Faculty Publications
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Item Receiver architectures for 5g: Current status and future prospects(Springer Science and Business Media Deutschland GmbH, 2021) Kumar, A.; Sengar, B.S.; Chaudhary, S.; Pandey, S.K.; Pandey, S.K.; Hasan Raza Ansari, M.; Aaryashree, A.In this chapter, the recent progress in receiver architecture and various aspects of the available receiver architectures have been discussed. Besides, an overview of the systematic classification of architecture has been analyzed. Documentation of new possibilities and system-level trade has been closely inspected. Certainly, there is a requirement of low-power, flexible, and high-performance receiver architecture for the successful implementation of the 5G network. Different works in this regard have been considered as examples for discussing the status and prospects of architectures with respect to 5G future. Various architectures considered in this chapter can be very valuable to design 5G network in future and will expose the research community with new possibilties to explore for further improvements. © Springer Nature Singapore Pte Ltd. 2021.Item Improving the Cu2ZnSn(S,Se)4-Based Photovoltaic Conversion Efficiency by Back-Contact Modification(Institute of Electrical and Electronics Engineers Inc., 2021) Sengar, B.S.; Garg, V.; Siddharth, G.; Kumar, A.; Pandey, S.K.; Dubey, M.; Atuchin, V.V.; Kumar, S.; Mukherjee, S.Back-contact modification using a 10-nm ZnS layer in CZTSSe-based solar cell can play a crucial role in improving photovoltaic conversion efficiency. An ultrathin layer of ZnS is deposited over Mo-coated soda lime glass substrate before depositing CZTSSe using sputtering. The crystal structure of deposited CZTSSe thin films over ZnS is recognized as (112)-oriented, polycrystalline in nature, and free from the presence of any secondary phases such as Cu2(S,Se) or Zn(S,Se). The bandgap of CZTSSe thin films deposited over ultrathin ZnS is observed to increase from 1.49 (deposited over Mo directly) to 1.58 eV at room temperature, as determined by spectroscopic ellipsometry. In addition, numerical simulation has been performed using SCAPS software. The impact of ZnS layer has been simulated by using the defects in the absorber and at the interface of ZnS/CZTSSe. The simulated results have been validated with experimentally fabricated CZTSSe device. Simulated device with ZnS intermediate layer is observed to give rise to a photovoltaic conversion efficiency of 15.2%. © 1963-2012 IEEE.Item Unveiling the Potential of Bismuth Oxy-Iodide (BiOI)-Based Photovoltaic Device for Indoor Light Harvesting(Institute of Electrical and Electronics Engineers Inc., 2023) Manjhi, S.; Siddharth, G.; Pandey, S.K.; Sengar, B.S.; Dwivedi, P.; Garg, V.Indoor photovoltaics (IPVs) have piqued the interest of many because of their potential to power small and portable electronics and photonic devices. This work investigates one of the exemplary perovskite inspired materials (PIMs), bismuth oxy-iodide (BiOI). In order to explore the potential of BiOI in the indoor environment, the baseline model of BiOI device [indium tin oxide (ITO)/NiOx/BiOI/ZnO/Contact] is developed using the experimental results of a recent study with a power conversion efficiency (PCE) of 4%. The performance of the proposed device is fine-tuned by investigating the effect of: 1) absorber thickness and defect density and 2) valence band offset (VBO) between the hole transport layer (HTL) and absorber interface (NiOx/BiOI) along with the interface defect density. Furthermore, the series and shunt resistance of the device is optimized. Additionally, the performance of the optimized device is investigated under different WLED light intensities. Finally, after optimizing the device under WLED illumination, the best performance parameters achieved are Jsc : 1.83 mA/cm2, Voc : 1.33 V, FF: 85.91%, and PCE: 40%. Moreover, the optimized device performance under different indoor light sources: WLED, halogen, and compact fluorescent lamps (CFLs), has been performed to estimate the performance under widely utilized lighting sources. © 1963-2012 IEEE.Item Unveiling the Potential of Cs3Sb2ClxI9-x-Based Solar Cells for Efficient Indoor Light Harvesting: Numerical Simulation(John Wiley and Sons Inc, 2024) Manjhi, S.; Siddharth, G.; Pandey, S.K.; Sengar, B.S.; Garg, V.Lead-free Perovskite-inspired materials (PIM) have become the most promising candidate for indoor photovoltaics (IPV) because of their low toxicity and high performance. In this study, the potential of one of the lead-free PIMs, Cesium antimony chloride iodide (Cs3Sb2ClxI9-x), is explored for IPV devices. Recent experimental research work on a Cs3Sb2ClxI9-x− based solar cell with a power conversion efficiency (PCE) of 3.7% is considered for the baseline model development. The device performance is further optimized by investigating 1) absorber thickness and defect density, 2) band alignment of Electron Transport Layer (ETL)/Absorber, ETL Doping concentration and absorber/ETL interface defect density, 3) band alignment of Hole Transport Layer (HTL)/Absorber, HTL Doping concentration, and absorber/HTL interface defect density, 4) work function of metal contacts, 5) series and shunt resistances. After device optimization, the simulated device under 1000 lux WLED is able to achieve Jsc, Voc, FF, and PCE of 1.8 mA cm−2, 1.46 V, 89.3%, and 45.05%, respectively. Further, an evaluation of the performance of the optimized device under various indoor light sources, including White Light Emitting Diode (WLED), halogen, and Compact Fluorescent Lamp (CFL), is conducted in order to assess its performance under widely utilized lighting conditions. © 2024 Wiley-VCH GmbH.Item Insights into the potential of Sb alloyed Cu2AgBiI6-based solar cells: For efficient indoor energy-harvesting(Elsevier Ltd, 2025) Kumar, A.; Siddharth, G.; Dwivedi, P.; Pandey, S.K.; Sengar, B.S.; Garg, V.Recently, indoor photovoltaics have attracted significant attention due to their remarkable capability to generate power from indoor light sources. This work investigates the performance of perovskite-inspired material Sb alloyed Cu2AgBiI6 (CABI-Sb) based indoor photovoltaic device, which has shown a power conversion efficiency of 9.53 %, reported in a recent experimental study by B. Al-Anesi et al. The baseline model of the CABI-Sb device structure (FTO/TiO2/CABI-Sb/Spiro-OMeTAD/Au) is developed in SCAPS-1D using the earlier reported experimental data. Baseline model parameters under WLED illumination are Jsc: 128.2 µA/cm2, Voc: 0.51 V, FF: 66.57 %, and PCE: 9.53 %, with a minor deviation of less than 1 %, which validates the developed model with experimental data. The performance of the device is fine-tuned by optimizing 1) Absorber thickness and defect density 2) Electron Transport Layer (ETL) doping density, conduction band offset (CBO) and interface defect density between the ETL/absorber (TiO2 /CABI-Sb) interface, 3) Hole Transport Layer (HTL) doping density, valence band offset (VBO) and interface defect density between HTL/absorber (CABI-Sb/Spiro-OMeTAD) interface, 4) work function of contacts, and 5) Series and shunt resistance were optimized. The performance parameters of the optimized device under the WLED illumination are Jsc: 1.84 mA/cm2, Voc: 1.60 V, FF: 86.78 %, and PCE: 49.31 %. A remarkable improvement in PCE is achieved from 9.53 % to 49.31 %. Further, to validate the suitability of the optimized device under different indoor environments, optimized device performance is evaluated under different lux intensities of WLED (6500 K), WLED (2700 K), compact fluorescent light (CFL), and halogen. © 2024 International Solar Energy Society