Browsing by Author "Kanuajia, B.K."

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A high efficiency on-chip reconfigurable Doherty power amplifier for LTE communication cells
(John Wiley and Sons Inc. P.O.Box 18667 Newark NJ 07191-8667, 2018) Kumar, R.; Kanuajia, B.K.; Dwari, S.; Kumar, S.; Song, H.
In this paper, a high efficiency on-chip reconfigurable Doherty power amplifier (DPA) with proposed topology is proposed for LTE or 4G communication cells. The proposed DPA consists of input driver topology, hybrid coupler, asymmetric amplifiers, and 1:1 balun filtered network. The proposed input driver circuit provides wide amplified signal operation within range of 2.3GHz to 6GHz with flat gain of 33 dB. The amplified signal is unsteadily divided into two paths toward the carrier and the power amplifier by 900 hybrid couplers and demonstrates 27.6 dB and 28.3 dB of gain along with 83.2% and 84.5% of power added efficiency at average output power of 40 dBm. The high efficiency and almost flatness in gain stability of proposed DPA providing better solution in order to overcome the interference and the broadband issues for LTE communication cells. The balun-filtered network is employed for combined the two outputs of carrier and peak amplifiers that provides more uniform desired band of operation in the frequency responses. The proposed DPA circuit are implemented and optimized by using advanced design RF simulator platform. The fabricated chip is made by using 0.13 ?m GaN HEMT on Si-Nitride monolithic microwave integrated circuit die process. The fabricated chip of DPA provides 85% of PAE with 28 dB gain which are made close agreement with simulation results. The size of chip is 2.8*1.2mm2 which occupies less die area as compared to existing DPAs. © 2018 Wiley Periodicals, Inc.
A high efficiency on-chip reconfigurable Doherty power amplifier for LTE communication cells
(2018) Kumar, R.; Kanuajia, B.K.; Dwari, S.; Kumar, S.; song, H.
In this paper, a high efficiency on-chip reconfigurable Doherty power amplifier (DPA) with proposed topology is proposed for LTE or 4G communication cells. The proposed DPA consists of input driver topology, hybrid coupler, asymmetric amplifiers, and 1:1 balun filtered network. The proposed input driver circuit provides wide amplified signal operation within range of 2.3GHz to 6GHz with flat gain of 33 dB. The amplified signal is unsteadily divided into two paths toward the carrier and the power amplifier by 900 hybrid couplers and demonstrates 27.6 dB and 28.3 dB of gain along with 83.2% and 84.5% of power added efficiency at average output power of 40 dBm. The high efficiency and almost flatness in gain stability of proposed DPA providing better solution in order to overcome the interference and the broadband issues for LTE communication cells. The balun-filtered network is employed for combined the two outputs of carrier and peak amplifiers that provides more uniform desired band of operation in the frequency responses. The proposed DPA circuit are implemented and optimized by using advanced design RF simulator platform. The fabricated chip is made by using 0.13 ?m GaN HEMT on Si-Nitride monolithic microwave integrated circuit die process. The fabricated chip of DPA provides 85% of PAE with 28 dB gain which are made close agreement with simulation results. The size of chip is 2.8*1.2mm2 which occupies less die area as compared to existing DPAs. 2018 Wiley Periodicals, Inc.
Investigation of CMOS Based Integration Approach Using DAI Technique for Next Generation Wireless Networks
(2019) Roy, G.M.; Kanuajia, B.K.; Dwari, S.; Kumar, S.; Song, H.
This research work investigates a CMOS based low noise amplifier (LNA) using differential active inductor with eight-shaped patch antenna for next generation wireless communication. The proposed work conceded into three different phases. The first phase proposes LNA architecture which includes multistage cascode amplifier with a gate inductor gain peaking technique. The ground approach for this architecture employs active inductor technique that includes two stages of differential amplifier. The proposed novel technique leads to give incremental in inductance by using of common mode feedback resistor and lowers the undesirable parasitic resistance effect. Additionally, this technique offers gain enhanced noise cancellation and achieves a frequency band of around 5.7 GHz. The proposed architecture includes single stage differential AI and enhances the bandwidth up to 6.8 GHz with peak gain of 21 dB at 7.8 GHz. The noise figure and stability factor are achieved which is reasonably good at 1 dB. The proposed architecture is design and optimized on advanced design RF simulator using 0.045 m CMOS process technology. While in second phase, a narrow band eight-shaped patch antenna is designed which provides operating band range from 5.8 to 6.5 GHz with 6.2 GHz resonating frequency. Highest peak gain of 15 dB and maximum radiation power of 42.5 dBm is succeed by proposed antenna. The final phase provides integration strategy of LNA with antenna and achieves desired gain of nearly 21 dB with minimum NF of 1.2 1.5 dB in the same band. 2018, Springer Science+Business Media, LLC, part of Springer Nature.
Investigation of CMOS Based Integration Approach Using DAI Technique for Next Generation Wireless Networks
(Springer New York LLC barbara.b.bertram@gsk.com, 2019) Roy, G.M.; Kanuajia, B.K.; Dwari, S.; Kumar, S.; Song, H.
This research work investigates a CMOS based low noise amplifier (LNA) using differential active inductor with eight-shaped patch antenna for next generation wireless communication. The proposed work conceded into three different phases. The first phase proposes LNA architecture which includes multistage cascode amplifier with a gate inductor gain peaking technique. The ground approach for this architecture employs active inductor technique that includes two stages of differential amplifier. The proposed novel technique leads to give incremental in inductance by using of common mode feedback resistor and lowers the undesirable parasitic resistance effect. Additionally, this technique offers gain enhanced noise cancellation and achieves a frequency band of around 5.7 GHz. The proposed architecture includes single stage differential AI and enhances the bandwidth up to 6.8 GHz with peak gain of 21 dB at 7.8 GHz. The noise figure and stability factor are achieved which is reasonably good at 1 dB. The proposed architecture is design and optimized on advanced design RF simulator using 0.045 µm CMOS process technology. While in second phase, a narrow band eight-shaped patch antenna is designed which provides operating band range from 5.8 to 6.5 GHz with 6.2 GHz resonating frequency. Highest peak gain of 15 dB and maximum radiation power of 42.5 dBm is succeed by proposed antenna. The final phase provides integration strategy of LNA with antenna and achieves desired gain of nearly 21 dB with minimum NF of 1.2–1.5 dB in the same band. © 2018, Springer Science+Business Media, LLC, part of Springer Nature.
Reconfigurable Wide Bandwidth Using Novel Extraction Technique of Slotted Monopole Antenna with RF CNT Network
(2019) Kumar, S.; Song, H.; Kanuajia, B.K.
This work first moment focuses on the concept of reconfigurable wide bandwidth using novel extraction technique of slotted monopole antenna with RF carbon nanotube (CNT) network. The entire approach is folded into four different designs. The first design proposes a monopole antenna where asymmetric flower type corners and mushroom shape encloses by T-slot is cut on the patch. This new shaped antenna covers wide impedance bandwidth of about 14.5 GHz within range from 21.5 to 36 GHz. The proposed antenna observed that lower bands are excited with new resonating modes by inserting T-slot upon mushroom shape while higher bands are effected due to asymmetric flower type corners on the patch. A wide range of gain from 16.3 to 20.5 dB with maximum axial ratio bandwidth of 2.8% is also succeed. Measured and simulation results for proposed antenna shows good agreement with each other. In second design, a novel extraction technique is used for equivalent model of slotted monopole antenna which shows promising agreement with the original geometry. Thirdly, introduces RF CNT equivalent model which demonstrates its ability to resonant at wideband within range of 12.4 25.1 GHz with 68% of fractional impedance bandwidth. Finally, RF equivalent model of slotted monopole antenna is integrated with CNT for the proper operation. The fabrication of integration network scenario proves notability of reconfiguration in aspect of wide bandwidth with the compactness. A frequency switchable notability dominant some excited additional resonant modes using proper impedance matching between proposed antenna and RF CNT. This proposed work is fascinating to our integration network which fully covered K-band and almost for Ka-band application. 2018, Springer Science+Business Media, LLC, part of Springer Nature.
Reconfigurable Wide Bandwidth Using Novel Extraction Technique of Slotted Monopole Antenna with RF CNT Network
(Springer New York LLC barbara.b.bertram@gsk.com, 2019) Kumar, S.; Song, H.; Kanuajia, B.K.
This work first moment focuses on the concept of reconfigurable wide bandwidth using novel extraction technique of slotted monopole antenna with RF carbon nanotube (CNT) network. The entire approach is folded into four different designs. The first design proposes a monopole antenna where asymmetric flower type corners and mushroom shape encloses by T-slot is cut on the patch. This new shaped antenna covers wide impedance bandwidth of about 14.5 GHz within range from 21.5 to 36 GHz. The proposed antenna observed that lower bands are excited with new resonating modes by inserting T-slot upon mushroom shape while higher bands are effected due to asymmetric flower type corners on the patch. A wide range of gain from 16.3 to 20.5 dB with maximum axial ratio bandwidth of 2.8% is also succeed. Measured and simulation results for proposed antenna shows good agreement with each other. In second design, a novel extraction technique is used for equivalent model of slotted monopole antenna which shows promising agreement with the original geometry. Thirdly, introduces RF CNT equivalent model which demonstrates its ability to resonant at wideband within range of 12.4–25.1 GHz with 68% of fractional impedance bandwidth. Finally, RF equivalent model of slotted monopole antenna is integrated with CNT for the proper operation. The fabrication of integration network scenario proves notability of reconfiguration in aspect of wide bandwidth with the compactness. A frequency switchable notability dominant some excited additional resonant modes using proper impedance matching between proposed antenna and RF CNT. This proposed work is fascinating to our integration network which fully covered K-band and almost for Ka-band application. © 2018, Springer Science+Business Media, LLC, part of Springer Nature.