Faculty Publications
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Item Spin transport through metal-dichalcogenides layers: a study from first-principles calculations(IOP Publishing Ltd, 2020) Devaraj, N.; Tarafder, K.Spin transport through monolayer and trilayers of molybdenum dichalcogenides were studied considering Co as leads. Detailed investigations of the electronic structure of the Co/MoS2 interface and magnetic tri-junctions are carried out by using density functional theory calculations to understand transport behavior. The study revealed that new spin-polarized hybridized states appeared at the Fermi level due to the formation of Co/MoS2 interface that effectively acted as a spin filter and enhanced the spin injection efficiency of the systems. Spin-polarized current through the system as well as the magnetoresistance (MR) was estimated at different applied bias voltages. Large MR up to 78% was calculated for the trilayer MoS2 system at a relatively high applied bias voltage. The MR values are further improved by tuning the structure of the scattering region. A very large MR of 123% for MoS2/MoSe2/MoS2 trilayer at an applied bias 0.8 V was observed, which is much higher than the previously reported bias dependent MR values in similar systems. © 2020 IOP Publishing Ltd.Item Theoretical investigation of quantum capacitance in the functionalized MoS2-monolayer(IOP Publishing Ltd, 2021) Sruthi, T.; Devaraj, N.; Tarafder, K.In this work, we investigated the electronic structure and the quantum capacitance of a set of functionalized MoS2 monolayers. The functionalizations have been done by using different ad-atom adsorption on MoS2 monolayer. Density functional theory calculations are performed to obtain an accurate electronic structure of ad-atom doped MoS2 monolayer with a varying degree of doping concentration. Subsequently, the quantum capacitance in each functionalized system was estimated. A marked quantum capacitance above 200 ?F cm-2 has been observed. Our calculations show that the quantum capacitance of MoS2 monolayer is significantly enhanced with substitutional doping of Mo with transition metal ad-atoms. The microscopic origin of such enhancement in quantum capacitance in this system has been analyzed. Our DFT-based calculation reveals that the generation of new electronic states at the proximity of the band-edge and the shift of Fermi level caused by the ad-atom adsorption results in a very high quantum capacitance in the system. © 2021 Institute of Physics Publishing. All rights reserved.Item Spin-Transport through Van der Waals Heterojunctions Based on 2D-Ferromagnet and Transition Metal Dichalcogenides: A Study from First-Principles Calculations(John Wiley and Sons Inc, 2022) Devaraj, N.; Tarafder, K.Recently reported 2D ferromagnets show tremendous potential for their application in low-dimensional spintronic devices. Semiconductor heterostructure consisting of 2D ferromagnet integrated with other suitable 2D semiconducting materials may pave the way for designing robust and sophisticated spin-transport devices within a few nanometer scales. In this regard, a detailed understanding of the interface properties of 2D ferromagnetic materials and other 2D semiconductors is highly essential. Herein, the interface properties in the heterostructure made-up of CrX3 (X = Cl, Br, and I) monolayer and transition-metal dichalcogenides (TMDC; MoS2, MoSe2, and WS2) monolayer, using first-principle calculations are systematically studied. This study predicts that a robust spin-dependent barrier originated at the CrX3/TMDC interface. It can lead to a significantly large spin-filtering at the interface while spin-transport through this heterojunction, which will be highly beneficial for spintronic devices applications. Further, detailed spin-dependent transport studies carried out through Co/CrI3/TMDC/CrI3/Co magnetic heterojunctions and substantial tunnel magnetoresistance up to 590%, estimated for these systems. © 2022 Wiley-VCH GmbH.