Faculty Publications
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Item Low-temperature sonochemical synthesis of high dielectric Lanthanum doped Cerium oxide nanopowder(Elsevier Ltd, 2018) Kishor Kumar, M.J.; Kalathi, J.T.Lanthanum (La) doped Cerium Oxide (CeO2) nanopowder was synthesized at a relatively lower temperature (70°C), without calcination in a simple, faster, and efficient way through sonochemical method. X-ray diffraction (XRD) results confirmed the formation of a cubic fluorite structure of nanocrystalline CeO2 and lattice deformation due to La-doping in CeO2. TEM analysis revealed that the size of La-doped CeO2 particles is in the range of 20?50 nm. In addition, selective area electron diffraction (SAED) and high-resolution TEM (HRTEM) analyses portrayed the nano-crystallinity, lattice fringe pattern, and d-spacing details of La-doped CeO2 powder. Lanthanum doping in CeO2 was further confirmed by a shift in Raman band towards the lower frequency (from 464 cm?1 to 457cm?1) along with peak intensity increase. Photoluminescence (PL) emission spectra showed that emission intensity of the La-doped CeO2 at 510 nm is increased due to oxygen vacancy mediated charge transfer. All these results confirm the successful doping of La in CeO2. The La-doped CeO2 powder possesses a high dielectric constant (?r) of 106 and a low dielectric loss (tan ?) of < 0.4 % at 1 kHz. The La-doped CeO2 finds potential applications on developing devices in the field of a thin film capacitor, transistors, and solid oxide fuel cells. © 2018 Elsevier B.V.Item PMMA-LZO Composite Dielectric Film with an Improved Energy Storage Density(Springer New York LLC barbara.b.bertram@gsk.com, 2019) Kishor Kumar, M.J.; Kalathi, J.T.Energy storage materials in modern electronic devices and renewable energy systems are inevitable. The incorporation of inorganic fillers into the polymer matrix is a promising option for the advancement of storage materials with high energy density. The agglomeration of inorganic fillers in the polymer matrix and phase separation remain the main obstacles to efficient applications of the composites for energy storage. Here, the primary attention was given to achieve a uniform distribution of high-k LZO (Lanthanum Zirconium Oxide) filler into a PMMA (Polymethylmethacrylate) matrix to enhance the dielectric constant and energy storage density of PMMA while keeping dielectric loss at minimum. We prepared PMMA-LZO composite films with variable LZO content by ultrasound-assisted mixing followed by spin coating the solution on ITO (Indium tin oxide) coated glass. The effect of LZO content on dielectric properties of the LZO-PMMA films was studied. Dielectric constant (k) of PMMA was found to be increased from 3.1 to 15.3 at 15 vol.% LZO loading with a dielectric loss of 0.0582. However, 10 vol.% LZO loaded PMMA showed an improved dielectric constant of 13.4 while the dielectric loss remained the same as that of the neat PMMA. The LZO-PMMA films with 10 vol.% and 15 vol.% of LZO loading exhibited maximum energy density of 5.94 J cm?3 and 6.53 J cm?3, respectively. Overall, the 10 vol.% LZO loading was found to be optimum to achieve a stable film with improved dielectric properties. This work provides a viable approach for the development of flexible, high-energy density materials with a minimum dielectric loss. © 2019, The Minerals, Metals & Materials Society.Item High-Intensity Ultrasound-Assisted Low-Temperature Formulation of Lanthanum Zirconium Oxide Nanodispersion for Thin-Film Transistors(American Chemical Society service@acs.org, 2020) Pujar, P.; Madaravalli Jagadeeshkumar, K.K.; Naqi, M.; Gandla, S.; Cho, H.W.; Jung, S.H.; Cho, H.K.; Kalathi, J.T.; Kim, S.The process complexity, limited stability, and distinct synthesis and dispersion steps restrict the usage of multicomponent metal oxide nanodispersions in solution-processed electronics. Herein, sonochemistry is employed for the in situ synthesis and formulation of a colloidal nanodispersion of high-permittivity (?) multicomponent lanthanum zirconium oxide (LZO: La2Zr2O7). The continuous propagation of intense ultrasound waves in the aqueous medium allows the generation of oxidant species which, on reaction, form nanofragments of crystalline LZO at ?80 °C. Simultaneously, the presence of acidic byproducts in the vicinity promotes the formulation of a stable as-prepared LZO dispersion. The LZO thin film exhibits a ? of 16, and thin-film transistors (TFTs) based on LZO/indium gallium zinc oxide operate at low input voltages (?4 V), with the maximum mobility (?) and on/off ratio (Ion/Ioff) of 5.45 ± 0.06 cm2 V-1 s-1 and ?105, respectively. TFTs based on the compound dielectric LZO/Al2O3 present a marginal reduction in leakage current, along with enhancement in ? (6.16 ± 0.04 cm2 V-1 s-1) and Ion/Ioff (?105). Additionally, a 3 × 3 array of the proposed TFTs exhibits appreciable performance, with a ? of 3-6 cm2 V-1 s-1, a threshold voltage of -0.5 to 0.8 V, a subthreshold swing of 0.3-0.6 V dec-1, and an Ion/Ioff of 1-2.5 (×106). © © 2020 American Chemical Society.