Browsing by Author "Punetha, D."

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    Design and fabrication of all-inorganic transport materials-based Cs2SnI6 perovskite solar cells
    (Springer, 2023) Kumari, D.; Jaiswal, N.; Shukla, R.; Punetha, D.; Pandey, S.K.; Pandey, S.K.
    With lead-based perovskite materials, lead content and long-term stability are the big concerns. Recently, Cesium tin iodide (Cs2SnI6) double perovskite has gained recognition as a stable and environment-friendly photovoltaic material compared to lead-based perovskite materials. In the present study, we have investigated Cs2SnI6 based solar cell with all inorganic transport materials using SCAPS-1D. The optimized device exhibited a maximum efficiency of about 18%. Further we fabricated Cs2SnI6 perovskite films using a solution process approach, utilizing CsI and SnI4 in a 2:1 ratio. For synthesized double perovskite film, the crystallinity, morphologies, and optical characteristics were examined. Additionally, the stability analysis confirmed that the prepared perovskite films were stable for more than two months under ambient exposure. Finally, utilizing the synthesized Cs2SnI6 thin films as an absorber material, we fabricated two solar cells without and with hole transport layer (HTL), having configurations of glass/FTO/ZnO/Cs2SnI6/Ni and glass/FTO/ZnO/Cs2SnI6/ MoS2/Ni, respectively, in the ambient conditions. As a major finding, it has been observed that the inclusion of MoS2 as HTL improved overall performance, with an enhancement in the power conversion efficiency (PCE) of nearly 45% compared to the device without HTL. © 2023, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.
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    Improvement in Performance of InAs Surface Quantum Dot Heterostructure-Based H2S Gas Sensor by Introducing Buried Quantum Dot Layer
    (Institute of Electrical and Electronics Engineers Inc., 2023) Mantri, M.R.; Panda, D.P.; Punetha, D.; Pandey, S.K.; Singh, V.P.; Pandey, S.K.; Chakrabarti, S.
    In this work, we have demonstrated InAs surface quantum dot (SQD)-based H2S gas sensors. The epitaxial growth of the strain-coupled and uncoupled InAs/GaAs QD heterostructures is done using the solid-source molecular beam epitaxy (MBE) tool. For both types of heterostructures, the coverage of the InAs monolayer (ML) for the SQD layer varies from 0.9 to 2 ML. The ML coverage of the buried quantum dots (BQDs) layer for the coupled heterostructures is kept constant (2.7 ML). The atomic force microscopy (AFM) results demonstrated that the coupled heterostructures have higher quantum dot (QD) density in the SQDs layer in comparison to the uncoupled one due to strain propagation from the BQDs toward the SQD layer. The sensor fabricated using the coupled heterostructure with 2 ML SQDs has demonstrated better performance than the uncoupled one for various concentrations (1-1000 ppm) of hydrogen sulfide (H 2S) gas due to inter-dot carrier tunneling between BQDs and SQDs layer. The coupled InAs gas sensor showed the best sensing properties at room temperature (45.9% sensor response at 100 ppm H2S ). We have demonstrated the selectivity of the sensor toward H 2S among various target gases like CO, CO2 , N2O , and NO 2 and the stability over a longer period of time with only 3% deviation (within acceptable limit). These findings have the potential to promote the fabrication of high-performance gas sensors using SQDs-based coupled heterostructures. © 2001-2012 IEEE.