Faculty Publications

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    Development of low temperature stoichiometric solution combustion derived transparent conductive ternary zinc tin co-doped indium oxide electrodes
    (Royal Society of Chemistry, 2017) Pujar, P.; Gandla, S.; Singh, M.; Gupta, B.; Tarafder, K.; Gupta, D.; Noh, Y.-Y.; Mandal, S.
    Here, the development of transparent conductive zinc tin co-doped indium oxide (IZTO: In1.4Sn0.3Zn0.3O3) ternary electrodes is addressed through low temperature solution combustion processing. Optimization of fuel to oxidizer ratio offers low temperature (?130 °C) of combustion with balanced redox reaction. The thin films of IZTO annealed at different temperatures showed a decreasing trend in the resistivity with a fixed order of 10-2 ? cm and the film with a highest Hall mobility of 5.92 cm2 V-1 s-1 resulted at 400 °C. All the films with different temperatures of annealing were smooth (rms ? 2.42 nm) in nature and the IZTO film annealed at 200 °C is 83% transparent in the visible spectra. The effective band gap of 0.9 eV determined from first-principles density functional theory gives clear evidence for the conducting nature of IZTO. The thin film transistor fabricated with IZTO as a gate electrode with poly(methyl methacrylate) and pentacene as the dielectric and channel material, respectively, exhibited a saturation mobility of 0.44 cm2 V-1 s-1 and Ion/Ioff ratio of 103. Further, the printability of the IZTO combustible precursor is established which resulted in anti-edge deposition of the printed feature. © 2017 The Royal Society of Chemistry.
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    Effect of O2, N2 and H2 on annealing of pad printed high conductive Ag-Cu nano-alloy electrodes
    (Institute of Physics Publishing helen.craven@iop.org, 2018) Manjunath, G.; Anusha, P.; Salian, A.; Gupta, B.; Mandal, S.
    In this study, annealing of pad printed Ag-Cu based conducting ink was studied in oxidizing, inert and reducing atmosphere to verify its oxidation dependent conductivity. Ag-Cu manually was formulated adopting polyol method; where silver nitrate and copper nitrate serve as initial metal precursors. Polyvinylpyrrolidone (PVP), ethylene glycol and sodium borohydride act as a stabilizer, solvent and reducing agent respectively. The nanoalloys were with an average particle size ?48 ±15 nm, capped with polyvinylpyrrolidone to avoid agglomeration and stable in non-polar solvents. Formation of nanoalloy, Ag 90 wt%-Cu 10 wt%, was verified through a peak shift in UV-visible spectroscopy, found at 470 nm along with Nelson-Relay curve fitting and x-ray photoelectron spectroscopy study. The calculated lattice parameter of nanoalloy ?4.034 Å, was in between pure silver and copper. The crystallite size was calculated using Debye-Scherrer, Williamson-Hall isotropic strain model and Halder-Wagner method. Electrode patterns were printed on a glass substrate by pad printing and were annealed under O2, N2 and H2 atmosphere to study the oxidation kinetics of copper. A maximum conductivity of -6.6 ×;105 S m-1 was observed in inert atmosphere annealing as the conductivity is solely depends on the oxidation of copper; appears with uttermost Cu0 and least Cu2+ in x-ray photoelectron spectroscopy. High conductive space required between manually and dispersion ink can have a potential application as an electrode in printed electronics. Further refinement of size of the nanopaticles by polyol method could help to obtain the effect of quantum confinement. © 2018 IOP Publishing Ltd.
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    A balancing between super transparency and conductivity of solution combustion derived titanium doped indium oxide: Effect of charge carrier density and mobility
    (Elsevier B.V., 2018) Pujar, P.; Vardhan, R.V.; Gupta, D.; Mandal, S.
    In this contribution, super transparent (~100%) and conducting In14Ti1O23 (Titanium doped Indium oxide; InTiO) films were reported via solution combustion processing with acetylacetone as fuel. Both bulk-powder and thin film systems were studied and revealed the efficacy of low temperature combustion synthesis which yielded crystalline InTiO powder at 150 °C and its film counterpart had shown pronounced crystalinity with temperature. Also, all films with varying annealing temperature were smooth with rms value ranging from 0.29 nm to 1.9 nm. In addition, the charge carrier density in all films found to be of the order 1019 cm?3, possessing highest transparency nearly equals to uncoated glass at an annealing temperature of 350 °C having maximum of ~67% metal-oxygen-metal framework (or lattice oxygen) confirmed via X-ray photoelectron spectroscopy. Also, the highest conductivity of 20 S/cm at an annealing temperature of 450 °C clearly conveyed the potential of solution combustion processing in the fabrication of ultra-transparent InTiO films with no sophistication in the film fabrication. © 2018
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    Effect of annealing-temperature-assisted phase evolution on conductivity of solution combustion processed calcium vanadium oxide films
    (Springer, 2018) Manjunath, G.; Vardhan, R.V.; Salian, A.; Jagannatha, R.; Kedia, M.; Mandal, S.
    In thiswork, the effect of annealing temperature on the conductivity of solution-combustion-synthesized calcium vanadium oxide (CVO) films was studied. Conductivity was tailored by the appearance of the phases like CaVO3, CaV2O5 and Ca2V2O7 as a function of annealing temperature; CaVO3 and CaV2O5 are responsible for high conductivity, whereas V5+ presence in Ca2V2O7 contributes towards dielectric nature. Evolution of phases of CVO was identified through X-ray diffraction, Raman spectroscopy, Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. A detailed conductivity measurement as a function of annealing temperature helps us to identify the decreasing trend of conductivity with increasing temperature up to 400°C; beyond this it behaves like an insulator. There was a stable conductivity while aging the films in ambient for a few days. This study revealed safe application temperature domain of CVO, and a clear correlation of electrical conductivity with the in-depth structural-compositional-morphological study. © Indian Academy of Sciences.