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Author: search.filters.author.Fernandes, B.J.Subject: search.filters.subject.Scanning electron microscopy

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    Memory type switching behavior of ternary Ge20Te80-xSnx (0 x 4) chalcogenide compounds
    (Institute of Physics Publishing michael.roberts@iop.org, 2016) Fernandes, B.J.; Sridharan, K.; Pumlianmunga, P.; Ramesh, K.; Udayashankar, N.K.
    Chalcogenide compounds have gained huge research interest recently owing to their capability to transform from an amorphous to a crystalline phase with varying electrical properties. Such materials can be applied in building a new class of memories, such as phase-change memory and programmable metallization cells. Here we report the memory type electrical switching behavior of a ternary chalcogenide compound synthesized by doping Tin (Sn) in a germanium-telluride (Ge20Te80) host matrix, which yielded a composition of Ge20Te80-xSnx (0 x 4). Results indicate a remarkable decrease in the threshold switching voltage (V T) from 140 to 61 V when the Sn concentration was increased stepwise, which is attributed to the domination of the metallicity factor leading to reduced amorphous network connectivity and rigidity. Variation in the threshold switching voltage (V T) was noticed even when the sample thickness and temperature were altered, confirming that the memory switching process is of thermal origin. Investigations using x-ray diffraction (XRD) and scanning electron microscopy (SEM) revealed the formation of a crystalline channel that acts as the conduction path between the two electrodes in the switched region. Structural and morphological studies indicated that Sn metal remained as a micro inclusion in the matrix and hardly contributed to the rigid amorphous network formation in Ge20Te80-xSnx. Memory type electrical switching observed in these ternary chalcogenide compounds synthesized herein can be explored further for the fabrication of phase-change memory devices. © 2016 IOP Publishing Ltd.
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    Electrical switching in Si20Te80 ? xBix (0 ? x ? 3) chalcogenide glassy alloys
    (Elsevier B.V., 2018) Fernandes, B.J.; Ramesh, K.; Udayashankar, N.K.
    Chalcogenide glasses have attained enormous research interest due to their importance in finding electronic memories. Here we report electrical switching and thermal crystallization behavior of Si20Te80 ? xBix (0 ? x ? 3) glasses. We observe a significant decrease in the threshold voltage (VT) and the thermal stability (?T), indicating that in Si20Te80 ? xBix glasses, the resistivity of the additive element Bi plays a dominant role over network connectivity/rigidity. The variation of VT with respect to thickness and temperature of the sample indicates that the memory switching observed in Si20Te80 ? xBix glasses is influenced by the thermally induced transitions (thermal mechanism). Scanning electron microscopy (SEM) studies on pre-switched and post switched samples reveal the morphological changes on the surface of the sample, and serve as an experimental evidence for the formation of the crystalline filament between two electrodes during switching. Furthermore, the decrease in ?T values indicates that the Si-Te glasses become de-vitrifiable more easily with the addition of Bi, influencing the decrease of VT. Structural evaluation like thermal devitrification studies and morphological changes elucidate the restricted glass formability of the studied glass system. © 2018 Elsevier B.V.
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    Gamma irradiation effect on structural, optical and electrical properties of organometallic potassium hydrogen oxalate oxalic acid dihydrate single crystal
    (Springer New York LLC barbara.b.bertram@gsk.com, 2018) Mahendra, K.; Nayak, K.K.; Fernandes, B.J.; Udayashankar, N.K.
    Potassium oxalate oxalic acid dihydrate (KHO) single crystals were grown from solvent evaporation technique at room temperature. Crystals were optically characterized using UV–Vis and photoluminescence analysis. The gamma irradiation effects on KHO crystals were also studied optically and the results were analyzed to compare the effect of irradiation on the crystal lattice for different dosage. Structural variations were studied using powder XRD, FTIR and the results were examined to study the defect states created inside the lattice due to irradiation and the effect on the functional vibrations of the host crystal. Surface morphology of the crystal was studied using scanning electron microscope (SEM). Photo conductivity of the synthesized crystals were studied and analyzed to compare the photo response as well as the conductivity of the materials when subjected to irradiation. © 2018, Springer Science+Business Media, LLC, part of Springer Nature.