Browsing by Author "Palimar, S."

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Backward dynamics, Inverse limit Theory and p-adic integers
(2010) Palimar, S.; Shankar, B.R.
The concept of Backward dynamics and Inverse limit Theory is discussed. The natural arithmetic structure for these dynamics is given as ?p, the ring of p-adic integers. In particular we study the backward dynamics of the logistic map in p-adic metric.
Conductive and transparent undoped ZnO thin films prepared by thermal evaporation method
(2012) Palimar, S.; Shivakumar, G.K.; Bangera, K.V.
Zinc Oxide thin films were obtained by thermal evaporation method. The films were then subjected to detailed structural, optical and electrical studies. The analysis has showed that the obtained films have a transmittance of up to 95% in the visible region of the electromagnetic spectrum with a room temperature conductivity of around 92 ?-1cm-1. A detailed analysis of the result is reported. � 2012 American Institute of Physics.
Conductive and transparent undoped ZnO thin films prepared by thermal evaporation method
(2012) Palimar, S.; Shivakumar, G.K.; Bangera, K.V.
Zinc Oxide thin films were obtained by thermal evaporation method. The films were then subjected to detailed structural, optical and electrical studies. The analysis has showed that the obtained films have a transmittance of up to 95% in the visible region of the electromagnetic spectrum with a room temperature conductivity of around 92 Î©-1cm-1. A detailed analysis of the result is reported. Â© 2012 American Institute of Physics.
Highly conducting and transparent Ga2O3 doped ZnO thin films prepared by thermal evaporation method
(2012) Palimar, S.; Bangera, K.V.; Shivakumar, G.K.
Amorphous zinc oxide thin films are obtained by thermally evaporating pure zinc oxide powder. Films obtained have an excellent conductivity of 90 ?-1 cm-1 with transparency of up to 90% in the visible region. On doping with gallium oxide a great improvement in the conductivity of up to 8. 7 × 103 ?-1 cm-1 is observed and the optical band gap of the films is decreased from 3. 25 to 3. 2 eV, retaining the transparency. Measurements of activation energy show that the doped ZnO film has one donor level at 68 meV and other at 26 meV bellow the conduction band. © 2012 Pleiades Publishing, Ltd.
Influence of doping with third group oxides on properties of zinc oxide thin films
(2013) Palimar, S.; Bangera, K.V.; Shivakumar, G.K.
The study of modifications in structural, optical and electrical properties of vacuum evaporated zinc oxide thin films on doping with III group oxides namely aluminum oxide, gallium oxide and indium oxide are reported. It was observed that all the films have transmittance ranging from 85 to 95%. The variation in optical properties with dopants is discussed. On doping the film with III group oxides, the conductivity of the films showed an excellent improvement of the order of 103 ?-1 cm-1. The measurements of activation energy showed that all three oxide doped films have 2 donor levels below the conduction band. © 2013 Pleiades Publishing, Ltd.
Mersenne primes in real quadratic fields
(2012) Palimar, S.; Shankar, B.R.
The concept of Mersenne primes is studied in real quadratic fields with class number one. Computational results are given. The field ?(?2) is studied in detail with a focus on representing Mersenne primes in the form x2 + 7y2. It is also proved that x is divisible by 8 and y ? ±3 (mod 8), generalizing a result of F. Lemmermeyer, first proved by H. W. Lenstra and P. Stevenhagen using Artin's reciprocity law.
Study of the aluminium oxide doped zinc oxide thin films prepared by thermal evaporation technique
(2012) Palimar, S.; Banger, K.V.; Shivakumar, G.K.
The present study reports the observations made on investigations carried out to study structural, optical and electrical properties of aluminium oxide doped ZnO thin films obtained by thermal evaporation technique. Films obtained are found to be amorphous in nature with smooth and continuous surface. Room temperature conductivity of the film is found to be 5x10 3 U -1 cm -1 with visible region transmittance of above 95%. The optical energy gap of the film is found to be 3.25 eV. From the calculations of activation energy, it is observed that the doped ZnO film has two donor levels, one at 142 meV and other at 43 meV. A detailed analysis of the result is reported. © 2012 Asian Network for Scientific Information.
Study of the doping of thermally evaporated zinc oxide thin films with indium and indium oxide
(Springer Nature, 2013) Palimar, S.; Bangera, K.V.; Shivakumar, G.K.
The present paper reports observations made on investigations carried out to study structural, optical and electrical properties of thermally evaporated ZnO thin films and their modulations on doping with metallic indium and indium oxide separately. ZnO thin film in the undoped state is found to have a very good conductivity of 90 ?–1 cm–1 with an excellent transmittance of up to 90 % in the visible region. After doping with metallic indium, the conductivity of the film is found to be 580 ?–1 cm–1, whereas the conductivity of indium oxide-doped films is increased up to 3.5 × 103 ?–1 cm–1. Further, the optical band gap of the ZnO thin film is widened from 3.26 to 3.3 eV when doped with indium oxide and with metallic indium it decreases to 3.2 eV. There is no considerable change in the transmittance of the films after doping. All undoped and doped films were amorphous in nature with smooth and flat surface without significant modifications due to doping. © 2012, The Author(s).