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Item Theoretical Analysis of On-Chip Vertical Hybrid Plasmonic Nanograting(Springer, 2022) Reddy, S.K.; Sahu, S.K.; Khoja, R.; Kanu, S.; Singh, M.A complementary metal oxide semiconductor (CMOS) compatible photonic-plasmonic waveguide with nanoscale dimensions and better optical confinement has been proposed for the infrared (IR)–band applications. The design is based on the multi-layer hybrid plasmonic waveguide (Si–SiO2–Au) structure. The 3D-finite element method (FEM)–based numerical simulations of single slot hybrid plasmonic waveguide (HPWG) confirms 2.5 dB/cm propagation loss and 15 μm−2 confined intensity. Moreover, its application as dual-slot nanograting is studied with higher propagation length and ultra–low–dispersion near the 1550–nm wavelength. The proposed low-dispersion nanoscale grating design is suitable for future lab–on–chip nanophotonic integrated circuits. © 2021, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.Item Porous-Silicon Assisted Hybrid Plasmonic Slot Waveguide Based On-Chip Ethanol Sensor(Institute of Electrical and Electronics Engineers Inc., 2022) Reddy, S.K.; Singh, M.Refractive index (RI) sensors have an overarching compass jutting into the biological and chemical fields and hence are efficacious. The evinced work appertains with an infra-red (IR)-band ethanol sensor, perceived with a Metal-Insulator-Semiconductor-Insulator-Metal (MISIM) waveguide structure consisting of porous-silicon as the absorbing/sensing medium. It is validated through modeling, and numerical simulations that the enhanced electric field confined into a low index slot undergoes a red-shift in wavelength in the presence of harmful ethanol. The red-shift in wavelength can be controlled by changing the silicon porosity and the physical dimensions of the hybrid waveguide. With finite-element-method based COMSOL Multiphysics simulations, we have obtained the optimized metrics of the sensor namely sensitivity (S TM) = 400.43-612.43 nm/RIU, figure of merit (FoM) = 12.42-19.46/RIU, and quality factor (Q-factor) = 46.8-52.9, for 10% to 25% p-Si porosity. The fabrication stages of the on-chip sensor are also articulated in brief. The detailed assessment shows that this sensor is a feasible choice for ethanol detection in hazardous environments. © 2001-2012 IEEE.Item Nanoscale Tapered Hybrid Plasmonic Waveguide for On-Chip Silicon Photonics(Springer Science and Business Media B.V., 2022) Reddy, S.K.; Singh, M.Plasmonic waveguides which deploy surface plasmon-polariton (SPP) waves are of colossal interest to the researchers with their ability to realize and integrate nanophotonic circuits beyond the diffraction limit. In order to subjugate the demerits of plasmonic and dielectric waveguides, the light guided by plasmonic and dielectric waveguides are coupled to form hybrid plasmonic waveguide (HPWG). In this work, we have simulated a nanoscale tapered plasmonic waveguide (Au-SiO2-Si) using COMSOL Multiphysics software in the telecommunication C-band. The proposed waveguide shows better normalized effective mode area (Aeff/A= 0.056), enhanced electric field confinement, and long propagation length (Lp = 101.55 μm) with h= 350 nm, WAu = 100 nm, WSlot=20 nm, WSi = 220 nm, and ht=150 nm. The finite element method based approach shows that this enounced waveguide is a feasible choice for the future on-chip nanophotonic devices. © 2021, Springer Nature B.V.Item Hybrid Plasmonic Waveguide Based Platform for Refractive Index and Temperature Sensing(Institute of Electrical and Electronics Engineers Inc., 2022) Sahu, S.K.; Reddy, S.K.; Singh, M.; Avrutin, E.A nanoscale 3D hybrid plasmonic waveguide (HPWG) refractive index-cum-temperature sensor has been proposed and simulated in this work. The aqueous analyte (benzene C6H6) sensing is possible over the wavelength range from 1.18∼μ m to 2.2∼μ m. A well-known refractive index (RI) sensing method (or wavelength interrogation) is considered for the proposed Si-TiO2-SiO2-Au nanostructure. The sensor design includes, titanium dioxide (TiO2) layer deposited over the silicon dioxide to enhance the overall sensitivity of the HPWG sensor. The finite element method (FEM) based 3D-numerical simulations are performed for an IR band signal, predicting 1022.75 nm/RIU device sensitivity and 2.95 nm/°C temperature sensitivity. The proposed sensor is suitable for next-generation on-chip biochemical sensing applications with nanoscale dimensions, low cost, and high sensitivity. © 1989-2012 IEEE.