Browsing by Author "Nithin, N."

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    Impact of the diaphragm structure on the linearity and temperature sensitivity of low-pressure piezo-resistive MEMS pressure sensors
    (Institute of Physics Publishing helen.craven@iop.org, 2020) Nithin, N.; Rao, R.; Bhat, K.N.
    This paper presents result of a detailed simulation study aimed at optimizing the different diaphragm structures of silicon micro machined MEMS pressure sensor for operation and measurement of the low-pressure ranges(600mbar). We first show that the conventional arrangement of the Wheatstone bridge resistors realized using the "Flat diaphragms" give rise to large temperature dependence of the offset voltage which affects the sensitivity and linearity of the pressure sensors during operation in the temperatures ranging from-40Cto+80C, thus making the temperature compensation of the sensor output voltage rather tedious and impossible in certain instances. We further demonstrate that, this issue can be circumvented and excellent linearity with minimum dependence of the offset-voltage, sensitivity and linearity can be achieved by using "sculptured diaphragms" with optimized diaphragm dimensions. Towards this goal, in this paper, we present a set of simulation studies involving optimization of the pressure sensor diaphragm dimensions and structures with single and multiple boss structures to achieve better sensitivity, linearity, and at the same time minimize temperature drift, and to achieve better repeatability. © Published under licence by IOP Publishing Ltd.
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    Investigations on the Effect of Spacer Dielectrics on the DC Characteristics of Dual Material Gate Junctionless FinFETs
    (Institute of Electrical and Electronics Engineers Inc., 2020) Mathew, S.; Nithin, N.; Rao, R.
    This work analyses the influence of dielectric constant of spacer on the electrical characteristics as well as on two vital short channel effect parameters i.e DIBL and Subthreshold Swing of Dual Material Gate Junctionless FinFET (DMG-JLFinFET). Various spacer materials each with different dielectric constant, were used for 3D TCAD simulations. It was observed that high κ spacers gave higher value of ON current. Increase in leakage current was also observed for high κ spacers at higher negative gate bias. Subthreshold Swing (SS) as well as Drain Induced Barrier Lowering (DIBL) had reduced extensively with the increase in dielectric constant of spacer. © 2020 IEEE.