Journal Articles
Permanent URI for this collectionhttps://idr.nitk.ac.in/handle/123456789/19884
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Item A 0.3?V, 56?dB DR, 100?Hz fourth order low-pass filter for ECG acquisition system(Elsevier Ltd, 2019) Polineni, S.; Hanumantha Rao, G.; Rekha, S.; Bhat, M.S.This paper proposes an extremely low voltage, low power bulk-driven voltage follower (BD-VF). As an application of the proposed BD-VF, a 4th order low-pass filter (LPF) with cutoff frequency adjustable from 50 Hz to 250 Hz is designed for electrocardiogram (ECG) acquisition systems. The filter is implemented in UMC 180 nm CMOS technology occupying only 0.03 mm2 area. Post layout simulation results show that the filter offers 56 dB dynamic range even with an extremely low supply voltage of 0.3 V. The total power consumption of the filter is 4.8 nW for a cutoff frequency of 100 Hz. The Figure-of-merit (FoM) and capacitance/pole of the filter are 5.7 × 10?15 and 2.2 pF respectively. The proposed filter offers the lowest FoM compared to the state-of-the-art nW-class filters. © 2019 Elsevier LtdItem A 0.8-V, 55.1-dB DR, 100 Hz Low-Pass Filter with Low-Power PTAT for Bio-Medical Applications(Taylor and Francis Ltd., 2022) Hanumantha Rao, G.; Rekha, S.This paper presents a power efficient transconductor-capacitor ((Formula presented.)) filter for front-end processing of bio-medical signals. A low voltage, low-power transconductor with improved output resistance is proposed. It offers a transconductance ((Formula presented.)) of 5.85 nS while operating at a supply voltage ((Formula presented.)) of 0.8 V. Furthermore, a low-power Proportional to Absolute Temperature (PTAT) current reference circuit is designed to bias the transconductor and to make (Formula presented.) independent of temperature. It follows PTAT characteristics in the temperature range of ?20 (Formula presented.) C to 70 (Formula presented.) C and is less sensitive to (Formula presented.) variations. A second-order Butterworth low-pass filter (LPF) with a cutoff frequency of 100 Hz is implemented to validate the proposed transconductor and the PTAT circuit. The filter is designed in UMC 65 nm CMOS process and it takes an area of 0.065 mm (Formula presented.). While consuming a power of 47 nW, it offers a dynamic range (DR) of 55.1 dB. Figure-of-merit (FoM) of the filter is as low as (Formula presented.) J, which is found to be on par with the filters reported in the literature. © 2022 IETE.
