Browsing by Author "Usman, M."

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Micro-Nano Fabrication of Self-Aligned Silicon Electron Field Emitter Arrays Using Pulsed KrF Laser Irradiation
(2020) Shamim, M.Z.M.; Persheyev, S.; Zaidi, M.; Usman, M.; Shiblee, M.; Ali, S.J.; Rahman, M.R.
Self-aligned silicon micro-nano structured electron field emitter arrays were fabricated using pulsed krypton fluoride (KrF) excimer laser crystallization (ELC) of hydrogenated amorphous thin silicon films (a-Si:H) on metal coated backplane samples. We investigate the effect of laser processing parameters on the growth of micro-nano conical structures on the surface of the thin silicon films. Randomly oriented conical structures as high as 1 m were fabricated using laser pulse frequency of 100 Hz and sample stage scanning speed of 0.25 mm/sec. Best field emission (FE) results were measured from samples with the highest surface features with FE currents in the order of 10?6 A and low turn-on emission threshold of ?14 V/ m. Light emission from the prototype demonstrators was tested using bespoke driver electronics and planar anodes coated with indium tin-oxide (ITO) and medium voltage FE phosphors, to exemplify their usage for future flat panel display technologies. 2019, 2019 Taylor & Francis Group, LLC.
Micro-Nano Fabrication of Self-Aligned Silicon Electron Field Emitter Arrays Using Pulsed KrF Laser Irradiation
(Taylor and Francis Ltd. michael.wagreich@univie.ac.at, 2020) Shamim, M.Z.M.; Persheyev, S.; Zaidi, M.; Usman, M.; Shiblee, M.; Ali, S.J.; Rahman, M.R.
Self-aligned silicon micro-nano structured electron field emitter arrays were fabricated using pulsed krypton fluoride (KrF) excimer laser crystallization (ELC) of hydrogenated amorphous thin silicon films (a-Si:H) on metal coated backplane samples. We investigate the effect of laser processing parameters on the growth of micro-nano conical structures on the surface of the thin silicon films. Randomly oriented conical structures as high as 1 µm were fabricated using laser pulse frequency of 100 Hz and sample stage scanning speed of 0.25 mm/sec. Best field emission (FE) results were measured from samples with the highest surface features with FE currents in the order of 10?6 A and low turn-on emission threshold of ?14 V/µm. Light emission from the prototype demonstrators was tested using bespoke driver electronics and planar anodes coated with indium tin-oxide (ITO) and medium voltage FE phosphors, to exemplify their usage for future flat panel display technologies. © 2019, © 2019 Taylor & Francis Group, LLC.
Synthesis of Lithography Free Micro-Nano Electron Field Emitters Using Pulsed KrF Laser Assisted Metal Induced Crystallization of Thin Silicon Films
(2020) Shamim, M.Z.M.; Persheyev, S.; Zaidi, M.; Usman, M.; Shiblee, M.; Ali, S.J.; Rahman, M.R.
Hydrogenated amorphous thin silicon films (a-Si:H) deposited on metal coated glass substrates were investigated to analyze the effect of a novel processing technique called Laser Assisted Metal Induced Crystallization (LAMIC) on their electron field emission (FE) properties. Post-surface characterization of the processed films showed increased surface roughness and the presence of uniformly spaced island-like micro-nano structures on the surface of metal coated backplane samples. Best FE results were obtained from samples sputtered with a thin layer of Aluminum (Al) on top and cross laser annealed at 190 mJ/cm2 (y-axis) and 100 mJ/cm2 (x-axis). FE measurements indicate a low turn-on electric field of less than 16 V/ m with emission currents in the order of 10?6 A. FE results were found to be particularly dependent on the laser fluence and the surface morphology exhibited very high discharge resistance. Oxidation of the films was observed to deteriorate their FE characteristics, thereby increasing the emission threshold to 36 V/ m. Diode configured field emission display prototypes are fabricated to exemplify their potential as cold cathode emitters. 2019, 2019 Taylor & Francis Group, LLC.
Synthesis of Lithography Free Micro-Nano Electron Field Emitters Using Pulsed KrF Laser Assisted Metal Induced Crystallization of Thin Silicon Films
(Taylor and Francis Ltd. michael.wagreich@univie.ac.at, 2020) Shamim, M.Z.M.; Persheyev, S.; Zaidi, M.; Usman, M.; Shiblee, M.; Ali, S.J.; Rahman, M.R.
Hydrogenated amorphous thin silicon films (a-Si:H) deposited on metal coated glass substrates were investigated to analyze the effect of a novel processing technique called Laser Assisted Metal Induced Crystallization (LAMIC) on their electron field emission (FE) properties. Post-surface characterization of the processed films showed increased surface roughness and the presence of uniformly spaced “island-like” micro-nano structures on the surface of metal coated backplane samples. Best FE results were obtained from samples sputtered with a thin layer of Aluminum (Al) on top and cross laser annealed at 190 mJ/cm2 (y-axis) and 100 mJ/cm2 (x-axis). FE measurements indicate a low turn-on electric field of less than 16 V/µm with emission currents in the order of 10?6 A. FE results were found to be particularly dependent on the laser fluence and the surface morphology exhibited very high discharge resistance. Oxidation of the films was observed to deteriorate their FE characteristics, thereby increasing the emission threshold to 36 V/µm. Diode configured field emission display prototypes are fabricated to exemplify their potential as cold cathode emitters. © 2019, © 2019 Taylor & Francis Group, LLC.