebeck coefficient value due to the interaction between the resonance states and formation of the nanoprecipitates leading to an appreciably low lattice thermal conductivity of 0.68 W m-1 K-1 results in a peak ZT of ?1.6 at 840 K. A record high ZTaverage of ?0.86 with 300 K and 840 K as cold and hot ends, respectively, makes Bi-Zn co-doped SnTe a potential material for thermoelectric applications. This strategy of using two resonant dopants, to not only improve the room temperature ZT but also high temperature values, can very well be extended to other systems. This journal is © The Royal Society of Chemistry.Item Enhanced thermoelectric properties of vanadium doped SrTiO3: A resonant dopant approach(Elsevier Ltd, 2020) Shenoy, U.S.; Bhat, D.K.Development of eco-friendly thermoelectric (TE) materials to tackle global energy crisis has become the need of the day. The goal is to either improve the properties of the existing materials or to look for new materials with better TE properties which are also nontoxic, abundant and stable. SrTiO3, a perovskite material has been gaining interest recently due to its unique and tunable electronic and crystal structure. Herein, we systematically study the effect of site occupancy of vanadium doping in SrTiO3 on the electronic structure and TE properties. First principles calculations reveal that doping of V in Sr lattice site introduces resonance levels and thereby causes distortion in density of states near the Fermi level. Transport property calculations predict V doped SrTiO3 to be a potential TE material. The study is a first report on introduction of resonance states by V in Sr site in SrTiO3 and provides new insights into the doping strategy in improving the TE properties of SrTiO3. © 2020 Elsevier B.V.Item SnTe thermoelectrics: Dual step approach for enhanced performance(Elsevier Ltd, 2020) Bhat, D.K.; Shenoy, U.S.Doping of SnTe to achieve desirable properties has been a wide spread approach in the recent past to enhance its thermoelectric performance. Herein, we apply a dual approach: Pb doping for reduction of thermal conductivity and Zn doping for improving the power factor. The theoretical prediction of enhanced Seebeck due to increase in the band gap, introduction of the resonance levels by Zn and dominance of the heavy hole valence band, is realized experimentally as improved power factor throughout the temperature range. The accompanying reduction in the thermal conductivity by co-doping Pb and Zn leads to a record high room temperature figure of merit, ZT of 0.35 (@ 300K) and ZT of 1.66 at 840 K. The ZTaverage of ?0.9 with 300 K as cold end and 840 K as hot end sets a new record for SnTe based materials. © 2020 Elsevier B.V.Item Resonance levels in GeTe thermoelectrics: Zinc as a new multifaceted dopant(Royal Society of Chemistry, 2020) Bhat, D.K.; Shenoy, U.S.Recently doping has been widely used in enhancing the thermoelectric properties of lead-free GeTe. But much of the work has been concentrated on carrier concentration tuning or phonon scattering. Until now, only indium has been reported to be the best resonant dopant in cubic GeTe. Herein, for the first time we introduce zinc as a resonant dopant to the cubic GeTe family. We show that zinc in GeTe not only introduces resonance states but also increases the band gap and raises the heavy hole valence band above the light hole valence band leading to enhanced Seebeck values. This multifunctional dopant incorporation in GeTe leads to enhanced transport properties as predicted by Boltzmann transport properties calculations based on first principles density functional theory electronic structure calculations. This journal is © The Royal Society of Chemistry and the Centre National de la Recherche Scientifique.Item Vanadium-doped BaTiO3 as high performance thermoelectric material: role of electronic structure engineering(Elsevier Ltd, 2020) Shenoy, U.S.; Bhat, D.K.It is well known that thermoelectric (TE) materials are the most sought-after ones to mitigate energy crisis. Development of an efficient non-toxic, economic, abundant, and stable TE material is quite difficult due to its complicated traits. BaTiO3, a perovskite material shows a tremendous potential as a TE material due to its highly tunable electronic structure. Herein, for the first time we report use of dopant to improve the Seebeck coefficient of BaTiO3. We used first-principles density functional theory calculations to study the effect of vanadium doping in BaTiO3, and for the first time, we report that V acts as a resonant dopant in BaTiO3. The study on effect of site occupancy reveals that V in Ba site distorts the density of states below the conduction band by introducing resonance level at the Fermi level. The transport property calculations based on Boltzmann's relation predicts V-doped BaTiO3 to be a potential TE material. The results also provide new insights into development of BaTiO3 as a multifunctional material. © 2020 Elsevier LtdItem Electronic structure modulation of Pb0.6Sn0.4Te via zinc doping and its effect on the thermoelectric properties(Elsevier Ltd, 2021) Shenoy, U.S.; Bhat, D.K.Striking a balance between the high performance and detrimental environmental toxicity of PbTe materials in thermoelectrics (TE) has become a necessity in the current situation. In this context, improving the performance of materials with lower lead content to the level of PbTe is crucial. Herein, we engineer the electronic structure of Pb0.6Sn0.4Te, a well-known TCI but a poor TE material by doping Zn. The first principles calculation reveal that Zn doping introduces multiple electronic valleys while simultaneously opening the band gap of Pb0.6Sn0.4Te. Higher power factor with lower thermal conductivity is predicted by the transport property calculations in the doped material. The resonance level introduced along with features of hyper-convergence of the valence bands leads to improved Seebeck co-efficient throughout the studied temperature range. An experimental figure of merit, ZT of ~1.57 at 840 K promises us a TE material applicable for a broad temperature range for future energy applications. © 2021 Elsevier B.V.Item Vanadium: A Protean Dopant in SnTe for Augmenting Its Thermoelectric Performance(American Chemical Society, 2021) Shenoy, U.S.; Bhat, D.K.In this work, a second n-type resonant dopant in the form of vanadium is introduced in the SnTe thermoelectrics family. The electronic structure simulated using density functional theory calculations revealed that V not only opens the band gap but also causes convergence of both valence and conduction sub-bands. Apart from introducing the resonance levels at the Fermi energy, the unique trait exhibited is the Rashba splitting of the conduction band to introduce multiple valleys. The advantage is the proximity of these features to the Fermi level, which eliminates the need for a co-dopant to harness the benefits. The Boltzmann transport calculations predicted promising transport properties, which showed the dual nature of vanadium, being capable of acting as a p-type as well as an n-type dopant in SnTe with corresponding maximum ZT values of 1.66 and 1.31, respectively, at 800 K, thus making it a highly potential high-performance thermoelectric candidate for future experimental studies. © 2021 American Chemical SocietyItem Resonance states and hyperconvergence induced by tungsten doping in SnTe: Multiband transport leading to a propitious thermoelectric material(Elsevier Ltd, 2022) Shenoy, U.S.; D, G.K.; Bhat, D.K.Discovery of dopants which can engineer the electronic structure of the thermoelectric materials beneficially to improve the figure of merit has been receiving a lot of attention. In this work, we study one such unique dopant, tungsten in SnTe by implementing first principles density functional theory approach. We predict that tungsten is a n-type resonant dopant which not only increases the band gap but causes convergence of valence sub-bands leading to increased Seebeck co-efficient due to increase in the effective mass and decrease in the bipolar conduction. We show for the first time, the introduction of hyperconvergence in the conduction sub-bands, a feature which was observed only in valence bands of SnTe and GeTe. In addition to the above features, it also introduces multiple electronic valleys near the Fermi level excluding the use of a co-dopant to exploit the benefits of the electronic structure engineering. A maximum ZT of ~1.61 theoretically achieved by tuning the chemical potential at 800 K makes this material worth being explored experimentally. © 2022 Elsevier B.V.Item A case of perfect convergence of light and heavy hole valence bands in SnTe: the role of Ge and Zn co-dopants(Royal Society of Chemistry, 2022) Shenoy, U.S.; D, G.K.; Bhat, D.K.A dual step approach of decreasing the thermal conductivity and improving the power factor by using two different dopants has shown great promise in the development of high performance thermoelectrics. In this work, we dope Ge, which is well known to decrease the thermal conductivity of SnTe. Later, to this, we co-dope Zn to simultaneously improve the power factor. Zn, in the presence of Ge, introduces resonance levels, thus distorting the density of states near the Fermi level, improving the room temperature performance. In addition, it is also able to increase the band gap, thus preventing bipolar diffusion at high temperatures. The unique feature exhibited is the perfect convergence of light and heavy hole valence sub-bands achieved for the first time in SnTe promising a high performance throughout the temperature range. The transport property calculations reveal that in addition to p-type, it can also act as an outstanding n-type material by tuning its chemical potential, making it worth studying experimentally. © 2022 RSC.