Faculty Publications
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Item High Thermoelectric Performance of Co-Doped Tin Telluride Due to Synergistic Effect of Magnesium and Indium(American Chemical Society service@acs.org, 2017) Bhat, D.K.; Shenoy, U.S.Thermoelectric (TE) materials are considered go-to materials lately in addressing the worldwide energy crisis. We report a study on the effect of co-doping of magnesium and indium in lead-free SnTe both experimentally and theoretically. We show how the resonant levels introduced by indium increase the Seebeck coefficient at lower temperatures and how magnesium enhances the Seebeck at higher temperatures by opening the band gap and decreasing the energy difference between the light and heavy hole valence sub-bands. Synergistically, the effects of band engineering lead to the co-doped sample having high thermoelectric figure of merit (ZT) over a wide range of temperature and record a high power factor of ?42 ?W cm-1 K-2 for SnTe based materials. For the very first time we show the effect of site occupied by the dopant on the electronic structure of the material. The resulting high ZT of 1.5 at 840 K makes SnTe a very suitable material for thermoelectric applications. (Graph Presented). © 2017 American Chemical Society.Item Enhanced thermoelectric performance of bulk tin telluride: Synergistic effect of calcium and indium co-doping(Elsevier Ltd, 2018) Bhat, D.K.; Shenoy, S.SnTe based materials are considered recently as a lead-free replacement of the well-known PbTe based thermoelectric (TE) materials in addressing the energy crisis worldwide. Herein we report both experimental and theoretical study on the effect of co-doping of calcium and indium on electronic structure and TE properties of SnTe. We show that the resonant levels introduced by indium and band gap opening caused by calcium, valence band convergence induced by both calcium and indium, synergistically increases the Seebeck coefficient for a wide range of temperatures. The co-doped SnTe with a high ZT of ?1.65 at 840 K and record high power factor of ?47 ?Wcm?1K?2 for SnTe based materials make it a promising material for TE applications. © 2018 Elsevier LtdItem Enhanced thermoelectric properties of vanadium doped SrTiO3: A resonant dopant approach(Elsevier Ltd, 2020) Shenoy, U.S.; Bhat, D.K.Development of eco-friendly thermoelectric (TE) materials to tackle global energy crisis has become the need of the day. The goal is to either improve the properties of the existing materials or to look for new materials with better TE properties which are also nontoxic, abundant and stable. SrTiO3, a perovskite material has been gaining interest recently due to its unique and tunable electronic and crystal structure. Herein, we systematically study the effect of site occupancy of vanadium doping in SrTiO3 on the electronic structure and TE properties. First principles calculations reveal that doping of V in Sr lattice site introduces resonance levels and thereby causes distortion in density of states near the Fermi level. Transport property calculations predict V doped SrTiO3 to be a potential TE material. The study is a first report on introduction of resonance states by V in Sr site in SrTiO3 and provides new insights into the doping strategy in improving the TE properties of SrTiO3. © 2020 Elsevier B.V.Item Vanadium-doped BaTiO3 as high performance thermoelectric material: role of electronic structure engineering(Elsevier Ltd, 2020) Shenoy, U.S.; Bhat, D.K.It is well known that thermoelectric (TE) materials are the most sought-after ones to mitigate energy crisis. Development of an efficient non-toxic, economic, abundant, and stable TE material is quite difficult due to its complicated traits. BaTiO3, a perovskite material shows a tremendous potential as a TE material due to its highly tunable electronic structure. Herein, for the first time we report use of dopant to improve the Seebeck coefficient of BaTiO3. We used first-principles density functional theory calculations to study the effect of vanadium doping in BaTiO3, and for the first time, we report that V acts as a resonant dopant in BaTiO3. The study on effect of site occupancy reveals that V in Ba site distorts the density of states below the conduction band by introducing resonance level at the Fermi level. The transport property calculations based on Boltzmann's relation predicts V-doped BaTiO3 to be a potential TE material. The results also provide new insights into development of BaTiO3 as a multifunctional material. © 2020 Elsevier Ltd