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Item Band gap engineering of mixed Cd(1?x)Zn(x)Se thin films(Elsevier Ltd, 2017) Santhosh, T.C.M.; Bangera, K.V.; Shivakumar, G.K.This paper deals with band gap engineering in CdZnSe thin films. This was achieved by adding different amounts of zinc selenide (ZnSe) to cadmium selenide (CdSe). The weight percentage of ZnSe (x) was varied from 0 to 1 in steps of 0.2. The films were prepared using thermal evaporation technique. The structural analysis was carried out using X-ray diffraction. Surface morphology and elemental composition of the grown films was investigated using scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) respectively. As deposited cadmium selenide thin films were dark reddish in color, changes to lemon-yellow with increase in ZnSe concentration. Electrical transport studies have been carried out using two probe method. Resistivity of the mixed films increased with increase in ZnSe concentration and it shows semiconducting behavior. It is observed that activation energy for conduction increases from 0.39 eV to 0.85 eV with increase in ZnSe concentration. Optical properties of the films were analyzed from absorption and transmittance studies. It is observed that the optical band gap increases gradually from 1.67 eV to 2.60 eV as ‘x’ varied from 0 to 1. © 2017 Elsevier B.V.Item Synthesis and band gap tuning in CdSe(1-x)Te(x) thin films for solar cell applications(Elsevier Ltd, 2017) Santhosh, T.C.M.; Bangera, K.V.; Shivakumar, G.K.Thin films of CdSe(1-x)Te(x) (x = 0 – 1) were grown on to the glass substrates by thermal evaporation method (PVD). The effect of annealing duration on the formation of single phase ternary alloys were systematically investigated. The prepared thin films were characterized by using FE-SEM, EDS and X-ray diffractometer. The X-ray diffraction studies shows that vacuum annealed films are polycrystalline in nature, and well oriented along a preferred direction of (0 0 2) for hexagonal and along (1 1 1) for cubic crystal structure. It is observed that increase in the CdTe concentration leads to change in the crystal structure from hexagonal to cubic. The absorption coefficients and optical band gaps were evaluated from spectrometric measurements. It is observed that optical band gap can be tuned from 1.67 eV to 1.51 eV as value of x varied from 0 to 1. © 2017 Elsevier LtdItem Effect of Bi doping on the properties of CdSe thin films for optoelectronic device applications(Elsevier Ltd, 2017) Santhosh, T.C.M.; Bangera, K.V.; G.k, S.CdSe and Bi (1%, 2%, 3%) doped CdSe thin films were deposited on the glass substrates using thermal evaporation technique. Effect of Bi doping on the structural, optical, electrical and photo response properties of CdSe thin films were investigated. The X-ray diffraction studies reveals that undoped and Bi doped CdSe films are polycrystalline in nature with hexagonal crystal structure along (002) direction. No significant changes are observed in the lattice parameters or the grain size indicating minimum lattice distortion. The optical band gap of undoped CdSe film was estimated to be 1.67 eV. Replacement of cadmium by bismuth results in an increase in the electrical conductivity of doped films. Doping with bismuth is found to improve the photo sensitivity of CdSe thin films. © 2017 Elsevier Ltd