Faculty Publications
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Item Investigations on electrical properties of the CdxZn 1-xS thin films prepared by spray pyrolysis technique(2011) Raviprakash, Y.; Bangera, K.V.; Shivakumar, G.K.Thin films of CdxZn(1-x)S (0≤x≤1) were deposited on glass substrates by the chemical spray pyrolysis technique. The electrical properties of these films in relation with composition were studied in detail. The entire investigation was made for a wide range of compositions of CdxZn(1-x)S thin films (x=0 to 1 in steps of 0.1). The variations of conductivity and current-voltage characteristics of these films were investigated as a function of the temperature and applied voltage. The activation energy of the films was found to vary from 0.35 eV to 0.78 eV. © 2011 American Institute of Physics.Item X-ray diffraction studies of CdxZn1-xS thin films prepared by spray pyrolysis technique(2013) Raviprakash, Y.; Bangera, K.V.; Shivakumar, G.K.Thin films of CdxZn(1-x)S (0 ≤ x ≤ 1) were deposited on glass substrates by the chemical spray pyrolysis technique using a less used combination of chemicals. The variation of structural properties of these films in relation with composition was studied in detail. The entire study was made for a wide range of compositions of CdxZn (1-x) S thin films (x=0 to 1 in steps of 0.1). XRD studies reveal that all the films are polycrystalline with hexagonal (wurtzite) structure of which reflection peaks associated with (100), (002) and (110) planes were clearly identified for all the films and inclusion of cadmium into the structure of ZnS improved the crystallinity of the films. The value of lattice constants 'a' and 'c' was found to vary with composition from 0.382 to 0.415 nm and 0.625 to 0.675 nm respectively. © (2013) Trans Tech Publications, Switzerland.Item Preparation and characterization of CdxZn1-xS thin films by spray pyrolysis technique for photovoltaic applications(2009) Raviprakash, Y.; Bangera, K.V.; Shivakumar, G.K.CdxZn(1-x)S (x = 0, 0.2, 0.4, 0.6, 0.8, and 1) thin films were deposited by the chemical spray pyrolysis technique using a less used combination of chemicals. Depositions were done at 573 K on cleaned glass substrates. The composition, surface morphology and structural properties of deposited films were studied using EDAX, SEM and X-ray diffraction technique. XRD studies reveal that all the films are crystalline with hexagonal (wurtzite) structure and inclusion of Cd into the structure of ZnS improved the crystallinity of the films. In the entire compositions, the (0 0 2) diffraction peak is prominent which gives lattice matching to the chalcogenide semiconductor such as CuInxGa1-xSe2 and CuIn (s1-xSex)2, which are used in photovoltaic devices. The value of lattice constant 'a' and 'c' have been observed to vary with composition from 0.382 to 0.415 nm and 0.625 to 0.675 nm, respectively. The band gap of the thin films varied from 3.32 to 2.41 eV as composition varied from x = 0.0 to 1.0. It was observed that presence of small amount of cadmium results in marked changes in the optical band gap of ZnS. © 2009 Elsevier Ltd. All rights reserved.Item Growth, structural and optical properties of CdxZn1-xS thin films deposited using spray pyrolysis technique(2010) Raviprakash, Y.; Bangera, K.V.; Shivakumar, G.K.CdxZn(1-x)S (x = 0, 0.2, 0.4, 0.6, 0.8, and 1) thin films were deposited by the chemical spray pyrolysis technique using a less used combination of chemicals. Depositions were done at 573 K on cleaned glass substrates. The composition, surface morphology and structural properties of deposited films were studied using EDAX, SEM and X-ray diffraction technique. XRD studies reveal that all the films are crystalline with hexagonal (wurtzite) structure and inclusion of Cd into the structure of ZnS improved the crystallinity of the films. The value of lattice constant 'a' and 'c' have been observed to vary with composition from 0.382 to 0.415 nm and 0.625 to 0.675 nm, respectively. The band gap of the thin films varied from 3.32 to 2.41 eV as composition varied from x = 0.0-1.0. It was observed that presence of small amount of cadmium results in marked changes in the optical band gap of ZnS. © 2009 Elsevier B.V. All rights reserved.Item Role of soaking time on the phase evolution of Cu2ZnSnS4 polycrystals synthesized using melting route for photovoltaic applications(Elsevier Ltd, 2019) Choudhari, N.J.; Raviprakash, Y.; Fernandes, B.J.; Udayashankar, N.K.Cu2ZnSnS4(CZTS) is an emerging quaternary semiconductor material to use as absorber layer for solar cells due its suitable band gap, high absorption coefficient, earth abundancy and less toxic nature. This work provides a comprehensive insight into the phase evolution of CZTS synthesized at a relatively lower process time. In this study, CZTS bulk polycrystals were synthesized using elemental pre cursors via melting route. The influence of soaking time on the structural, compositional and optical properties were investigated using XRD, EDS, Raman, DRS, PL and XPS measurements. XRD pattern revealed a highly crystalline tetragonal structure corresponding to kesterite phase. EDS mapping were performed over a large area of the sample revealed homogeneous distribution and near stoichiometric composition for the sample soaked for 14 h (S14). Raman spectra confirmed the existence of single phase CZTS without any secondary and ternary phases for S14. Diffuse reflectance spectroscopy gave a band gap value in the range 1.34–1.39 eV. PL analysis revealed that asymmetric band shape and higher energy shift is the characteristics of radiative transitions which are influenced by fluctuating potentials. XPS studies confirmed the oxidation states as Cu(I), Zn(II), Sn(IV) and S(II). © 2019 Elsevier B.V.Item Unveiling the mass-loading effect on the electrochemical performance of Mn3O4 thin film electrodes: a combined computational and experimental study(Institute of Physics, 2024) Pramitha, A.; Hegde, S.S.; Badekai Ramachandra, B.R.; Yadav K, C.; Chakraborty, S.; Ravikumar, A.; George, S.D.; Sudhakar, Y.N.; Raviprakash, Y.The remarkable storage performance of manganese oxide (Mn3O4) makes it an appealing option for use as electrodes in electrochemical capacitors. However, the storage kinetics were significantly influenced by the mass loading of the electrode. Herein, we have inspected the dependency of mass loading on the storage performance of the spray pyrolyzed Mn3O4 thin film electrodes along with the correlation of structural and morphological characteristics. X-ray diffraction and Raman spectroscopic studies proven the formation of spinel Mn3O4 with a tetragonal structure. Morphological analysis revealed that all films exhibited fibrous structures with interconnected patterns at higher mass loadings. Moreover, the surface roughness and wettability of the electrode surface were influenced by variations in mass loading. Notably, thin-film electrode with a mass loading of 0.4 mg cm?2 exhibited the highest specific capacitance value of 168 F g?1 at 5 mV s?1 in a three-electrode system. Further, electrochemical impedance spectroscopic studies showed that there were noticeable changes in the capacitive behaviour of the electrode with respect to variations in mass loading. Moreover, the Dunn approach was employed to differentiate the underlying storage mechanism of the Mn3O4 electrode. Additionally, first-principles Density Functional Theory (DFT) studies were carried out in connection with the experimental study to comprehend the structure and electronic band structure of Mn3O4. This study underscores the critical importance of mass loading for enhancing the storage performance of Mn3O4 thin-film electrodes. © 2024 The Author(s). Published by IOP Publishing Ltd.