Faculty Publications
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Item Investigation of third-order nonlinear optical properties of nanostructured Ni-doped CdS thin films under continuous wave laser illumination(Springer, 2019) Bairy, R.; Arasalike, A.; Shivakumar, G.K.; Radhakrishnan, K.; Bhat K, U.K.We report the third-order nonlinear optical (NLO) properties and optical limiting (OL) thresholds of pure CdS and Ni-doped CdS thin films have been investigated with the Z-scan technique under continuous wave laser excitation. Nanocrystalline CdS thin films with various doping concentrations of Ni (0%, 1%, 3%, 5% and 10 at. %) are prepared by spray-pyrolysis technique. XRD patterns reveal that all the prepared films are polycrystalline and the incorporation of Ni does not lead to major changes in the crystalline phase of Cd1-xNixS thin films. The surface morphology of the prepared films is impacted by the Ni-doping and is indicated by Field Emission Scanning Electron Microscopy (FESEM) images. With an increase in Ni-doping concentration, the energy band-gap value decreased from 2.48 eV to 2.23 eV. From the Z-scan data, it is observed that the material show strong two-photon absorption (2PA) and with an increase in Ni-doping concentrations from 0 to 10 at. %, the nonlinear absorption coefficient (?) are enhanced from 0.92 x 10-5 to 4.46 x 10-5 (cm W-1), nonlinear refractive index (n2) from 0.2967 x 10-9 to 0.1297 x 10-8 (cm2 W-1) and thereby the third-order NLO susceptibility (?(3)) values also increased from 1.7075 x 10-6 to 7.4743 x 10-6 (esu). OL characteristics of the prepared films are studied at the experimental wavelength. The results propose that the Cd1-xNixS film is a capable material for nonlinear optical devices at 532 nm and optical power limiting applications. © Springer Science+Business Media, LLC, part of Springer Nature 2019.Item Improvement of third-order NLO properties of vacuum deposited Cd1-xPbxS nanostructured thin films for optoelectronic device applications(Elsevier Ltd, 2023) Bairy, R.; Vijeth, H.; Kulkarni, S.D.; Murari, M.S.; Bhat K, U.K.A polycrystalline nanostructured cadmium lead sulfide thin film was deposited using the thermal evaporation (PVD) technique (Cd1-xPbxS with x = 0.00, 0.01, 0.05 and 0.1 wt.% of Pb). Structural parameters of as-prepared Cd1-xPbxS thin films have been studied through X-ray diffraction. The optical investigation demonstrates that Cd1-xPbxS film's optical band gap (Eg) may be adjusted from the visible to the near-infrared region. (2.64 - 2.42 eV). The film is substantially more appropriate for absorbing layers in solar cells and optoelectronic applications due to the large decrease in ‘Eg.’ The enhanced Pb doping was found to have altered the surface morphology, verified by Field Emission Scanning Electron Microscopy (FESEM) images. The doped films also showed a significant red shift in the band edge and increased transmittance in the visible and NIR regions. The third-order nonlinear optical (TONLO) parameters of the samples were determined from the Q-switched Nd: YAG laser with 65-ps pulse duration at 1064 nm. The investigated TONLO components such as nonlinear absorption coefficient (β), nonlinear refractive index (n2) and the susceptibility χ(3)were found to be in the range from 1.16 × 10−3 to 4.12 × 10−3 (cmW−1), 1.06 × 10−8 to 3.32 × 10−8 (cm2 W−1) and 1.23 × 10−4 to 5.62 × 10−4 (esu) respectively. The results indicate that Pb-doping on CdS nanostructures on surface morphology can be used to modify NLO characteristics.Cd1-xPbxS thin film is a potential and able material for optoelectronic device applications, as seen by these encouraging NLO results. © 2023 Elsevier Ltd