Faculty Publications

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Author: search.filters.author.Raviprakash, Y.Subject: search.filters.subject.Energy gap

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    Preparation and characterization of CdxZn1-xS thin films by spray pyrolysis technique for photovoltaic applications
    (2009) Raviprakash, Y.; Bangera, K.V.; Shivakumar, G.K.
    CdxZn(1-x)S (x = 0, 0.2, 0.4, 0.6, 0.8, and 1) thin films were deposited by the chemical spray pyrolysis technique using a less used combination of chemicals. Depositions were done at 573 K on cleaned glass substrates. The composition, surface morphology and structural properties of deposited films were studied using EDAX, SEM and X-ray diffraction technique. XRD studies reveal that all the films are crystalline with hexagonal (wurtzite) structure and inclusion of Cd into the structure of ZnS improved the crystallinity of the films. In the entire compositions, the (0 0 2) diffraction peak is prominent which gives lattice matching to the chalcogenide semiconductor such as CuInxGa1-xSe2 and CuIn (s1-xSex)2, which are used in photovoltaic devices. The value of lattice constant 'a' and 'c' have been observed to vary with composition from 0.382 to 0.415 nm and 0.625 to 0.675 nm, respectively. The band gap of the thin films varied from 3.32 to 2.41 eV as composition varied from x = 0.0 to 1.0. It was observed that presence of small amount of cadmium results in marked changes in the optical band gap of ZnS. © 2009 Elsevier Ltd. All rights reserved.
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    Growth, structural and optical properties of CdxZn1-xS thin films deposited using spray pyrolysis technique
    (2010) Raviprakash, Y.; Bangera, K.V.; Shivakumar, G.K.
    CdxZn(1-x)S (x = 0, 0.2, 0.4, 0.6, 0.8, and 1) thin films were deposited by the chemical spray pyrolysis technique using a less used combination of chemicals. Depositions were done at 573 K on cleaned glass substrates. The composition, surface morphology and structural properties of deposited films were studied using EDAX, SEM and X-ray diffraction technique. XRD studies reveal that all the films are crystalline with hexagonal (wurtzite) structure and inclusion of Cd into the structure of ZnS improved the crystallinity of the films. The value of lattice constant 'a' and 'c' have been observed to vary with composition from 0.382 to 0.415 nm and 0.625 to 0.675 nm, respectively. The band gap of the thin films varied from 3.32 to 2.41 eV as composition varied from x = 0.0-1.0. It was observed that presence of small amount of cadmium results in marked changes in the optical band gap of ZnS. © 2009 Elsevier B.V. All rights reserved.
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    Role of soaking time on the phase evolution of Cu2ZnSnS4 polycrystals synthesized using melting route for photovoltaic applications
    (Elsevier Ltd, 2019) Choudhari, N.J.; Raviprakash, Y.; Fernandes, B.J.; Udayashankar, N.K.
    Cu2ZnSnS4(CZTS) is an emerging quaternary semiconductor material to use as absorber layer for solar cells due its suitable band gap, high absorption coefficient, earth abundancy and less toxic nature. This work provides a comprehensive insight into the phase evolution of CZTS synthesized at a relatively lower process time. In this study, CZTS bulk polycrystals were synthesized using elemental pre cursors via melting route. The influence of soaking time on the structural, compositional and optical properties were investigated using XRD, EDS, Raman, DRS, PL and XPS measurements. XRD pattern revealed a highly crystalline tetragonal structure corresponding to kesterite phase. EDS mapping were performed over a large area of the sample revealed homogeneous distribution and near stoichiometric composition for the sample soaked for 14 h (S14). Raman spectra confirmed the existence of single phase CZTS without any secondary and ternary phases for S14. Diffuse reflectance spectroscopy gave a band gap value in the range 1.34–1.39 eV. PL analysis revealed that asymmetric band shape and higher energy shift is the characteristics of radiative transitions which are influenced by fluctuating potentials. XPS studies confirmed the oxidation states as Cu(I), Zn(II), Sn(IV) and S(II). © 2019 Elsevier B.V.