Faculty Publications
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Item Unveiling the Potential of Bismuth Oxy-Iodide (BiOI)-Based Photovoltaic Device for Indoor Light Harvesting(Institute of Electrical and Electronics Engineers Inc., 2023) Manjhi, S.; Siddharth, G.; Pandey, S.K.; Sengar, B.S.; Dwivedi, P.; Garg, V.Indoor photovoltaics (IPVs) have piqued the interest of many because of their potential to power small and portable electronics and photonic devices. This work investigates one of the exemplary perovskite inspired materials (PIMs), bismuth oxy-iodide (BiOI). In order to explore the potential of BiOI in the indoor environment, the baseline model of BiOI device [indium tin oxide (ITO)/NiOx/BiOI/ZnO/Contact] is developed using the experimental results of a recent study with a power conversion efficiency (PCE) of 4%. The performance of the proposed device is fine-tuned by investigating the effect of: 1) absorber thickness and defect density and 2) valence band offset (VBO) between the hole transport layer (HTL) and absorber interface (NiOx/BiOI) along with the interface defect density. Furthermore, the series and shunt resistance of the device is optimized. Additionally, the performance of the optimized device is investigated under different WLED light intensities. Finally, after optimizing the device under WLED illumination, the best performance parameters achieved are Jsc : 1.83 mA/cm2, Voc : 1.33 V, FF: 85.91%, and PCE: 40%. Moreover, the optimized device performance under different indoor light sources: WLED, halogen, and compact fluorescent lamps (CFLs), has been performed to estimate the performance under widely utilized lighting sources. © 1963-2012 IEEE.Item Unveiling the Potential of Cs3Sb2ClxI9-x-Based Solar Cells for Efficient Indoor Light Harvesting: Numerical Simulation(John Wiley and Sons Inc, 2024) Manjhi, S.; Siddharth, G.; Pandey, S.K.; Sengar, B.S.; Garg, V.Lead-free Perovskite-inspired materials (PIM) have become the most promising candidate for indoor photovoltaics (IPV) because of their low toxicity and high performance. In this study, the potential of one of the lead-free PIMs, Cesium antimony chloride iodide (Cs3Sb2ClxI9-x), is explored for IPV devices. Recent experimental research work on a Cs3Sb2ClxI9-x− based solar cell with a power conversion efficiency (PCE) of 3.7% is considered for the baseline model development. The device performance is further optimized by investigating 1) absorber thickness and defect density, 2) band alignment of Electron Transport Layer (ETL)/Absorber, ETL Doping concentration and absorber/ETL interface defect density, 3) band alignment of Hole Transport Layer (HTL)/Absorber, HTL Doping concentration, and absorber/HTL interface defect density, 4) work function of metal contacts, 5) series and shunt resistances. After device optimization, the simulated device under 1000 lux WLED is able to achieve Jsc, Voc, FF, and PCE of 1.8 mA cm−2, 1.46 V, 89.3%, and 45.05%, respectively. Further, an evaluation of the performance of the optimized device under various indoor light sources, including White Light Emitting Diode (WLED), halogen, and Compact Fluorescent Lamp (CFL), is conducted in order to assess its performance under widely utilized lighting conditions. © 2024 Wiley-VCH GmbH.Item Comprehensive Modeling of High-Performance All-Inorganic Cs2TiBr6-Based Perovskite Solar Cells(John Wiley and Sons Inc, 2024) Kumar, S.; Thiyyakkandy, J.; Yadav, A.K.; Vinturaj, V.; Garg, V.; Prabhu, S.; Pandey, S.K.The perovskites are desirable materials for photovoltaic and other renewable green energy technologies. Lead-based perovskite solar cells (PSC) have recently gained considerable attention due to the abrupt rise in power conversion efficiency, but lead's well-known toxicity prevents its large-scale commercialization. One compelling option is Cs2TiBr6, which offers a nontoxic alternative. Herein, the electronic and optical characteristics of Cs2TiBr6 absorber material using density functional theory employing the WIEN2K tool are investigated. The energy band structure of Cs2TiBr6 shows an indirect bandgap of 2.2 eV. Additionally, optical properties are calculated, and the suitability of this material as an absorber for indoor and outdoor photovoltaic devices is investigated. The Cs2TiBr6 material has a peak absorption coefficient of 39.57 × 104 cm−1 and optical conductivity of 1.98 × 1015s−1, demonstrating its suitability as an absorber material. After that, a PSC is modeled using SCAPS-1D by using the computed parameters. The performance of the modeled perovskite is enhanced by optimization of various parameters, resulting in the achievement of a high-performance Cs2TiBr6-based PSC, boasting a power conversion efficiency of 19.9% for air mass AM1.5 G spectra and power conversion efficiency of 16.76% for light emitting diode and 17.18% for incandescent light for indoor light conditions. © 2024 Wiley-VCH GmbH.Item Insights into the potential of Sb alloyed Cu2AgBiI6-based solar cells: For efficient indoor energy-harvesting(Elsevier Ltd, 2025) Kumar, A.; Siddharth, G.; Dwivedi, P.; Pandey, S.K.; Sengar, B.S.; Garg, V.Recently, indoor photovoltaics have attracted significant attention due to their remarkable capability to generate power from indoor light sources. This work investigates the performance of perovskite-inspired material Sb alloyed Cu2AgBiI6 (CABI-Sb) based indoor photovoltaic device, which has shown a power conversion efficiency of 9.53 %, reported in a recent experimental study by B. Al-Anesi et al. The baseline model of the CABI-Sb device structure (FTO/TiO2/CABI-Sb/Spiro-OMeTAD/Au) is developed in SCAPS-1D using the earlier reported experimental data. Baseline model parameters under WLED illumination are Jsc: 128.2 µA/cm2, Voc: 0.51 V, FF: 66.57 %, and PCE: 9.53 %, with a minor deviation of less than 1 %, which validates the developed model with experimental data. The performance of the device is fine-tuned by optimizing 1) Absorber thickness and defect density 2) Electron Transport Layer (ETL) doping density, conduction band offset (CBO) and interface defect density between the ETL/absorber (TiO2 /CABI-Sb) interface, 3) Hole Transport Layer (HTL) doping density, valence band offset (VBO) and interface defect density between HTL/absorber (CABI-Sb/Spiro-OMeTAD) interface, 4) work function of contacts, and 5) Series and shunt resistance were optimized. The performance parameters of the optimized device under the WLED illumination are Jsc: 1.84 mA/cm2, Voc: 1.60 V, FF: 86.78 %, and PCE: 49.31 %. A remarkable improvement in PCE is achieved from 9.53 % to 49.31 %. Further, to validate the suitability of the optimized device under different indoor environments, optimized device performance is evaluated under different lux intensities of WLED (6500 K), WLED (2700 K), compact fluorescent light (CFL), and halogen. © 2024 International Solar Energy Society