Faculty Publications
Permanent URI for this communityhttps://idr.nitk.ac.in/handle/123456789/18736
Publications by NITK Faculty
Browse
Search Results
Item Nanocatalyst-induced hydroxyl radical (·OH) slurry for tungsten CMP for next-generation semiconductor processing(Springer, 2020) Poddar, M.K.; Ryu, H.-Y.; Yerriboina, N.P.; Jeong, Y.-A.; Lee, J.-H.; Kim, T.-G.; Kim, J.-H.; Park, J.-D.; Lee, M.-G.; Park, C.-Y.; Han, S.-J.; Choi, J.-G.; Park, J.-G.Chemical mechanical polishing (CMP) is one of the important steps that involves during fabrication of semiconductor devices. This research highlights the importance of tungsten (W) polishing slurries consisting of a novel nonionic, heat-activated FeSi nanocatalyst on the performance of W chemical mechanical polishing. The results obtained from the polishing data showed a higher W removal rate of 5910 Å/min with a slurry consisting of FeSi nanocatalyst at a polishing temperature of 80 °C. The increase in W polishing rate using FeSi slurry was explained on the basis of formation of a thicker oxide layer (WO3) due to the interaction between the W surface and hydroxyl radicals (·OH) generated via the reaction between FeSi and hydrogen peroxide at 80 °C. Higher ·OH generation and increase in oxygen depth profile of W film were confirmed by UV–Vis spectrometer and AES analysis, respectively. Compared to Fe(NO3)3 catalyst, the slurry with FeSi showed a higher static etch rate at 80 °C. Potentiodynamic polarization results obtained using FeSi slurry showed thicker WO3 passivation layer as compared to the slurry with Fe(NO3)3. The increase in the polishing rate of W CMP using slurry with FeSi nanocatalyst can be essentially attributed to the generation of much stronger oxidant ·OH due to its increased catalytic effect at a high polishing temperature of 80 °C. © 2019, Springer Science+Business Media, LLC, part of Springer Nature.Item Comparative evaluation of organic contamination sources from roller and pencil type PVA brushes during the Post-CMP cleaning process(Elsevier Ltd, 2020) Lee, J.-H.; Poddar, M.K.; Han, K.-M.; Ryu, H.-Y.; Yerriboina, N.P.; Kim, T.-G.; Wada, Y.; Hamada, S.; Hiyama, H.; Park, J.-G.In post-CMP (chemical mechanical polishing) processing, the use of poly vinyl acetal (PVA) brushes to clean the wafer surface is one of the most effective and prominent techniques applied for the removal of CMP contaminants. Recently, organic contaminants induced in different types of PVA brushes during brush manufacturing have been drawing substantial research interest in CMP communities. In this study, investigated the root cause of these residual organic impurities in two different types of PVA brushes was investigated: roller and pencil type brushes. PVA roller brushes have a skin layer due to the brush molding process, but pencil-type PVA brushes do not have the skin layer. Extraction of organic impurities from both types of brushes was accomplished using an ultrasound-assisted technique at a sonication frequency of 40 kHz, and input power of 600 W. Further evaluation of these organic impurities using Field Emission Scanning Electron Microscopy (FE-SEM) revealed a large number of organic impurities in roller brushes and negligible impurities in pencil brushes. Time of flight secondary ion mass spectrometry (TOF-SIMS) analysis confirmed polydimethylsiloxane (PDMS) as the organic impurities extracted from PVA roller brushes, which were generated during the brush manufacturing process. The PDMS content in PVA roller brushes was further analyzed using FE-SEM micrographs via dissolving the organic impurities in tetramethylammonium hydroxide solution (TMAH). During brush fabrication, the high content of PDMS organic impurities in roller PVA brushes is essentially attributed to the presence of the additional skin layer formed by the mold releasing agent at the mold-cavity interface. © 2020 Elsevier Ltd