Browsing by Author "Shenoy, A."

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Indium Antimonide-Based All-Dielectric Metasurface Absorber at Terahertz Frequency for Refractive Index Sensing Applications
(Institute of Electrical and Electronics Engineers Inc., 2024) Thomas, S.K.; Shenoy, A.; Satyanarayan, M.N.
In this article, we present an indium antimonide (InSb)-based metasurface absorber (MA) using a complementary ring structure. The proposed MA exhibits absorption characteristics in the terahertz frequency range spanning from 1.0 to 2.2 THz. Within this frequency range, the MA demonstrates dual-band tunability, achieving approximately 100% absorption. Geometric parameters such as the outer ring radii, ring width, and InSb layer thickness are systematically adjusted to fine-tune the absorption frequency of the MA. In addition, we explore the refractive index sensing capabilities by introducing different refractive index materials into the air-filled complementary ring cavity. Notably, we achieve a peak refractive index sensitivity of 555 GHz per refractive index unit (RIU) for the first absorption peak at a minimum radius of 60 µm. © 2001-2012 IEEE.
Optimization of Platinum dioxide properties by plasma oxidation of sputtered PtOx
(2019) Basu, N.; N.S., S.; Mamidala, S.R.; Shenoy, A.; Bhat, N.
We have previously used reactively sputtered Platinum oxide thin film as DNA sensing element. In this work, we subject the reactively sputtered Platinum oxide thin films to an additional RIE step for 3, 6 and 9 min and carry out a detailed comparative study of the material and electrical properties of these films. XRD and XPS analysis revealed that when the reactively sputtered Platinum oxide film was subjected to RIE step for longer periods of time, it became progressively ?-PtO2 in nature. Activation energies of 0.24 eV, 0.26 eV, 0.29 eV and 0.31 eV were obtained for the as deposited film and the films subjected to RIE step for 3, 6 and 9 min respectively. The Hall mobility of the as deposited Platinum oxide film was found to be 32.15 cm2V?1s?1 at room temperature. However, when the as deposited film was subjected to RIE step for 9 min the mobility value rises to as high as 136.13 cm2V?1s?1 at room temperature. 2019 Acta Materialia Inc.
Optimization of Platinum dioxide properties by plasma oxidation of sputtered PtOx
(Elsevier B.V., 2019) Basu, N.; N.s, S.; Mamidala, S.R.; Shenoy, A.; Bhat, N.
We have previously used reactively sputtered Platinum oxide thin film as DNA sensing element. In this work, we subject the reactively sputtered Platinum oxide thin films to an additional RIE step for 3, 6 and 9 min and carry out a detailed comparative study of the material and electrical properties of these films. XRD and XPS analysis revealed that when the reactively sputtered Platinum oxide film was subjected to RIE step for longer periods of time, it became progressively ?-PtO2 in nature. Activation energies of 0.24 eV, 0.26 eV, 0.29 eV and 0.31 eV were obtained for the as deposited film and the films subjected to RIE step for 3, 6 and 9 min respectively. The Hall mobility of the as deposited Platinum oxide film was found to be 32.15 cm2V?1s?1 at room temperature. However, when the as deposited film was subjected to RIE step for 9 min the mobility value rises to as high as 136.13 cm2V?1s?1 at room temperature. © 2019 Acta Materialia Inc.