Journal Articles
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Item Resonance levels in GeTe thermoelectrics: Zinc as a new multifaceted dopant(Royal Society of Chemistry, 2020) Bhat, D.K.; Shenoy, U.S.Recently doping has been widely used in enhancing the thermoelectric properties of lead-free GeTe. But much of the work has been concentrated on carrier concentration tuning or phonon scattering. Until now, only indium has been reported to be the best resonant dopant in cubic GeTe. Herein, for the first time we introduce zinc as a resonant dopant to the cubic GeTe family. We show that zinc in GeTe not only introduces resonance states but also increases the band gap and raises the heavy hole valence band above the light hole valence band leading to enhanced Seebeck values. This multifunctional dopant incorporation in GeTe leads to enhanced transport properties as predicted by Boltzmann transport properties calculations based on first principles density functional theory electronic structure calculations. This journal is © The Royal Society of Chemistry and the Centre National de la Recherche Scientifique.Item Complementary effect of co-doping aliovalent elements Bi and Sb in self-compensated SnTe-based thermoelectric materials(Royal Society of Chemistry, 2021) Kihoi, S.K.; Shenoy, U.S.; Bhat, D.K.; Lee, H.S.Research on Pb-free thermoelectric materials as a potential eco-friendly and solid-state source of energy has continuously advanced over time, with SnTe-based materials having shown utmost promising properties owing to their tunable electronic structure and scalable thermal conductivity. In this study, we self-compensate Sn to reduce inherent Sn vacancies, and further tune the carrier concentration by doping with Bi. Sb is further alloyed to incorporate nanostructures that significantly reduce the thermal conductivity. Multiple aliovalent dopants result in a continually decreased carrier concentration and subsequent significantly decreased electrical conductivity. The Seebeck values are seen to increase with temperature, where a maximum value of ?171 ?V K?1is reported with a maximum power factor of ?22.7 ?W cm?1K?2. We show through first principles DFT calculations the synergistic effect of Bi and Sb to introduce resonance states and an additional valence band convergence effect with increasing Sb that contribute to improved electronic properties. A decreased phonon frequency with co-doping is also reported. A maximumZTof ?0.8 at 823 K is reported in the Sn0.90Bi0.03Sb0.10Te composition, showing good potential in Sb co-doped SnTe-based materials. © The Royal Society of Chemistry 2021.Item Probing of Bi doped GeTe thermoelectrics leads to revelation of resonant states(Elsevier Ltd, 2022) Shenoy, U.S.; D, G.K.; Bhat, D.K.Quest for lead free high performance mid temperature thermoelectric materials has led to extensive research on SnTe and GeTe based materials. Among various strategies implemented to improve the transport properties of GeTe, electronic structure engineering holds a prominent place. Herein, we reinvestigate the impact of substitutional doping of Bi in GeTe on its electronic structure in both rhombohedral and cubic phase. We uncover that Bi introduces resonance levels in GeTe acting as a first n-type resonant dopant in both rhombohedral and cubic phases. We also report for the first time that Bi resonance states undergo Rashba splitting in low temperature rhombohedral phase. Bi doping acts in a multifunctional way by tuning the carrier concentration, causing conduction band convergence and phonon scattering in addition to improving the band effective mass by distorting the density of states near the Fermi level to enhance the thermoelectric performance of the material. The convergence of L, Z and Σ valence bands in rhombohedral phase due to Bi doping leads to manifestation of Rashba effect in p-type material which was not reported till date. Thus, we propose that the chemical potential tuning can result in p-type as well as n-type Bi doped GeTe for thermoelectric application. © 2022 Elsevier B.V.Item Asymmetric Thermoelectric Performance Tuning in Low-Cost ZrFexNi1-xSb Double Half-Heusler Materials(American Chemical Society, 2023) Kahiu, J.N.; Kihoi, S.K.; Kim, H.; Shenoy, U.S.; Bhat, D.K.; Lee, H.S.The new paradigm for increasing the commercial viability of thermoelectric materials in the energy sector is the theoretical prediction and subsequent experimental validation and optimization of cheaper and inherently more efficient compositions. Herein, the experimental validation of the recently theoretically predicted ZrFe0.50Ni0.50Sb double half-Heusler and the ability to intrinsically tune this system to optimized p- or n-type materials by varying the Fe/Ni ratio in the synthesized ZrFexNi1-xSb (x = 0.35-0.65) samples are demonstrated. The samples are synthesized by arc melting, hot pressing, and annealing. Subsequent microstructural analysis confirms the crystallization of the ZrFexNi1-xSb into the half-Heusler structure and reveals that the variation of the Fe/Ni ratio favors the Ni-rich side. Consequently, the best p-type x = 0.55 and n-type x = 0.35 samples exhibit higher power factor values stemming from an increased carrier concentration, higher density of state effective mass, and suppressed bipolar conduction, as indicated by the Hall data analysis and density functional theory simulations. The additional lattice disorders introduced by varying the Fe/Ni ratio suppress the thermal conductivity and increase the microhardness of the n-type samples. The ZrFe0.35Ni0.65Sb and ZrFe0.55Ni0.45Sb samples achieve maximum zTs of ∼0.43 and 0.06, respectively, which is a great improvement over the ∼0.001 value of the ZrFe0.50Ni0.50Sb sample. These results highlight the viability of tuning the performance of double half-Heuslers on the doubly doped site. They will be instrumental in demonstrating the feasibility of developing low-cost double half-Heusler materials with better intrinsic and highly tunable properties. © 2023 American Chemical Society.Item Enhanced Electrical, Thermal, and Mechanical Properties of SnTe through Equimolar Multication Alloying for Suitable Device Applications(American Chemical Society, 2024) Kihoi, S.K.; Shenoy, U.S.; Kim, H.; Kahiu, J.N.; Kim, C.M.; Park, K.-I.; Bhat, D.K.; Lee, H.S.With the ever-growing demand for eco-friendly energy sources to mitigate the global rising temperatures, the universal insatiable need for sustainable and efficient energy sources are earnestly being intensively sought after. The ubiquitous heat within, if successfully tapped, is an utterly promising source of energy. To achieve this, a thermoelectric device (TED) is needed. To enhance the conversion efficiency from heat to useful electrical power, we developed a strategy to improve the thermoelectric performance of the materials involved. In this work, equimolar multication alloying (EMMCA) is proposed for the first time and employed to enhance the performance of SnTe-based thermoelectric materials. Beyond the cation’s solubility limit, in situ compositing is observed with an increasing doping ratio, whereby distinct CuInTe2 ternary second phases are dispersed within the SnTe matrix. The electronic properties of the ensuing alloy are significantly enhanced by the resulting carrier concentration modulation and the unique electronic band engineering. A decrease in the thermal transport properties is likewise reported, benefiting from enhanced phonon scattering and diminished electronic contribution. The mechanical properties are also shown to increase with increased alloying. As a result, single-leg TED performance shows substantial output power in comparison with the pristine sample. The outcomes stemming from EMMCA are documented as significantly impactful, contributing to superior overall thermoelectric performance. © 2024 American Chemical Society.