Faculty Publications
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Item A wideband, 25/40dBm high I/O power GaN HEMT ultra-low noise amplifier using even-odd mode techniques(Elsevier Ltd, 2022) Gupta, M.P.; Gorre, P.; Kumar, S.; Nulu, V.This paper presents a performance analysis of the low noise amplifier (LNA) for the first time using even-odd mode matching techniques in Gallium Nitride (GaN) HEMT Technology for marine communication. The proposed GaN LNA circuit consists of broadband stage I, main amplifier, and inverted broadband stage II, which provides a high input/output power, and ultra-low noise over wide bandwidth ranging from 0.5 GHz to 2.7 GHz with fractional impedance bandwidth of 138%. Broadband Stage I and Inverted broadband stage II are employed to provide input/output impedance matching transformation. The proposed LNA circuit with the incorporation of input/output broadband stages relax a 50Ω matching constraints and achieved high input and output power with good stability. The GaN HEMT LNA is analyzed and simulated using the RF simulator (ADS tool). The proposed GaN HEMT LNA is fabricated on RT Duroid substrate using Microwave Integrated Circuit (MIC) technology. The proposed LNA achieves a measured gain of 16 dB, while the simulated one is 17 dB with good insertion loss. An ultra-low noise figure of 0.6 dB flat is achieved over a wide bandwidth. In addition, the high output power is achieved 40dBm while input power is 25dBm which could overcome weak signal strength received by RF receiver for marine communication. A stability factor greater than one is achieved over a broad band ranging from 0.5 GHz to 2.7 GHz. The fabricated GaN HEMT LNA circuit has consumed power of 120 mW under a supply of 28 V. The area of the fabricated RF GaN HEMT LNA is 32 × 26 mm2. © 2022 Elsevier LtdItem A 0.15 μm GaN HEMT device to circuit approach towards dual-band ultra-low noise amplifier using defected ground bias technique(Elsevier GmbH, 2023) Gupta, M.P.; Kumar, S.; Elizabeth Caroline, B.; Song, H.; Kumar, V.; Gorre, P.This work presents a GaN HEMT device to circuit approach towards low noise amplifier (LNA) using defective ground bias (DGB) technique. This is the first MMIC GaN HEMT LNA design to offer dual-band of operation in both L and S-bands to the author's best knowledge. The proposed 0.15-μm GaN HEMT device fabrication achieves a high output power of 20 W using slot radiation phenomenon. The proposed DGB technique consists of gate and drain biasing topologies which achieves a dual-band of operation using microwave approach. The DGB technique is incorporated into GaN HEMT LNA which achieves high input and output power with good stability. To achieve an optimal noise, high I/O power, and almost flat gain at both L and S-bands, the defective ground structure of bias topologies is modeled and optimized. An artificial ground defect is created to offer resonant properties for the DGS of a microstrip line, which utilizes frequency-selective properties to improve the performance of the LNA circuit by suppressing the harmonics and scaling the size. The dedicated LNA shows the benefits of compact size, extremely low noise figure of 0.74/1.6 dB, high output power of 44 dBm and nearly flat gain of 14/11 dB at 1.17/2.49 GHz with the unique methodologies suggested. The compact GaN HEMT LNA could overcome the weak signal strength received by RF receiver for smart rail transport system. © 2023 Elsevier GmbHItem Performance Analysis of Novel Graphene Process Low-Noise Amplifier with Multi-stage Stagger-Tuned Approach over D-band(Springer, 2024) Nandini, P.; Naik, D.N.; Gorre, P.; Gupta, M.P.; Kumar, S.; Al-Shidaifat, A.; Song, H.This work reports an ultra-low noise, multi-stage stagger-tuned low-noise amplifier (MS-ST-LNA) over the D-band performance and achieves a best trade-off between noise, bandwidth, and gain parameters. The ultra-low-noise is achieved in three ways: First, the high-gain 3-stage stagger tuned amplifier (STA) realizes a 3X gain compared to the conventional single-stage amplifier, which sets a low floor noise. Second, the stagger-tuned amplifier achieves 1.6 times lower noise than the traditional single-stage amplifier. Finally, the stagger tune realizes a high-order transfer function, which mitigates the high-frequency noise. The full LNA is implemented and fabricated using a commercial nano-manufacturing 9-nm graphene film FET on a silicon wafer using a 0.065-?m commercial process, occupying an area of 0.21 mm2. The proposed design achieves an optimum performance: a maximum measured gain of 20.5 dB and a minimum noise figure (NF) of 4.2 dB over 123.7 to 162.5 GHz. The proposed LNA consumes ultra-low power consumption of 21.3 mW under the power supply of 1.2 V. © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2024.