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Author: search.filters.author.Rawat, G.

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    Performance analysis of hybrid perovskite solar cells based on different halide ions
    (Elsevier Ltd, 2025) Jarwal, D.K.; Mishra, A.K.; Dubey, C.; Jangid, A.K.; Bhargava, K.; Kumar, R.; Rawat, G.
    Here, we have investigated the importance of incorporating different halide ions into perovskite material of the hybrid perovskites-based solar cells (PSCs) and optimized the performance of the PSCs. The n-i-p device structure as FTO/ZnOS/Absorber Material/CuO/Au, is used, where ZnOS and CuO are as electron and hole transport layers, respectively. The CH3NH3PbI3, CH3NH3PbBr3 and CH3NH3PbI3?xClx are exploited as an active absorber layer, with FTO and Au serving as front and back electrodes, respectively. Their performance is studied in terms of various performance parameters viz. Open-circuit voltage (Voc), short circuit current density (Jsc), fill factor (FF), and power conversion efficiency (PCE). Moreover, a systematic optimization and comparison is conducted to examine the influence of perovskite layer thickness, defect density, and operating temperature on the performance of the three modelled PSCs. The results show that CH3NH3PbI3 based hybrid PSC exhibits the highest PCE of 25.34 % at 300 K, at a defect density of 1015cm?3 and absorber layer thickness of 600 nm. The other key parameters include VOC of 1.15 V, JSC of 25.21 mA/cm2 and FF of 86.4 %. The analysis highlights the importance of numerical simulations in predicting the influence of structural variations in perovskite materials on performance of the hybrid perovskite solar cells. © 2025 Elsevier Ltd
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    Analytical insights into threshold voltage behaviour of vertical linearly doped fully depleted silicon-on-insulator MOSFETs
    (Institute of Physics, 2025) Sharma, S.; Goel, V.; Rawat, G.
    This paper presents a novel two-dimensional (2D) analytical model for the surface potential of a vertical linearly doped (VLD) fully depleted silicon-on-insulator (FDSOI) FET. Moreover, the channel electric field and threshold roll-off are modeled using the surface potential equations. The evanescent-mode analysis method has been employed to determine the channel potential, and ATLAS TCAD is utilised to simulate the subthreshold I–V characteristics of the device. The performance of the proposed device has been compared with the calibrated FDSOI FET. The proposed device demonstrates remarkable improvements over conventional FDSOI FETs: off-state leakage current plunges from 100 nA to 12 pA, while subthreshold swing sharpens from 110 mV dec?1 to 85 mV dec?1, yielding an exceptional ON-to-OFF current ratio enhancement from 7.2 × 103 to 2.8 × 107. The linearly doped channel in the proposed device is developed using the hetero epitaxy method. The proposed device can be used in integrated circuits (ICs) for low-power applications such as laptops and mobile phones. © 2025 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.