Faculty Publications

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    Investigation of CMOS Based Integration Approach Using DAI Technique for Next Generation Wireless Networks
    (Springer New York LLC barbara.b.bertram@gsk.com, 2019) Roy, G.M.; Kanuajia, B.K.; Dwari, S.; Kumar, S.; Song, H.
    This research work investigates a CMOS based low noise amplifier (LNA) using differential active inductor with eight-shaped patch antenna for next generation wireless communication. The proposed work conceded into three different phases. The first phase proposes LNA architecture which includes multistage cascode amplifier with a gate inductor gain peaking technique. The ground approach for this architecture employs active inductor technique that includes two stages of differential amplifier. The proposed novel technique leads to give incremental in inductance by using of common mode feedback resistor and lowers the undesirable parasitic resistance effect. Additionally, this technique offers gain enhanced noise cancellation and achieves a frequency band of around 5.7 GHz. The proposed architecture includes single stage differential AI and enhances the bandwidth up to 6.8 GHz with peak gain of 21 dB at 7.8 GHz. The noise figure and stability factor are achieved which is reasonably good at 1 dB. The proposed architecture is design and optimized on advanced design RF simulator using 0.045 µm CMOS process technology. While in second phase, a narrow band eight-shaped patch antenna is designed which provides operating band range from 5.8 to 6.5 GHz with 6.2 GHz resonating frequency. Highest peak gain of 15 dB and maximum radiation power of 42.5 dBm is succeed by proposed antenna. The final phase provides integration strategy of LNA with antenna and achieves desired gain of nearly 21 dB with minimum NF of 1.2–1.5 dB in the same band. © 2018, Springer Science+Business Media, LLC, part of Springer Nature.
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    Performance of ultra-wide band DCBLNA with suspended strip line radiator for human breast cancer diagnosis medical imaging application
    (Institution of Engineering and Technology, 2020) Roy, G.M.; Kumar Kanaujia, B.K.; Dwari, S.; Kumar, S.; Song, H.
    This study presents the performance of differential cascode balun low noise amplifier (DCBLNA) with ultra-wideband (UWB) for human breast cancer diagnosis. The proposed DCBLNA design-I with bulky spiral inductors achieves insufficient bandwidth with large power consumption of 10.8 mW. To attain the proper UWB band of operation, suspended strip line (SSLIN) radiators have employed in the proposed design-I. The performance of SSLIN is evaluated in terms of line capacitance and characteristic impedance by optimising its width. It is observed that best 50 ?n-II. DCBLNA design-II using SSLIN have achieving a desired band of operation ranging from 1.5 to 15.7 GHz and best NF of 0.5 dB. The gain and phase imperfections are simulated to characterise balun networks. The smallest gain imperfection achieved is 0.1 dB at 10 GHz while the simulated phase imperfection turns out to be sufficiently good with 2.35° at 8 GHz. The proposed DCBLNA design-II is implemented and fabricated using RFCMOS 45 nm Taiwan Semiconductor Manufacturing Company (TSMC) process under commercial conditions. The highest figure of merit comes out to be 3.2 that ensures good accuracy of medical imaging for breast cancer diagnosis. © The Institution of Engineering and Technology 2020.
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    Active feedback supported CMOS LNA blended with coplanar waveguide-fed antenna for Wi-Fi networks
    (John Wiley and Sons Inc, 2021) Roy, G.M.; Dwari, S.; Kumar Kanaujia, B.K.; Kumar, S.; Song, H.
    This study presents integration of complementary CMOS active feedback low noise amplifier with coplanar waveguide fed patch antenna for Wi-Fi networks. The LNA design-I, involves a cascode amplifier followed by active feedback common source amplifier offering wideband impedance matching with lowered parasitic losses. The inductor-less feedback mechanism is used to nullify noise effect with extended bandwidth in the range of 2.2 to 5.8 GHz and a peak forward gain of 22.5 dB. It is implemented on agilent's advance design system using 45 nm CMOS process. The noise figure (NF) is approximately 2 dB while the stability factors µ and µ prime are well above 1 dB with IIP3 of about 15 dBm. The chip area is 0.57 x 0.57 mm2 under dc power supply of 1V while power consumption of 0.8 mW. A CPW fed antenna design-II, achieves a wide band response similar to the bandwidth of LNA. The size of the fabricated antenna is calculated as 40 x 40 mm2. The peak gain is approximately 4.1 dBi at 3.9 GHz. The codesign-III, proposes a receiver achieving a much wider band of 1.6 to 6 GHz with a gain of 16.5 dB and NF of 2.59 dB at 2.06 GHz. The codesign improves the system integration by reducing overall chip area and offers saving in the effective cost. © 2021 The Authors. IET Microwaves, Antennas & Propagation published by John Wiley & Sons Ltd on behalf of The Institution of Engineering and Technology.