Journal Articles
Permanent URI for this collectionhttps://idr.nitk.ac.in/handle/123456789/19884
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Item DFT Study about the Effect of Doping on the Properties of GaSb Material and Designing of High-Efficiency Infrared Photodetector(John Wiley and Sons Inc, 2023) Bhandari, B.; Yadav, A.K.; Singh, R.; Kiran, G.; Singh, A.K.; Garg, V.; Pandey, S.K.The gallium antimonide (GaSb) material has very attractive electronic and optoelectronic properties which are suitable for next-generation infrared (IR) photodetector applications. In this work, properties of undoped GaSb material such as density of states, bandstructure, electron density, absorption coefficient, dielectric function, refractive index, and extinction coefficient are calculated using density-functional theory (DFT). Moreover, the effects of doping with Ge, Sn, and Zn elements on these properties of GaSb material are investigated. It is found that undoped GaSb material exhibits a direct gap of ≈0.72 eV. Among different doping elements, Ge-doped GaSb produces a very significant enhancement in optical properties. The Ge-doped GaSb demonstrates a four times higher absorption coefficient in comparison to undoped GaSb in the IR region at 0.8 eV photon energy. GaSb-based photodetector device is designed using the Solar Cell Capacitance Simulator (SCAPS) 1D tool. The efficiency of the designed photodetector with optimum thicknesses and doping of different layers is found to be improved from 21.34% to 25.91% after incorporating the absorption data set obtained from the DFT calculations. Additionally, the photodetector with optimum parameters demonstrates maximum responsivity of value ≈0.31 A W−1. In the previous findings, it is demonstrated that GaSb is a very suitable material for next-generation IR photodetector applications. © 2023 Wiley-VCH GmbH.Item Unveiling the Potential of Cs3Sb2ClxI9-x-Based Solar Cells for Efficient Indoor Light Harvesting: Numerical Simulation(John Wiley and Sons Inc, 2024) Manjhi, S.; Siddharth, G.; Pandey, S.K.; Sengar, B.S.; Garg, V.Lead-free Perovskite-inspired materials (PIM) have become the most promising candidate for indoor photovoltaics (IPV) because of their low toxicity and high performance. In this study, the potential of one of the lead-free PIMs, Cesium antimony chloride iodide (Cs3Sb2ClxI9-x), is explored for IPV devices. Recent experimental research work on a Cs3Sb2ClxI9-x− based solar cell with a power conversion efficiency (PCE) of 3.7% is considered for the baseline model development. The device performance is further optimized by investigating 1) absorber thickness and defect density, 2) band alignment of Electron Transport Layer (ETL)/Absorber, ETL Doping concentration and absorber/ETL interface defect density, 3) band alignment of Hole Transport Layer (HTL)/Absorber, HTL Doping concentration, and absorber/HTL interface defect density, 4) work function of metal contacts, 5) series and shunt resistances. After device optimization, the simulated device under 1000 lux WLED is able to achieve Jsc, Voc, FF, and PCE of 1.8 mA cm−2, 1.46 V, 89.3%, and 45.05%, respectively. Further, an evaluation of the performance of the optimized device under various indoor light sources, including White Light Emitting Diode (WLED), halogen, and Compact Fluorescent Lamp (CFL), is conducted in order to assess its performance under widely utilized lighting conditions. © 2024 Wiley-VCH GmbH.Item Insights into the potential of Sb alloyed Cu2AgBiI6-based solar cells: For efficient indoor energy-harvesting(Elsevier Ltd, 2025) Kumar, A.; Siddharth, G.; Dwivedi, P.; Pandey, S.K.; Sengar, B.S.; Garg, V.Recently, indoor photovoltaics have attracted significant attention due to their remarkable capability to generate power from indoor light sources. This work investigates the performance of perovskite-inspired material Sb alloyed Cu2AgBiI6 (CABI-Sb) based indoor photovoltaic device, which has shown a power conversion efficiency of 9.53 %, reported in a recent experimental study by B. Al-Anesi et al. The baseline model of the CABI-Sb device structure (FTO/TiO2/CABI-Sb/Spiro-OMeTAD/Au) is developed in SCAPS-1D using the earlier reported experimental data. Baseline model parameters under WLED illumination are Jsc: 128.2 µA/cm2, Voc: 0.51 V, FF: 66.57 %, and PCE: 9.53 %, with a minor deviation of less than 1 %, which validates the developed model with experimental data. The performance of the device is fine-tuned by optimizing 1) Absorber thickness and defect density 2) Electron Transport Layer (ETL) doping density, conduction band offset (CBO) and interface defect density between the ETL/absorber (TiO2 /CABI-Sb) interface, 3) Hole Transport Layer (HTL) doping density, valence band offset (VBO) and interface defect density between HTL/absorber (CABI-Sb/Spiro-OMeTAD) interface, 4) work function of contacts, and 5) Series and shunt resistance were optimized. The performance parameters of the optimized device under the WLED illumination are Jsc: 1.84 mA/cm2, Voc: 1.60 V, FF: 86.78 %, and PCE: 49.31 %. A remarkable improvement in PCE is achieved from 9.53 % to 49.31 %. Further, to validate the suitability of the optimized device under different indoor environments, optimized device performance is evaluated under different lux intensities of WLED (6500 K), WLED (2700 K), compact fluorescent light (CFL), and halogen. © 2024 International Solar Energy Society