Faculty Publications
Permanent URI for this communityhttps://idr.nitk.ac.in/handle/123456789/18736
Publications by NITK Faculty
Browse
7 results
Search Results
Item Growth of Very Large MoS2Single Crystals Using Out-Diffusion Transport and Their Use in Field Effect Transistors(Institute of Electrical and Electronics Engineers Inc., 2021) Pandey, S.K.; Izquierdo, N.; Campbell, S.Monolayer molybdenum disulfide (MoS2) is an attractive 2D material with a wide range of potential applications in the field of electronics and optoelectronics. To obtain the best performance, it is very necessary to grow large area single crystals of MoS2 (single domain) to avoid the effects of grain boundaries, but is exceptionally challenging to do this. Here, we report a novel method which we call out-diffusion vapor transport to grow large area single crystal monolayer MoS2 using an otherwise conventional chemical vapor deposition system. In this method, microchannels were created on the boat to significantly limit the region where MoOx vapor can react with S vapor to form crystals. This growth method resulted in triangular monolayer MoS2 single crystals up to ?640 ?m on a side grown on an oxidized silicon substrate, the largest crystals reported to date. Most of these crystals were multilayer at the center. This common feature has been identified in the literature as partially reduced transition metal oxide nucleates a second layer. We also achieved fully monolayer MoS2 single crystals up to ?450 ?m on a side, the largest demonstrated without the MoOx. Fabricated field effect transistors (FET) using MoS2 monolayer crystal as the active layer demonstrate a conventional n-type behavior, room-temperature mobility up to 45.5 cm2 V-1 s-1 and a maximum ON-Current (ION)/OFF-current (IOFF) ratio of 1.8 × 107. Raman and Photoluminescence results indicate that the as-grown large area monolayer crystals have high crystalline quality and uniformity with minimal defects, a finding that is consistent with the high electron mobility. This research work provides a superior technique to grow large-area high-quality single-crystal monolayer MoS2 without resorting to exotic equipment or techniques. © 2002-2012 IEEE.Item Theoretical investigations of band alignments and SnSe BSF layer for low-cost, non-toxic, high-efficiency CZTSSe solar cell(Elsevier Ltd, 2021) Prabhu, S.; Pandey, S.K.; Chakrabarti, S.In this work, a numerical simulation approach is utilized using SCAPS-1D software to model, modify, optimize, and evaluate the CZTSSe solar cell structure. For the CZTSSe solar cell, one possible reason hindering the performance is improper band alignment between the absorber and the buffer layers. With conventional CdS as a buffer layer, having a fixed bandgap, tuning the band alignment is impossible. To overcome this issue, Cd-free zinc oxide-based compounds Zn(O1-xSx), Zn1-xSnxO, and Zn1-xMgxO are explored as buffer layers, and their performance is evaluated. Using their composition-dependent tunable bandgap as an advantage, suitable band alignment with the absorber layer is evaluated for equal or higher performance when compared to CdS. Further performance improvement is attempted by using SnSe as the back surface field (BSF) layer. Band alignment evaluation is also extended to the back contact (Mo)/SnSe interface, whereby an attempt is made to replace Mo with a suitable metal. The Ni is found as a good candidate to replace Mo to achieve high-efficiency solar cell. The same approach is repeated with the transparent conducting oxide layer, and aluminum doped zinc oxide (AZO) is found as a suitable material in place of ITO for optimized solar cell structure. A maximum power conversion efficiency of 17.55% is achieved with an optimized structure. It is also observed that the external quantum efficiency (EQE) of the solar cell is improved significantly in the blue photons region in comparison to the EQE of the champion solar cell. The optimized structure Ni/SnSe/CZT(S0.4Se0.6)/Zn(O0.3S0.7)/i-ZnO/AZO in this work will be very useful to fabricate low-cost and Cd-free high-efficiency kesterite solar cells. © 2021Item Large and Uniform Single Crystals of MoS2Monolayers for ppb-Level NO2Sensing(American Chemical Society, 2022) Patel, C.; Singh, R.; Dubey, M.; Pandey, S.K.; Upadhyay, S.N.; Kumar, V.; Sriram, S.; Than Htay, M.; Pakhira, S.; Atuchin, V.V.; Mukherjee, S.Recently, unprecedented interest has been immersed toward the synthesis of two-dimensional (2D) transition metal dichalcogenides via the chemical vapor deposition (CVD) system. Synthesis of a uniform and large-sized monolayer MoS2atomic thin film via CVD is still a major bottleneck owing to strong dependence on diverse associated growth parameters. In this work, we have proposed the most viable recipe which is suitable for controlling the nucleation density of Mo and producing a 90 μm-long MoS2monolayer crystal and (695 × 394.8) μm2large MoS2monolayered film on SiO2/Si and c-plane sapphire, respectively. Moreover, MoS2monolayer sensing performance has been thoroughly investigated for NO2exposure at room temperature with a varying response of 4-57.5 for the 100-100 ppm level. Furthermore, the MoS2monolayer sensor exhibits an ultrasensitive NO2detection with limit of detection and limit of qualification values of 1.4 and 4.6 ppb, respectively. In addition, the first-principles-based density functional theory has been employed to analyze the adsorption of NO2on the surfaces of the 2D MoS2monolayer. It is observed that the electronic band gap of the MoS2monolayer after NO2adsorption is reduced by 0.7 eV due to molecular orbital hybridization. © 2022 American Chemical Society. All rights reserved.Item Innovative structural engineering of sustainable and environment-friendly Cu2ZnSnS4 solar cell for over 20% conversion efficiency(John Wiley and Sons Ltd, 2022) Prabhu, S.; Pandey, S.K.; Chakrabarti, S.Kesterite Cu2ZnSnS4(CZTS) thin-film technology has been comprehensively investigated over the last decade as a promising candidate in the field of photovoltaic technologies. However, despite numerous strategies to improve the performance, the efficiencies remain stagnant at around 11%. Poorly optimized absorber/buffer interface, non-absorption of higher wavelength photons, and non-ohmic back contact are the primary reasons for the poor performance of the CZTS solar cell. The authors of this paper propose a cadmium-free buffer layer, multiple quantum wells (MQWs) structure, and a back surface field (BSF) layer to overcome these issues, respectively. In this study, the buffer layer, zinc oxysulfide (Zn[O1−xSx]) is considered as an alternative to toxic Cadmium Sulfide (CdS) for better band alignment with the CZTS absorber layer. Cu2ZnSn(SxSe1−x)4 (CZTSSe) is used as a quantum well material in MQWs to increase photon absorption in CZTS solar cells. Tin selenide (SnSe) is used as the BSF layer to reduce the effect of non-ohmic back contact and to improve the open-circuit voltage (Voc) of MQW incorporated CZTS solar cells. Detailed analysis and optimization of the modified structure with higher performance are presented. The simulation results obtained provide imperative guidelines for the fabrication of high-efficiency CZTS solar cells using non-toxic and earth-abundant materials. © 2022 John Wiley & Sons Ltd.Item Effect of Introducing Defects and Doping on Different Properties of Monolayer MoS2(John Wiley and Sons Inc, 2023) Prajakta, K.; Vinturaj, V.P.; Singh, R.; Garg, V.; Pandey, S.K.; Pandey, S.K.Herein, the comprehensive study of different properties of undoped MoS2, MoS2 lattice with sulfur (S) and, molybdenum (Mo) vacancy, and MoS2 with substitutional doping of niobium (Nb), vanadium (V), and zinc (Zn) atoms is done. The density functional theory (DFT) is used and the electronic properties like density of states, band structure, electron density, and optical properties like dielectric function, optical conductivity, and refractive index are studied. It is observed that undoped MoS2 monolayer shows direct bandgap semiconductor characteristics with a bandgap of around 1.79 eV. P-type characteristics are observed for Nb-, V-, and Zn-doped MoS2 lattices. The real part and imaginary parts of all optical parameters along x and z directions for different MoS2 supercells are found to be anisotropic in nature up to a photon energy of almost 11 eV and thereafter they show nearly isotropic nature. Finally, it is found that the obtained properties of MoS2 monolayer as per literature are suitable for next-generation MOSFET application. © 2023 Wiley-VCH GmbH.Item Design and fabrication of all-inorganic transport materials-based Cs2SnI6 perovskite solar cells(Springer, 2023) Kumari, D.; Jaiswal, N.; Shukla, R.; Punetha, D.; Pandey, S.K.; Pandey, S.K.With lead-based perovskite materials, lead content and long-term stability are the big concerns. Recently, Cesium tin iodide (Cs2SnI6) double perovskite has gained recognition as a stable and environment-friendly photovoltaic material compared to lead-based perovskite materials. In the present study, we have investigated Cs2SnI6 based solar cell with all inorganic transport materials using SCAPS-1D. The optimized device exhibited a maximum efficiency of about 18%. Further we fabricated Cs2SnI6 perovskite films using a solution process approach, utilizing CsI and SnI4 in a 2:1 ratio. For synthesized double perovskite film, the crystallinity, morphologies, and optical characteristics were examined. Additionally, the stability analysis confirmed that the prepared perovskite films were stable for more than two months under ambient exposure. Finally, utilizing the synthesized Cs2SnI6 thin films as an absorber material, we fabricated two solar cells without and with hole transport layer (HTL), having configurations of glass/FTO/ZnO/Cs2SnI6/Ni and glass/FTO/ZnO/Cs2SnI6/ MoS2/Ni, respectively, in the ambient conditions. As a major finding, it has been observed that the inclusion of MoS2 as HTL improved overall performance, with an enhancement in the power conversion efficiency (PCE) of nearly 45% compared to the device without HTL. © 2023, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.Item Optimization of Quantum Capacitance of Functionalized VS2 Monolayer Electrodes to Shrink Hybrid Supercapacitors for On-Chip Energy Sources(American Chemical Society, 2025) Yadav, A.K.; Thiyyakkandy, J.; Singh, R.; Das, P.P.; Ajith, K.M.; Pandey, S.K.Quantum capacitance (CQ) of the electrodes plays an important role in enhancing the performance of supercapacitors by directly affecting the overall capacitance. In this study, several approaches including doping, creating vacancy, and adsorption have been used to enhance the CQ of the vanadium disulfide (VS2) electrode using density functional theory calculation. The undoped VS2 monolayer shows a maximum CQ value of 20.19 ?F/cm2. After creating V-vacancy (Vv) in the VS2 monolayer lattice, the CQ value increased to 35.61 ?F/cm2, which is the highest among all doped and defective VS2 lattices at room temperature. When we use VS2 electrodes for supercapacitors, generally ion adsorption occurs at the electrode surface, showing the necessity to investigate the adsorption of alkali/alkaline atoms (Li, Na, K, and Mg) at the VS2 surface to know the change in different properties of the electrode. It is found that generally CQ reduces due to the adsorption of alkali/alkaline atoms at the surface, but the K-adsorption at S-vacancy (Vs) VS2 demonstrated the increment of CQ value from 21.75 to 35.32 ?F/cm2 at room temperature. Additionally, the variation of the adsorption distance of the K atom at the Vs-VS2 surface revealed an optimum distance of value 3.5 Å, indicating that the K atom (radius = 2.43 Å) stabilizes just above the VS2 surface. Moreover, augmentation in CQ was seen with a decrease in temperature and attained a value of 49.96 ?F/cm2 at 100 K. The calculated CQ and open-circuit voltage (OCV) duly confirmed that the K-adsorbed Vs-VS2 is a potential candidate for the anode of hybrid supercapacitors as it has a maximum CQ value at the positive side of the electrochemical potential and an average OCV value of +0.615 V. This study reveals that the CQ of the VS2 electrode can be increased to minimize the size of high-performance hybrid supercapacitors for its application as an on-chip energy source. © 2025 American Chemical Society.