Browsing by Author "Vasudeva Reddy, K."

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    A 280?W high gain inductively degenerated LNA for medical radio communication
    (Serials Publications serialspublications@vsnl.net, 2016) Vasudeva Reddy, K.; Girija Sravani, K.; Prashantha Kumar, H.
    An ultra-low power, high gain inductively degenerated common source (IDCS) LNA for medical radio (MedRadio) communications in the frequency band of 401-406 MHz is implemented using 0.18-?m technology. An upsurge LNA is designed for biomedical applications with an emphasis on the covenant between gain, noise and power consumption. The IDCS LNA operates in subthreshold region which extremely reduces the power consumption and relaxes the voltage headroom without screwing the LNA performance. The relaxed voltage headroom concedes current-reuse technique to implement single to differential (SD) LNA or to stack mixer on top of LNA. The proposed LNA achieves power gain (S21) of 21 dB, S11 & S22 are much less than -10 dB, NF of 2.1 dB and P1dB of -18 dBm while consuming 280 ?A current from a 1-V supply voltage. The overall pre and post layout simulations of proposed LNA shows acceptable agreement with theoretical predictions. The layout occupying 0.587 mm2. The gain enhancement and reduction in power has been optimized compared with previous works implies that LNA obtains the highest figure of merit. © 2016 International Science Press.
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    Inductor-less PVT robust gain switching balun LNA for multistandard applications
    (Taylor and Francis Ltd. michael.wagreich@univie.ac.at, 2019) Vasudeva Reddy, K.; Prashantha Kumar, H.
    An inductor-less single to differential low-noise amplifier (LNA) is proposed for multistandard applications in the frequency band of 0.2–2 GHz. The proposed LNA incorporates noise cancellation and voltage shunt feedback configuration to achieve minimum noise characteristics and low power consumption. In addition to noise cancellation, trans-conductance of common-source stage is scaled to improve the noise performance. In this way, noise figure (NF) of LNA below 3 dB is achieved. An additional capacitor C c is used to correct the gain and phase imbalance at the output. The gain switching has been enabled with a step size of 4 dB for high linearity and power efficiency. The bias point of all transistors is chosen such that the variation in g m is not more than 10%. The proposed LNA is implemented in UMC 0.18-?m RF CMOS technology. The core area is 182 ?m × 181 ?m. Moreover, the LNA has better ratio of relevant performance to area. The proposed balun LNA is validated by rigorous Monte Carlo simulation. The 3? deviation of gain and NF is less than 5%. Finally, the proposed LNA is robust to unavoidable PVT variations. © 2019, © 2019 Informa UK Limited, trading as Taylor & Francis Group.
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    Low power ultra wide-band balun LNA using noise cancellation and current-reuse techniques
    (Elsevier Ltd, 2017) Vasudeva Reddy, K.; Girija Sravani, K.; Prashantha Kumar, P.
    A low power, single to differential (balun) low noise amplifier (LNA) using noise cancellation and current re-use techniques is presented for ultra wide-band applications. An upsurge balun LNA is designed using UMC 0.18-?m RF CMOS technology with an emphasis on the covenant between gain, bandwidth and power dissipation. The proposed balun exerts a differential stage on top of common gate-common source (CG-CS) stage. A CG-CS stage exploits amalgamation of CG stage (for wide-band impedance matching) and CS to curtail gain and phase imbalance, while simultaneously negating the noise and distortion of input matching transistor. The escalation of bandwidth has been accomplished using staggered tuning on CG-CS and differential stages. The stacked differential amplifier does cancellation of self noise as well as supply noise. The proposed UWB balun LNA achieves 14 dB voltage gain with agreeable input reverse isolation (S11) of <-8dB over the frequency range of 3.19–8.8 GHz. The minimum noise figure of 3.9 dB and P1dB of ?10.5 dBm while exhausting 3.8 mW from 1.2 V supply. The superlative performance of balun LNA is accomplished between 3.19 and 8.8 GHz with gain and phase errors below 0.2 dB and 0.40 respectively. The layout occupying 0.77 mm2 area. The overall pre and post layout simulations of proposed LNA shows admissible agreement with theoretical predictions. © 2017 Elsevier Ltd