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Item Design and fabrication of spectrally selective TiAlC/TiAlCN/TiAlSiCN/TiAlSiCO/TiAlSiO tandem absorber for higherature solar thermal power applications(Elsevier, 2015) Jyothi, J.; Chaliyawala, H.; Srinivas, G.; Nagaraja, H.S.; Barshilia, H.C.A new nanostructured TiAlC/TiAlCN/TiAlSiCN/TiAlSiCO/TiAlSiO tandem absorber has been designed for higherature solar thermal power applications. The first three layers in this tandem act as an absorbing layer, whereas, TiAlSiCO and TiAlSiO act as semi-transparent and anti-reflecting layers. The tandem absorber was deposited on stainless steel substrates using a four-cathode reactive direct current unbalanced magnetron sputtering system. The composition and thicknesses of the individual component layers have been optimized by adjusting the reactive flow rate of C2H2, N2, O2, and also Al, Ti and Si target power densities to achieve high absorptance (0.961) and low emittance (0.07 at 82 °C). The reflectance data showed that the absorptance increases gradually with shift of reflectance minimum to higher wavelengths from first layer to last layer (i.e., TiAlC to TiAlSiO). The thickness of optimized tandem absorber was calculated from the cross-sectional field-emission scanning electron microscopy images and confirmed using transmission electron microscopy. The performance evaluation of the tandem absorber has been evaluated by heating it in air and vacuum under cycling conditions at different temperatures. These results showed that the tandem absorber was stable up to 325 °C in air for 400 h and up to 650 °C in vacuum for 100 h, thus demonstrating its suitability for higherature solar thermal power generation applications. © 2015 Elsevier B.V. All rights reserved.Item Optimization of process parameters to achieve spectrally selective TiAlC/TiAlCN/TiAlSiCN/TiAlSiCO/TiAlSiO high temperature solar absorber coating(Elsevier Ltd, 2016) Jyothi, J.; Latha, S.; Bera, P.; Nagaraja, H.S.; Barshilia, H.C.TiAlC/TiAlCN/TiAlSiCN/TiAlSiCO/TiAlSiO tandem absorber was deposited on stainless steel substrate by using four cathode reactive direct current unbalanced magnetron sputtering system. The reactive gas flow rates (C2H2, N2 and O2) and thicknesses of each individual layers were varied to obtain the selective properties of the tandem absorber. The detailed effects of reactive gas flow rates and thicknesses of the individual layers on the optical properties were studied by using UV–vis–NIR spectrophotometer. Guiding factor in optimizing various process parameters was to achieve low reflectance in the solar spectrum region and high reflectance in the infrared region. The change in growth rate of the tandem absorber with reactive gas flow rate was studied using the thickness data, target voltage and target current. These results indicate a decrease in the growth rate of each individual layer of the tandem absorber with an increase in the flow rates of the reactive gases. The changes in bonding structure and chemical composition with reactive gas flow rates were studied by X-ray photoelectron spectroscopy. The optimized tandem absorber deposited on stainless steel substrate shows absorptance of 0.960 and emittance of 0.15. The thicknesses of the optimized individual layers were ?62, 18, 20, 16, 27 nm, respectively. © 2016 Elsevier LtdItem Optical properties of TiAlC/TiAlCN/TiAlSiCN/TiAlSiCO/TiAlSiO tandem absorber coatings by phase-modulated spectroscopic ellipsometry(Springer Verlag service@springer.de, 2017) Jyothi, J.; Biswas, A.; Sarkar, P.; Soum-Glaude, A.; Nagaraja, H.S.; Barshilia, H.C.TiAlC, TiAlCN, TiAlSiCN, TiAlSiCO, and TiAlSiO layers of thicknesses ~2.2 ?m, 755, 491, 393, and 431 nm, respectively, were deposited on stainless steel, silicon, and glass substrates to study their refractive indices and extinction coefficients using the phase-modulated spectroscopic ellipsometry in the wavelength range of 300–1200 nm. Absorption coefficient of each layer was calculated from the extinction coefficient of the layer. The results indicate that the first three layers (i.e., TiAlC, TiAlCN, and TiAlSiCN) are absorbing in nature, while TiAlSiCO and TiAlSiO act as intermediate and antireflection layers. Subsequently, a tandem absorber of TiAlC/TiAlCN/TiAlSiCN/TiAlSiCO/TiAlSiO with layer thicknesses of 62, 20, 18, 16, and 27 nm, respectively, was deposited on stainless steel substrates to fabricate a spectrally selective coating with absorptance of 0.961 and emittance of 0.15 at 82 °C. The obtained refractive indices and extinction coefficients of the tandem absorber were used to simulate the reflectance of the deposited tandem absorber using SCOUT software. Simulated reflectance data of the tandem absorber showed a good agreement with the experimental data measured by UV–Vis–NIR and FTIR spectrophotometry. The angular dependence of the selective properties of the tandem absorber was studied by measuring the reflectance spectra of the tandem absorber at different incident angles. © 2017, Springer-Verlag GmbH Germany.Item Measurement of high temperature emissivity and photothermal conversion efficiency of TiAlC/TiAlCN/TiAlSiCN/TiAlSiCO/TiAlSiO spectrally selective coating(Elsevier B.V., 2017) Jyothi, J.; Soum-Glaude, A.; Nagaraja, H.S.; Barshilia, H.C.A spectrally selective TiAlC/TiAlCN/TiAlSiCN/TiAlSiCO/TiAlSiO coating was deposited on stainless steel substrate by unbalanced magnetron sputtering system. Each individual layer of the tandem absorber was optimized by varying the reactive gas flow rates (C2H2, N2 and O2) and target power densities (Ti, Al and Si). The optimized tandem absorber shows a solar absorptance of 0.960 and an emittance of 0.15 at 82 °C, measured using solar spectrum reflectometer and emissometer, respectively. In order to study the optical properties of the deposited tandem absorber at high operating temperatures the reflectance spectra of the tandem absorber were measured at temperatures ranging from 80 °C to 500 °C by UV–Vis–NIR spectrophotometer and FTIR spectrometers. The reflectance spectra of the as-deposited sample and after high temperature reflectance measurements did not show any significant changes. The thermal emittance of the tandem absorber at high temperatures (80–500 °C) was studied in detail. At the temperature of 200 °C, 300 °C, 400 °C and 500 °C the tandem absorber shows the emittance of 0.152–0.157, 0.181–0.19, 0.214–0.246 and 0.251–0.275, respectively with an absorptance of ~0.930. These results show the good selectivity of the tandem absorber even at high operating temperatures (e.g., 500 °C) with a photothermal conversion efficiency of 88%, thus demonstrating that the tandem absorber is suitable for solar thermal power generation applications. Reflectance and roughness data of the absorber coating post annealing in air up to 600 °C for 2 h, carried out independently, corroborated the present results. © 2017 Elsevier B.V.