Faculty Publications
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Publications by NITK Faculty
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Item High-Performance Graphene FET Integrated Front-End Amplifier Using Pseudo-resistor Technique for Neuro-prosthetic Diagnosis(SpringerOpen, 2022) Naik, J.D.; Gorre, P.; Akuri, N.G.; Kumar, S.; Al-Shidaifat, A.D.; Song, H.A complex analysis of spike monitoring in neuro-prosthetic diagnosis demands a high-speed sub-nanoscale transistors with an advanced device technologies. This work reports the high performance of Graphene field-effect transistor (GFET) based front-end amplifier (FEA) design for the neuro-prosthetic application. The 9 nm Graphene FET device is optimized by characterization of transconductance and drain current towards high sensitivity and small factor. The proposed GFET-based FEA with pseudo-resistor technique demonstrates very high-input impedance in Tera-ohms that nullify the input leakage current. Here, gain-bandwidth product and noise optimization of GFET FEA enhances the overall gain with negligible noise. The proposed design operates at low voltage, further reduces the power consumption, and achieves less chip area in sub-nano size so it could be more suitable for implantable devices. The GFET-based FEA architecture achieves an action potential spike of 1.4 µV while the local field potentials spike of 1.8 mV. The proposed architecture is implemented in Advanced Design System using the design kit of the GFET process. Power consumption of 3.14 µW is observed with a supply voltage of 0.9 V. The simulated and experimental results of the proposed design achieve an input impedance of 2 TΩ with excellent noise performance over a wideband of 13.85 MHz. The proposed work demonstrates better neural activity sensing when compared to the state-of-the-artwork, which could be highly beneficial for future neuroscientists. © 2022, The Korean BioChip Society.Item A wideband, 25/40dBm high I/O power GaN HEMT ultra-low noise amplifier using even-odd mode techniques(Elsevier Ltd, 2022) Gupta, M.P.; Gorre, P.; Kumar, S.; Nulu, V.This paper presents a performance analysis of the low noise amplifier (LNA) for the first time using even-odd mode matching techniques in Gallium Nitride (GaN) HEMT Technology for marine communication. The proposed GaN LNA circuit consists of broadband stage I, main amplifier, and inverted broadband stage II, which provides a high input/output power, and ultra-low noise over wide bandwidth ranging from 0.5 GHz to 2.7 GHz with fractional impedance bandwidth of 138%. Broadband Stage I and Inverted broadband stage II are employed to provide input/output impedance matching transformation. The proposed LNA circuit with the incorporation of input/output broadband stages relax a 50Ω matching constraints and achieved high input and output power with good stability. The GaN HEMT LNA is analyzed and simulated using the RF simulator (ADS tool). The proposed GaN HEMT LNA is fabricated on RT Duroid substrate using Microwave Integrated Circuit (MIC) technology. The proposed LNA achieves a measured gain of 16 dB, while the simulated one is 17 dB with good insertion loss. An ultra-low noise figure of 0.6 dB flat is achieved over a wide bandwidth. In addition, the high output power is achieved 40dBm while input power is 25dBm which could overcome weak signal strength received by RF receiver for marine communication. A stability factor greater than one is achieved over a broad band ranging from 0.5 GHz to 2.7 GHz. The fabricated GaN HEMT LNA circuit has consumed power of 120 mW under a supply of 28 V. The area of the fabricated RF GaN HEMT LNA is 32 × 26 mm2. © 2022 Elsevier LtdItem A 2.71-pA/√Hz ultra-low noise, 70-dB dynamic range CMOS transimpedance amplifier with incorporated microstrip line techniques over extended bandwidth(John Wiley and Sons Ltd, 2023) Gorre, P.; Vignesh, R.; Kumar, S.; Song, H.; Roy, G.M.Recent advancements in the area of telemedicine have focused on remote patient monitoring services as a new frontier in medical applications. The present work reports a 65-nm complementary metal–oxide–semiconductor (CMOS)-based transimpedance amplifier (TIA) in an optical radar system for non-contact patient monitoring. A T-shaped microstrip line (MSL) integrated with variable gain common source TIA using MSL peaking technique and off-chip post-amplification integration is a newly proposed architecture to achieve a ultra-low noise, high dynamic range (DR) and high figure of merit over broadband than a traditional TIAs. First, the integrated T-shaped MSL develops an additional resonant frequency that resonates with a photodiode capacitance improving the bandwidth performance at higher Q values. Second, the shunt MSL peaking technique that introduces an additional conjugate pole-pair that cancels the effect of input capacitance helps to further improve the bandwidth of the TIA. Finally, an active feedback concept achieves a wide linear dynamic range enabling high TIA detectability. The proposed TIA realizes an impedance bandwidth of 770 MHz ranging from 7.12 to 7.89 GHz with a transimpedance gain of 105.1 dBΩ and ultra-low input-referred noise (IRN) density of 2.71 pA/√Hz. A high linear DR of 70 dB is achieved by employing a variable gain control scheme with a low group delay variation of 0.81 ns. The proposed work demonstrates a 1-Gb/s data rate while a bit-error rate less than 10−12 is achieved. The TIA consumes a power of 0.82 mW under the supply voltage of 1.2 V. © 2022 John Wiley & Sons Ltd.Item A new design approach of Rat-Race coupler based compact GaN HEMT power amplifier towards flat high efficiency over broadband(Elsevier GmbH, 2024) Gupta, M.P.; Kumar, S.; Naik Jatoth, D.; Gorre, P.; Song, H.This paper presents a high efficiency Rat-Race Coupler based compact GaN HEMT power amplifier (PA) design over broadband for high power transmitter in wireless communication. The rat-race coupler integrated PA Compact design is proposed for the first time as per author best knowledge. The design methodology used a higher order two open stubs and a rat-race coupler (RRC) at input/output sections to control harmonics impedances. The RRC is used to enhance the i/o power, and efficiency over broadband, which provides a good insertion loss, and consumes the least power and non-crucial impedance bandwidth for the normalized frequency band of interest. As a proof of concept, a PA is fabricated using a monolithic microwave integrated circuit (MMIC) 0.15 µm gallium nitride high electron mobility transistor (GaN HEMT) process. The measured result shows that the designed PA achieves a flat power added efficiency (PAE) of 65 % − 74 %, output power (Pout) of 44.8 dBm − 46 dBm, and drain efficiency (DE) of 72 % − 85 %, over a record wide frequency of 1.8 GHz − 3.6 GHz, which is the highest one among all reported harmonic tuned PAs. © 2024 Elsevier GmbH