Browsing by Author "Ramakrishnan, R.K."
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Item Integrated optics-based quantum communication devices(2017) Ramakrishnan, R.K.; Samad, S.A.; Archana, K.; Yadunath, T.R.; Das, P.P.; Talabattula, S.Quantum communication or more specifically quantum information processing is considered as the future of information science and technology. In this paper we propose a scheme to implement quantum communication at the device level using integrated optics. We implement the quantum communication protocol BB84, in a waveguide based circuit using integrated optics. We also propose a high dimensional quantum key distribution method implementation using integrated optics. In the earlier one polarized photons are used as the carriers of quantum information, while in second one electromagnetic modes in the waveguide are used to carry quantum information. The high dimensional quantum communication method is used to increase the information content of protocol thus increasing on the data rates. This is done by encoding into a larger state space. We have used electromagnetic modes for encoding since the polarization method is not efficient to carry information in a larger state space. � 2017 SPIE.Item Integrated optics-based quantum communication devices(SPIE spie@spie.org, 2017) Ramakrishnan, R.K.; Samad, S.A.; Archana, K.; Yadunath, T.R.; Das, P.P.; Srinivas, T.Quantum communication or more specifically quantum information processing is considered as the future of information science and technology. In this paper we propose a scheme to implement quantum communication at the device level using integrated optics. We implement the quantum communication protocol BB84, in a waveguide based circuit using integrated optics. We also propose a high dimensional quantum key distribution method implementation using integrated optics. In the earlier one polarized photons are used as the carriers of quantum information, while in second one electromagnetic modes in the waveguide are used to carry quantum information. The high dimensional quantum communication method is used to increase the information content of protocol thus increasing on the data rates. This is done by encoding into a larger state space. We have used electromagnetic modes for encoding since the polarization method is not efficient to carry information in a larger state space. © 2017 SPIE.Item Photonic crystal ring resonator: A promising device for a multitude applications(2017) Yadunath, T.R.; Kumar, R.R.; Sreenivasulu, T.; Kandoth, A.; John, K.; Ramakrishnan, R.K.; Das, P.P.; Badrinarayana, T.; Mohan, S.; Hegde, G.; Srinivas, T.In this paper a 2D Photonic Crystal array in SOI platform having hexagonal periodicity with a ring defect incorporated along with two bus waveguides is conceptualized and realized for various applications of optical communication, sensing etc. The ring structure filters out a resonant wavelength from the spectrum carried to it through the line defect where the resonated peak is determined by the effective ring radius. The hexagonal architecture enables more coupling length than an ideal ring structure which helps in better intensity accumulation. The resonant peak exhibited at 1554nm in simulation, which is observed in the optical characterization at 1543nm. This is attributed to the fabrication tolerance. � 2017 SPIE.Item Photonic crystal ring resonator: A promising device for a multitude applications(SPIE spie@spie.org, 2017) Yadunath, T.R.; Kumar, R.R.; Tupakula, T.; Kandoth, A.; John, K.; Ramakrishnan, R.K.; Das, P.P.; Badrinarayana, T.; Mohan, S.; Hegde, G.M.; Srinivas, T.In this paper a 2D Photonic Crystal array in SOI platform having hexagonal periodicity with a ring defect incorporated along with two bus waveguides is conceptualized and realized for various applications of optical communication, sensing etc. The ring structure filters out a resonant wavelength from the spectrum carried to it through the line defect where the resonated peak is determined by the effective ring radius. The hexagonal architecture enables more coupling length than an ideal ring structure which helps in better intensity accumulation. The resonant peak exhibited at 1554nm in simulation, which is observed in the optical characterization at 1543nm. This is attributed to the fabrication tolerance. © 2017 SPIE.