Faculty Publications
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Item Unveiling the Potential of Bismuth Oxy-Iodide (BiOI)-Based Photovoltaic Device for Indoor Light Harvesting(Institute of Electrical and Electronics Engineers Inc., 2023) Manjhi, S.; Siddharth, G.; Pandey, S.K.; Sengar, B.S.; Dwivedi, P.; Garg, V.Indoor photovoltaics (IPVs) have piqued the interest of many because of their potential to power small and portable electronics and photonic devices. This work investigates one of the exemplary perovskite inspired materials (PIMs), bismuth oxy-iodide (BiOI). In order to explore the potential of BiOI in the indoor environment, the baseline model of BiOI device [indium tin oxide (ITO)/NiOx/BiOI/ZnO/Contact] is developed using the experimental results of a recent study with a power conversion efficiency (PCE) of 4%. The performance of the proposed device is fine-tuned by investigating the effect of: 1) absorber thickness and defect density and 2) valence band offset (VBO) between the hole transport layer (HTL) and absorber interface (NiOx/BiOI) along with the interface defect density. Furthermore, the series and shunt resistance of the device is optimized. Additionally, the performance of the optimized device is investigated under different WLED light intensities. Finally, after optimizing the device under WLED illumination, the best performance parameters achieved are Jsc : 1.83 mA/cm2, Voc : 1.33 V, FF: 85.91%, and PCE: 40%. Moreover, the optimized device performance under different indoor light sources: WLED, halogen, and compact fluorescent lamps (CFLs), has been performed to estimate the performance under widely utilized lighting sources. © 1963-2012 IEEE.Item Performance assessment of pocket tunnel FET and accumulation mode FET for detection of streptavidin protein(Institute of Physics, 2023) Jadhav, A.; Yadav, S.; Pandey, S.K.; Garg, V.; Dwivedi, P.In this paper, Dielectrically Modulated (DM) pocket Tunnel Field Effect Transistor (TFET) and Accumulation Mode Field Effect Transistor (AMFET) biosensors are examined for the Sensitivity estimation of different thicknesses of biotarget (Streptavidin)/bioreceptor (Biotin)/silica binding protein (SBP or APTES) biomolecules with a fully filled and partially filled cavity. The sensitivity parameter is based on realistic process detection and is calculated as the ratio of biotarget to bioreceptor drain current for neutral and charged biomolecules. The effect on the sensitivity for a filled cavity is observed for: a) varying the thickness of streptavidin and Biotin for fixed SBP (APTES) thickness, b) varying the thickness of streptavidin and APTES for fixed biotin thickness, for both Pocket TFET and AMFET. The maximum sensitivity is observed in 4 nm thick streptavidin for the front gate voltage V fg: −3.8 V and V fg: −1.6 V for pocket TFET and AMFET, respectively. © 2023 IOP Publishing Ltd.Item Insights into the potential of Sb alloyed Cu2AgBiI6-based solar cells: For efficient indoor energy-harvesting(Elsevier Ltd, 2025) Kumar, A.; Siddharth, G.; Dwivedi, P.; Pandey, S.K.; Sengar, B.S.; Garg, V.Recently, indoor photovoltaics have attracted significant attention due to their remarkable capability to generate power from indoor light sources. This work investigates the performance of perovskite-inspired material Sb alloyed Cu2AgBiI6 (CABI-Sb) based indoor photovoltaic device, which has shown a power conversion efficiency of 9.53 %, reported in a recent experimental study by B. Al-Anesi et al. The baseline model of the CABI-Sb device structure (FTO/TiO2/CABI-Sb/Spiro-OMeTAD/Au) is developed in SCAPS-1D using the earlier reported experimental data. Baseline model parameters under WLED illumination are Jsc: 128.2 µA/cm2, Voc: 0.51 V, FF: 66.57 %, and PCE: 9.53 %, with a minor deviation of less than 1 %, which validates the developed model with experimental data. The performance of the device is fine-tuned by optimizing 1) Absorber thickness and defect density 2) Electron Transport Layer (ETL) doping density, conduction band offset (CBO) and interface defect density between the ETL/absorber (TiO2 /CABI-Sb) interface, 3) Hole Transport Layer (HTL) doping density, valence band offset (VBO) and interface defect density between HTL/absorber (CABI-Sb/Spiro-OMeTAD) interface, 4) work function of contacts, and 5) Series and shunt resistance were optimized. The performance parameters of the optimized device under the WLED illumination are Jsc: 1.84 mA/cm2, Voc: 1.60 V, FF: 86.78 %, and PCE: 49.31 %. A remarkable improvement in PCE is achieved from 9.53 % to 49.31 %. Further, to validate the suitability of the optimized device under different indoor environments, optimized device performance is evaluated under different lux intensities of WLED (6500 K), WLED (2700 K), compact fluorescent light (CFL), and halogen. © 2024 International Solar Energy Society