Faculty Publications
Permanent URI for this communityhttps://idr.nitk.ac.in/handle/123456789/18736
Publications by NITK Faculty
Browse
3 results
Search Results
Item Improving the Cu2ZnSn(S,Se)4-Based Photovoltaic Conversion Efficiency by Back-Contact Modification(Institute of Electrical and Electronics Engineers Inc., 2021) Sengar, B.S.; Garg, V.; Siddharth, G.; Kumar, A.; Pandey, S.K.; Dubey, M.; Atuchin, V.V.; Kumar, S.; Mukherjee, S.Back-contact modification using a 10-nm ZnS layer in CZTSSe-based solar cell can play a crucial role in improving photovoltaic conversion efficiency. An ultrathin layer of ZnS is deposited over Mo-coated soda lime glass substrate before depositing CZTSSe using sputtering. The crystal structure of deposited CZTSSe thin films over ZnS is recognized as (112)-oriented, polycrystalline in nature, and free from the presence of any secondary phases such as Cu2(S,Se) or Zn(S,Se). The bandgap of CZTSSe thin films deposited over ultrathin ZnS is observed to increase from 1.49 (deposited over Mo directly) to 1.58 eV at room temperature, as determined by spectroscopic ellipsometry. In addition, numerical simulation has been performed using SCAPS software. The impact of ZnS layer has been simulated by using the defects in the absorber and at the interface of ZnS/CZTSSe. The simulated results have been validated with experimentally fabricated CZTSSe device. Simulated device with ZnS intermediate layer is observed to give rise to a photovoltaic conversion efficiency of 15.2%. © 1963-2012 IEEE.Item Unveiling the Potential of Bismuth Oxy-Iodide (BiOI)-Based Photovoltaic Device for Indoor Light Harvesting(Institute of Electrical and Electronics Engineers Inc., 2023) Manjhi, S.; Siddharth, G.; Pandey, S.K.; Sengar, B.S.; Dwivedi, P.; Garg, V.Indoor photovoltaics (IPVs) have piqued the interest of many because of their potential to power small and portable electronics and photonic devices. This work investigates one of the exemplary perovskite inspired materials (PIMs), bismuth oxy-iodide (BiOI). In order to explore the potential of BiOI in the indoor environment, the baseline model of BiOI device [indium tin oxide (ITO)/NiOx/BiOI/ZnO/Contact] is developed using the experimental results of a recent study with a power conversion efficiency (PCE) of 4%. The performance of the proposed device is fine-tuned by investigating the effect of: 1) absorber thickness and defect density and 2) valence band offset (VBO) between the hole transport layer (HTL) and absorber interface (NiOx/BiOI) along with the interface defect density. Furthermore, the series and shunt resistance of the device is optimized. Additionally, the performance of the optimized device is investigated under different WLED light intensities. Finally, after optimizing the device under WLED illumination, the best performance parameters achieved are Jsc : 1.83 mA/cm2, Voc : 1.33 V, FF: 85.91%, and PCE: 40%. Moreover, the optimized device performance under different indoor light sources: WLED, halogen, and compact fluorescent lamps (CFLs), has been performed to estimate the performance under widely utilized lighting sources. © 1963-2012 IEEE.Item Unveiling the Potential of Cs3Sb2ClxI9-x-Based Solar Cells for Efficient Indoor Light Harvesting: Numerical Simulation(John Wiley and Sons Inc, 2024) Manjhi, S.; Siddharth, G.; Pandey, S.K.; Sengar, B.S.; Garg, V.Lead-free Perovskite-inspired materials (PIM) have become the most promising candidate for indoor photovoltaics (IPV) because of their low toxicity and high performance. In this study, the potential of one of the lead-free PIMs, Cesium antimony chloride iodide (Cs3Sb2ClxI9-x), is explored for IPV devices. Recent experimental research work on a Cs3Sb2ClxI9-x− based solar cell with a power conversion efficiency (PCE) of 3.7% is considered for the baseline model development. The device performance is further optimized by investigating 1) absorber thickness and defect density, 2) band alignment of Electron Transport Layer (ETL)/Absorber, ETL Doping concentration and absorber/ETL interface defect density, 3) band alignment of Hole Transport Layer (HTL)/Absorber, HTL Doping concentration, and absorber/HTL interface defect density, 4) work function of metal contacts, 5) series and shunt resistances. After device optimization, the simulated device under 1000 lux WLED is able to achieve Jsc, Voc, FF, and PCE of 1.8 mA cm−2, 1.46 V, 89.3%, and 45.05%, respectively. Further, an evaluation of the performance of the optimized device under various indoor light sources, including White Light Emitting Diode (WLED), halogen, and Compact Fluorescent Lamp (CFL), is conducted in order to assess its performance under widely utilized lighting conditions. © 2024 Wiley-VCH GmbH.