Faculty Publications
Permanent URI for this communityhttps://idr.nitk.ac.in/handle/123456789/18736
Publications by NITK Faculty
Browse
4 results
Search Results
Item Sodium ion incorporated alumina - A versatile anisotropic ceramic(Elsevier Ltd, 2019) Pujar, P.; Gupta, B.; Sengupta, P.; Gupta, D.; Mandal, S.The present article is a review of crystal structure dependent anisotropic properties of β and β″-phases of sodium ion incorporated alumina. The anisotropy in electrical properties such as ionic conductivity and dielectric permittivity is due to the layered structure. Conducting plane between two consecutive spinel aluminas constituting loosely bound mobile sodium ions, promote ionic conductivity in the parallel direction. In contrary, the restricted movement of ions in the orthogonal direction brings about polarization giving it directional dielectric property. High ionic conductivity of 1.3 S/cm and large dielectric constant of ˜ 200 are reported. Exchanging sodium ions with different cations, such as potassium and lithium, results in similar anisotropy. The processing of β and β″-phases along with metastability of intermediate mullite phase is described in the current review. In addition, the applications of sodium ion incorporated aluminas, such as solid electrolyte in batteries, thin film transistors and gas sensors are discussed. © 2019 Elsevier LtdItem Retention of high dielectric constant sodium beta alumina via solution combustion: Role of aluminum ions complexation with fuel(Elsevier Ltd, 2018) Gupta, B.; Pujar, P.; Mal, S.S.; Gupta, D.; Mandal, S.In the present study, solution combustion technique has been explored to synthesize Sodium ?-alumina (SBA; NaAl11O17) powder and thin films. Three fuels namely urea, glycine and citric acid have been used to seek the feasibility of synthesizing crystalline SBA powder at low temperature. Also, the effect of nature of fuels used as well as calcination treatment on phase evolution and morphology of the as-combusted powder was investigated. Thermal analysis and X-ray diffraction studies suggest the formation of crystalline SBA powder at temperature as low as 259 °C, using urea in the combustion reaction whereas other fuels resulted in amorphous SBA phase and this variation in phase was found due to difference in exothermicity of the fuel used. Thermodynamic and spectroscopic analyses showed that the exothermicity of fuel depends on various factors like (i) standard heat of formation of fuel and (ii) the complexation offered by fuel to metal cations. Furthermore, sodium ?-alumina thin film capacitor (metal-insulator-metal) was also fabricated using urea via spray combustion synthesis. The sodium ?-alumina thin film showed a high dielectric value (?r) of ~21. © 2017 Elsevier Ltd and Techna Group S.r.l.Item High-performance low voltage operation of indium zinc tin oxide thin film transistors using chemically derived sodium ?-alumina dielectric(Springer, 2019) Pujar, P.; Gupta, D.; Mandal, S.We present high performance, low voltage (< 3 V) operation of thin film transistors (TFTs) with indium zinc tin oxide (IZTO: In4Sn4ZnO15)-semiconductor. The film of IZTO was fabricated via low-temperature (200 °C) solution combustion processing without incorporating an external fuel. As 2-methoxyethanol is a widely used organic solvent due to its high dissolution capability, serve the purpose of both the solvent and the fuel. On quantification from the balanced redox reaction, 0.3% of 2-methoxyethanol assisted for the action of fuel and helped in the formation of metal oxide, and the rest (99.7%) served the purpose of being dissolution medium. The balanced redox chemistry yielded a significant fraction of (56.5%) metal oxide at 200 °C confirmed via high-resolution oxygen 1 y spectrum. Further, the chemically derived thin film of sodium ss-alumina with a dielectric constant of ~ 21, while annealing at 350 °C incorporated in the TFT for the realization of low voltage operation. The performance assessment is systematically carried out both silicon dioxide (SiO2) and sodium ss-alumina and found that the TFTs with SiO2 and IZTO exhibited a saturation mobility (µ^), Ion/Ioff ratio and the threshold voltage (Vth) of 0.50 ± 0.02 cm2 V-1 s-1, 1.25 x 104 and 6.6 ± 0.79 V respectively. While changing the dielectric to sodium ss-alumina presented a µsat, Ion/Ioff ratio and Vth of 4.21 ± 0.18 cm2 V-1 s-1, 1.4 x 102 and 0.47 ± 0.08 V respectively. © Springer Science+Business Media, LLC, part of Springer Nature 2019.Item Low-temperature reducible particle-free screen-printable silver ink for the fabrication of high conductive electrodes(Springer New York LLC barbara.b.bertram@gsk.com, 2019) Manjunath, G.; Pujar, P.; Gupta, B.; Gupta, D.; Mandal, S.In this contribution, screen printing of aqueous based particle-free silver ink is addressed using combustion chemistry, where inks embody a redox mixture of silver nitrate and citric acid in the presence of a binder, sodium-carboxymethylcellulose. The exothermic reaction at ~ 176 °C results in the formation of pure silver. Screen-printing process is optimized for three different silver loadings (14%, 18% and 22%) in ink. In depth rheological study of the inks reveals thixotropic nature and the ink with 18% of silver possessing a viscosity of 328 Pa.s has a recovery rate of 84% at 110 s with a shear rate of 1 s?1. The deposited silver films (~ 3 µm thick) on both rigid-glass and flexible-polyamide substrates have shown an electrical conductivity of 4.2 × 106 S m?1 and 2.6 × 106 S m?1 respectively. Film adhesion on glass substrates categorized under 3B as per ASTM D-3359. Present screen-printed silver films find their application as a gate electrode in thin film transistors (TFTs). The TFTs comprising of indium zinc tin oxide–semiconductor and sodium ? -alumina dielectric with screen-printed silver as a gate electrode exhibited the saturation mobility, on:off ratio and threshold voltage of 0.88 cm2 V?1 s?1, 102 and ~ 0.3 V respectively. © 2019, Springer Science+Business Media, LLC, part of Springer Nature.