Faculty Publications

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Author: search.filters.author.Gorre, P.

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    Mm-wave cmos power amplifiers for 5g
    (Springer Science and Business Media Deutschland GmbH, 2021) Gorre, P.; Kumar, R.; Song, H.; Kumar, S.
    The chapter discusses the basic elements in the design of mm-wave CMOS Power Amplifier (PA) for phased arrays integration, focusing the next-generation 5G mobile communication. Power Amplifier design metrics, along with implementation of beam-forming phased arrays to merge power over-the-air are discussed in brief. The explanation begins with CMOS unique advantages, real-time handset challenges, system-level constraints, and design challenges are conceptually demonstrated with the help of a basic single-stage transistor Power Amplifier. © Springer Nature Singapore Pte Ltd. 2021.
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    A 28-32GHz CMOS LNA with broadband approach for 5G Mm-wave communication cells
    (Institute of Electrical and Electronics Engineers Inc., 2019) Vignesh, R.; Gorre, P.; Kumar, S.; Song, H.
    This paper first time reports a wideband low noise amplifier (LNA) with achievable minimum atmospheric absorption frequency band for 5G millimeter wave communication cells. A novel suspended substrate line based parallel-series network is optimized and analyzed that demonstrates a wideband response. The proposed LNA consists of two stage Cascode topology with incorporated parallel-series network and microwave components that provides broadband ranging from 28GHz to 32GHz. A full of two stage Cascode LNA overcoming the traditional mismatching constraints with consideration of suspended substrate lines (SSL) and Tee-junction in the proposed design. It is observed that suspended lines reduce parasitic and bulk effects of devices and enables LNA to provide broadband communication for 5G macro and micro cells. The proposed design is realized using RF 65nm Magna Hynix CMOS process with layout cell. The simulation results reveals that 28GHz-32GHz wide band with maximum forward gain of 25dB. The minimum noise figure of 2.5dB is achieved with optimization of passive components. The input impedance (real and imaginary) and smith chart realization for LNA provides satisfactory performance. © 2019 IEEE.
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    A Review of mm-Wave Power Amplifiers for Next-Generation 5G Communication
    (Springer, 2020) Gorre, P.; Vignesh, R.; Arya, R.; Kumar, S.
    In this paper, a review study of millimeter wave-based power amplifiers for 5G communication is presented. This literature mainly focuses on major component of the RF transceiver IC, i.e., power amplifier (PA). The upcoming 5G communication envisioned broadband modulation, high speed data rate, and new integration technologies which could overcome key challenges in the design of mobile devices and communication buildings. The power amplifiers in the 5G base station require high output powers (ranging from 2 to 10 W), high efficiency (up to 95%), and high gain (up to 40 dB). The basic building blocks, device technologies, architecture of RF power amplifiers, and parametric performances will be considered in this review. This study reviewed all device technologies (especially IV and III-V semiconductor technologies) for power amplifiers and found that a gallium nitride (GaN)-based PA is the best candidate to provide high output power, high efficiency, and high back-off power. In addition, various architectures of PAs have been reported while doherty power amplifier is one of best candidate for 5G base station. © 2020, Springer Nature Singapore Pte Ltd.
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    A 73% PAE, Highly Gain Inverse Class-F Power Amplifier for S-Band Applications
    (Springer Science and Business Media Deutschland GmbH, 2021) Naik, J.D.; Gorre, P.; Kumar, R.; Kumar, S.; Song, H.
    This paper proposes a continuous-mode inverse Class F power amplifier (PA) achieving wide bandwidth, high output power, and high efficiency. This work includes transmission line-based output/input matching networks and single-ended topology. The main focus of the work is to achieve a high gain with wide bandwidth. The proposed structure incorporates a termination of even and odd harmonics to deliver voltage and current waveform isolation with minimal matching network (MN) design complexities. The analyses simulated in Keysight Technologies Advanced Design System (ADS), which results in a wideband PA design. The results are quantified by using high power-added efficiency (PAE) and output power. PAE of 72.6% and output power more than 41 dBm obtained over wide bandwidth 2–4.2 GHz at −3 dB gain compression. The proposed PA could overcome the traditional performance and utilize for green communication. © 2021, Springer Nature Singapore Pte Ltd.
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    High Efficiency Broadband Mixed Mode Power Amplifier for Patient Monitoring
    (Institute of Electrical and Electronics Engineers Inc., 2021) Surve, V.; Kumar, S.; Gorre, P.
    In this paper, the wideband operation of mixed mode Class F power amplifier has been presented for biomedical application in patient monitoring. The proposed work involves a reactance compensation technique, which provides a 10 W output power for a frequency range of 0.3-2.4 GHz while achieving efficiency of 66.81-76.82% over 155.55% fractional bandwidth. The large signal gain ranging from 11~13 dB and output power greater than 40 dBm. The PAE ranges from 55 to 72%. Layout of proposed circuit is generated using Modelithics components to verify the circuit implementation. © 2021 IEEE.
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    A High-Sensitive High-Input Impedance CMOS Front-End Amplifier for Neural Spike Detection
    (Springer Science and Business Media Deutschland GmbH, 2023) Naik, J.D.; Gorre, P.; Al-Shidaifat, A.D.; Kumar, S.; Song, H.
    Neural spikes detection and monitoring for neuro-prosthetic applications require an efficient and robust front-end amplifier (FEA), which regulates the fidelity of the neural signal. This paper presents neutralization and bootstrapping techniques to overcome the input leakage currents produced by amplifiers of the input bias network. In addition, a pseudo-resistor technique ensures the FEA maintains a high-input impedance. The CMOS-based FEA architecture is executed in the advanced design system with the design kit of the CMOS process. The proposed design achieves a high-input impedance of 0.5 TΩ with a maximum simulation gain of 66.2 dB. The overall power consumption of the topology is observed as 2.6 µW with a power supply voltage of 0.9 V. The simulated noise performance of 6 nV/√Hz at 1 kHz demonstrates a high-sensitive design compared to the previous works. It is highly recommended for succeeding neuro-prosthetic applications. © 2023, The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd.
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    An Efficient Band CMOS LNA for Satellite-Based Remote Sensing Application
    (Springer Science and Business Media Deutschland GmbH, 2023) Roy, G.M.; Kumar, S.; Gorre, P.
    The paper demonstrates an efficient band CMOS LNA for satellite-based remote sensing application using 45 nm CMOS technology. The designed LNA comprises of a two stage cascode amplifier with shunt resistance feedback and dual inductive peaking (SRF-DIP) technique with source and gate inductive degeneration. The received band is 35.7 GHz that ranges from 61–96.7 GHz. The maximum power gain is 22.2 dB at resonant frequency of 74.7 GHz. The minimum noise figure is 1.25 dB at 60 GHz. The noise figure and power gains are calculated theoretically as well. The DC current Id is measured between 20–25 mA for the drain voltage of 0–1.2 V. © 2023, The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd.
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    A Wideband Microstrip Line-Based Balun Structure for High Power Amplifier Applications
    (Springer Science and Business Media Deutschland GmbH, 2023) Gupta, M.P.; Gorre, P.; Kumar, S.; Song, H.
    This paper proposes a balun matching technique to achieving a high output power and wide bandwidth. The proposed structure includes microstrip transmission line-based even and odd mode-matching circuits. A three-port unipolar microstrip line is designed to transform the balanced load termination to 50 Ω unbalanced port impedance. The proposed network design is based on real symmetrical four port network with open ended transmission line is inserted between the middle of the structure. To improve the isolation, transmission coefficient parameter and match the 50 Ω termination, a resistive network is inserted between the two balanced ports. The proposed structure is simulated in Keysight Technologies Advanced Design System (ADS), fabrication is done by using 0.51 mm RT Duriod substrate alignments. To verify the design concept, first of all, a wideband microstrip matching technique is designed and characterized at the frequency of L5 band (1.17 GHz). Then a prototype of microstrip transmission line-based wideband balun matching circuit is designed and fabricated. Analytical design equations have been derived for the even mode as well as odd mode techniques which satisfied the results. The proposed balun could overcome power loss mechanism over traditional transmission line structures and can utilize for high power application. © 2023, The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd.
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    High Efficiency Broadband Class F Power Amplifier for Sub-6-GHz 5G Application
    (Institute of Electrical and Electronics Engineers Inc., 2023) Manoj, H.; Prasad Gupta, M.S.; Deepak Naik, J.; Gorre, P.; Kumar, S.
    This paper presents a performance analysis of the high efficiency broadband Class F Power Amplifier using even-odd mode matching techniques in Gallium Nitride HEMT Technology for Sub-6-GHz 5G Application. The proposed design circuit consists of broadband input matching network which provides a wideband operation by canceling higher harmonics, high efficiency Class F main amplifier, and series shunt network to enhance the bandwidth. The proposed PA with built-in techniques achieves a fractional impedance bandwidth of 110% in frequency range 2 GHz to 5GHz. The GaN HEMT PA is analyzed and simulated using Keysight's Advanced Design System simulator. A maximum drain efficiency of 78.82% is achieved with a power gain ranging from 10~14 dBm. In addition, an output power > 40 dBm is achieved with the proposed design with drain voltage of 28 V. © 2023 IEEE.
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    Design of Power Combiner and Power Divider at Ku Frequency Band Applications
    (Institute of Electrical and Electronics Engineers Inc., 2023) Kumar, B.S.; Gorre, P.; Babu, B.R.; Samantaray, A.K.; Naik, D.N.; Kumar, S.
    This paper presents the design of a Ku band power combiner and divider, operating within the frequency range of 12 GHz to 16 GHz. The power combiner achieves S(1,1) values of -23.17 dB, -19.47 dB, and -20.97 dB at 13 GHz, 13.87 GHz, and 14.77 GHz and S(1,2) values of -11.012dB at 13.98 GHz and S(1,3) value of -12.470 dB at 14.01 GHz and S(2,2) values of - 37.028dB at 13.28GHz respectively. Meanwhile, the power divider achieves S(1,1) values of -40 dB and -33 dB at 12.8 GHz and 13.8GHz and S(1,2) values of -13.173 dB at 13.02GHz and S(1,3) values of -15.590 dB at 13.02GHz and S(2,2) value of -21.744dB at 12.98GHz and S(2,2) value of -17.567 dB at 14.98 GHz respectively. The substrate employed is a 1.6mm thick FR-4 material. © 2023 IEEE.