Faculty Publications

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    Porous-Silicon Assisted Hybrid Plasmonic Slot Waveguide Based On-Chip Ethanol Sensor
    (Institute of Electrical and Electronics Engineers Inc., 2022) Reddy, S.K.; Singh, M.
    Refractive index (RI) sensors have an overarching compass jutting into the biological and chemical fields and hence are efficacious. The evinced work appertains with an infra-red (IR)-band ethanol sensor, perceived with a Metal-Insulator-Semiconductor-Insulator-Metal (MISIM) waveguide structure consisting of porous-silicon as the absorbing/sensing medium. It is validated through modeling, and numerical simulations that the enhanced electric field confined into a low index slot undergoes a red-shift in wavelength in the presence of harmful ethanol. The red-shift in wavelength can be controlled by changing the silicon porosity and the physical dimensions of the hybrid waveguide. With finite-element-method based COMSOL Multiphysics simulations, we have obtained the optimized metrics of the sensor namely sensitivity (S TM) = 400.43-612.43 nm/RIU, figure of merit (FoM) = 12.42-19.46/RIU, and quality factor (Q-factor) = 46.8-52.9, for 10% to 25% p-Si porosity. The fabrication stages of the on-chip sensor are also articulated in brief. The detailed assessment shows that this sensor is a feasible choice for ethanol detection in hazardous environments. © 2001-2012 IEEE.
  • Item
    Hybrid Plasmonic Waveguide Based Platform for Refractive Index and Temperature Sensing
    (Institute of Electrical and Electronics Engineers Inc., 2022) Sahu, S.K.; Reddy, S.K.; Singh, M.; Avrutin, E.
    A nanoscale 3D hybrid plasmonic waveguide (HPWG) refractive index-cum-temperature sensor has been proposed and simulated in this work. The aqueous analyte (benzene C6H6) sensing is possible over the wavelength range from 1.18∼μ m to 2.2∼μ m. A well-known refractive index (RI) sensing method (or wavelength interrogation) is considered for the proposed Si-TiO2-SiO2-Au nanostructure. The sensor design includes, titanium dioxide (TiO2) layer deposited over the silicon dioxide to enhance the overall sensitivity of the HPWG sensor. The finite element method (FEM) based 3D-numerical simulations are performed for an IR band signal, predicting 1022.75 nm/RIU device sensitivity and 2.95 nm/°C temperature sensitivity. The proposed sensor is suitable for next-generation on-chip biochemical sensing applications with nanoscale dimensions, low cost, and high sensitivity. © 1989-2012 IEEE.