Faculty Publications
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Item Electrical Characterization of Hybrid Hetero Interface using n-ZnO and p-CuPc(Elsevier Ltd, 2015) Raveendra Kiran, M.R.; Ulla, H.; Fernandes, J.M.; Satyanarayan, M.N.; Umesh, G.In the present work we report the fabrication, current density-voltage (J-V) characteristics, capacitance-voltage characteristics and impedance measurements of the n-ZnO nanoparticles/ p-CuPc hybrid junction. ZnO nanoparticles were synthesized by sol-gel method. The J-V characteristics clearly show the diode like behaviour. The junction behaviour has been investigated using surface topography (AFM), capacitance and electrical impedance studies. © 2015 Elsevier Ltd.Item Investigation of hole-injection in ?-NPD using capacitance and impedance spectroscopy techniques with F4TCNQ as hole-injection layer: Initial studies(Academic Press, 2014) Fernandes, J.M.; Raveendra Kiran, M.R.; Ulla, H.; Satyanarayan, M.N.; Umesh, G.The charge accumulation leading to injection at the organic interface in the sequentially doped hole-only device structure is studied using capacitance and impedance based spectroscopic techniques. In this paper, we investigate the role of p-type dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) in the charge transport properties of N,N'-Di(1-naphthyl)-N,N'-diphenyl-(1,1?-biphenyl)-4,4?-diamine (?-NPD) through sequential deposition. We show that the hole injection into ?-NPD increases with the increase of interlayer (F4TCNQ) thickness by correlating the current density-voltage, capacitance-voltage, capacitance-frequency and impedance measurements. © 2014 Elsevier Ltd. All rights reserved.Item Blue emitting halogen-phenoxy substituted 1,8-naphthalimides for potential organic light emitting diode applications(Elsevier B.V., 2014) Ulla, H.; Raveendra Kiran, M.R.; Garudachari, B.; Satyanarayan, M.N.; Umesh, G.; Isloor, A.M.In this paper, we report the synthesis and characterization of six 1,8-naphthalimides [4a-4c and 5a-5c] obtained by the substitution of electron donating halogen-phenoxy groups at the C-4 position. The derivatives were characterized using 1H NMR, 13C NMR, mass spectra, FT-IR, single crystal XRD; photophysical, thermal, surface morphological and electrochemical properties were also investigated. The derivatives exhibit deep blue photoluminescence in the range 414-423 nm (in CHCl3) and 457-466 nm (in thin film state) on UV excitation with high Stokes' shifts and good chromaticity. The TGA and DSC analysis showed that the derivatives possess good thermal stability (271-284 °C) and melting points (138-201 °C). The HOMO and LUMO energy levels estimated by cyclic voltammetry are in the range 6.21-6.34 eV and 3.31-3.41 eV respectively corresponding to energy band gaps of 2.98-3.15 eV. These energy values are relatively higher than the commonly used electron transporting materials. The optical and electronic properties of the derivatives were tuned by the introduction of different electron donating halogen-phenoxy groups through C-4 position of the naphthalimide moiety. The emissive and electron-transporting properties of the naphthalimide derivative 4a were studied by fabricating a bi-layer and tri-layer devices. Further a phosphorescent device with 4a as electron transport layer (ETL) exhibited superior performance than the device without any ETL and was comparable with the device using standard Alq3 as ETL. These results indicate that the synthesized naphthalimide derivatives could play an important role in the development of OLEDs. © 2014 Elsevier B.V. All rights reserved.Item Efficacy of titanium doped-indium tin oxide (Ti/TiO2-ITO) films in rapid oxygen generation under photocatalysis and their suitability for bio-medical application(2014) Subrahmanyam, A.; Ananthakrishnan, A.; Rakibuddin, M.; Paul Ramesh, T.; Raveendra Kiran, M.R.; Shankari, D.; Chandrasekhar, K.The present work describes in detail the photocatalytic properties of controlled titanium doped indium tin oxide (Ti/TiO2-ITO) composite thin films prepared by DC magnetron sputtering and their applicability to developing a bio-medical lung assistive device. The catalytic films of various thicknesses (namely, C1, C2, C3 and C4) were characterized using surface imaging (SEM), X-ray analyses (XRD and EDX), and Raman studies. The optical band gaps of the prepared films are ?3.72-3.77 eV. Photocatalytic efficiencies of the film catalysts were investigated with the aid of a model organic molecule (Rhodamine B dye). The overall photodegradation capacity of the films was found to be slow kinetically, and the catalyst C1 was identified as having a better degradation efficiency (RhB 5 ppm, at pH 6.5) over 5 h under irradiation at 254 nm. The distinctive features of these composite films lie in their oxygen accumulation capacity and unique electron-hole pair separation ability. Investigations on oxygen species revealed the formation of superoxide radicals in aqueous systems (pH 6.5). The prepared films have TiO2 in the anatase phase in the surfaces, and possess the desired photocatalytic efficiency, compatibility to the heme system (are not involved in harmful hydroxyl radical production), and appreciable reusability. Especially, the thin films have a significant ability for mobilization of oxygen rapidly and continuously in aqueous medium under the irradiation conditions. Hence, these films may be a suitable choice for the photo-aided lung assistive design under development. © the Partner Organisations 2014.Item Investigation of hole transport in ?-NPD using impedance spectroscopy with F4TCNQ as hole-injection layer(Academic Press, 2015) Fernandes, J.M.; Raveendra Kiran, M.R.; Ulla, H.; Satyanarayan, M.N.; Umesh, G.The charge carrier transport is studied in N,N?-di(1-naphthyl)-N,N?-diphenyl-(1,1?-biphenyl)-4,4?-diamine (?-NPD) with the incorporation of sequentially doped p-type dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) as hole-injection layer in hole-only device structures. The field dependent mobility of the charge carriers is determined using frequency dependent capacitance, conductance and impedance methods by varying the thickness of ?-NPD. The Poole-Frenkel zero-field mobility and the Poole-Frenkel coefficient thus obtained for each device in all the three methods is found to be almost constant. © 2015 Elsevier Ltd. All rights reserved.Item Investigation of charge transport in Vanadyl-phthalocyanine with molybdenum trioxide as a buffer layer: Impedance spectroscopic analysis(Elsevier Ltd, 2015) Raveendra Kiran, M.R.; Ulla, H.; Krishnamanohara; Satyanarayan, M.N.; Umesh, G.Charge transport in organic materials is one of the intrinsic properties, which governs the device performance. In this paper, we report the fabrication and electrical characterization of two diodes ITO/VOPc/MoO3/Al and ITO/VOPc/Al. We investigate the electrical conduction of Vanadyl phthalocyanine (VOPc) in both the devices and also the effect of MoO3 as a buffer layer. Improvement of current density through the device is estimated using current density - voltage characteristics and capacitance - voltage characteristics. Space charge limited current (SCLC) conduction with an exponential trap distribution is observed from Impedance measurements. The dominant hopping charge transport is discussed based on ac conductivity measurements and by adopting Correlated barrier hopping (CBH) model. © 2015 Elsevier B.V. All rights reserved.Item Pyrene-Oxadiazoles for Organic Light-Emitting Diodes: Triplet to Singlet Energy Transfer and Role of Hole-Injection/Hole-Blocking Materials(American Chemical Society service@acs.org, 2016) Chidirala, S.; Ulla, H.; Valaboju, A.; Raveendra Kiran, M.R.; Mohanty, M.E.; Satyanarayan, M.N.; Umesh, G.; Bhanuprakash, K.; Rao, V.J.Three pyrene-oxadiazole derivatives were synthesized and characterized by optical, electrochemical, thermal, and theoretical investigations to obtain efficient multifunctional organic light emitting diode (OLED) materials. Synthesized molecules were used as emitters and electron transporters in three different device configurations, involving hole-injection/hole-blocking materials that showed good current and power efficiencies. To understand the underlying mechanisms involved in the application of these molecules as emitters and transporters, a detailed photophysical characterization of molecules 4-6 was carried out. The absorption, steady-state fluorescence, phosphorescence, fluorescence lifetime, and phosphorescence lifetime measurements were carried out. The high quantum yield and efficient reverse intersystem crossing leading to delayed fluorescence emission makes the molecule a good emitter, and the charge delocalization properties leading to excimer formation make them efficient electron transporters. Isoenergetic singlet and triplet states of the molecules make the reverse intersystem crossing feasible at room temperature even in the absence of thermal activation. © 2015 American Chemical Society.Item Effect of deposition rate on the charge transport in Vanadyl-phthalocyanine thin films(Elsevier Ltd, 2017) Raveendra Kiran, M.R.; Ulla, H.; Satyanarayan, M.N.; Umesh, G.We report fabrication of Vanadyl phthalocyanine (VOPc) based diodes with different deposition rates (0.1, 1 and 5 Å/s) in hole only device configuration: ITO/MoO3/VOPc/MoO3/Al. The dc and ac electrical conductivity of Vanadyl phthalocyanine based devices is investigated by employing Impedance spectroscopy measurements. The frequency dependence of conductivity indicates that the dominant mechanism for charge transport is the hopping type. Further, the dependence of conductivity on temperature and bias voltage clearly indicates that the hopping mechanism is described by the correlated barrier hopping (CBH) model. The thin layer (3 nm) of MoO3 in our devices is seen to enhance the electrical conductivity. J-V measurements indicate that the current density J as well as the charge carrier mobility are higher for the devices fabricated at a relatively lower deposition rate (0.1 Å/s). Our results suggest that the VOPC films deposited at lower rates are more appropriate for the optoelectronic device applications. © 2016 Elsevier B.V.Item Blue emitting 1,8-naphthalimides with electron transport properties for organic light emitting diode applications(Elsevier B.V., 2017) Ulla, H.; Raveendra Kiran, M.R.; Garudachari, B.; Ahipa, T.N.; Tarafder, K.; Vasudeva Adhikari, A.; Umesh, G.; Satyanarayan, M.N.In this article, the synthesis, characterization and use of two novel naphthalimides as electron-transporting emitter materials for organic light emitting diode (OLED) applications are reported. The molecules were obtained by substituting electron donating chloro-phenoxy group at the C-4 position. A detailed optical, thermal, electrochemical and related properties were systematically studied. Furthermore, theoretical calculations (DFT) were performed to get a better understanding of the electronic structures. The synthesized molecules were used as electron transporters and emitters in OLEDs with three different device configurations. The devices with the molecules showed blue emission with efficiencies of 1.89 cdA-1, 0.98 lmW?1, 0.71% at 100 cdm-2. The phosphorescent devices with naphthalimides as electron transport materials displayed better performance in comparison to the device without any electron transporting material and were analogous with the device using standard electron transporting material, Alq3. The results demonstrate that the naphthalimides could play a significant part in the progress of OLEDs. © 2017 Elsevier B.V.Item Optoelectronic properties of hybrid diodes based on vanadyl-phthalocyanine and zinc oxide(Academic Press, 2017) Raveendra Kiran, M.R.; Ulla, H.; Satyanarayan, M.N.; Umesh, G.We report an investigation of the optoelectronic properties of a hybrid p-n diode device fabricated using ZnO film prepared by sol-gel technique on which a VOPc organic film is deposited by vacuum evaporation. The charge transport properties of devices having the configurations ITO/ZnO/Al and ITO/ZnO/VOPc/MoO3/Al were investigated at different annealing temperatures (150 °C, 250 °C, 350 °C and 450 °C) by Impedance Spectroscopy (IS). The structural, morphological, optical and electrical properties were also studied at different annealing temperatures. The parameters related to the ITO/ZnO and ZnO/VOPc interfaces such as ideality factor (n), barrier height (q?B) and rectification ratio (RR) of the diodes were determined from current density-voltage (J-V) characteristics. IS measurements suggest that the large photocurrent generated is due to the decrease in bulk resistance of the device on account of the generation of electron-hole pairs in the organic active layer when exposed to light. The RR and the photocurrent responsivity (Rph) values obtained from the J-V characteristics compare well with those obtained from the IS measurements. It was observed that the absolute value of Rph (470 mA/W) for the p-n diode with ZnO annealed at 350 °C is high compared to that of diodes with different ZnO annealing temperatures. These values also agree well with the values obtained for p-n diodes of other phthalocyanines. Our studies clearly demonstrate that a p-n diode with ZnO film annealed at 350 °C exhibits much better optoelectronic characteristics on account of increased grain size, improved charge injection due to the reduction of barrier height and hence higher (up to 5 orders) charge carrier mobility. © 2017 Elsevier Ltd