Browsing by Author "Gorre, P."

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A 0.15 μm GaN HEMT device to circuit approach towards dual-band ultra-low noise amplifier using defected ground bias technique
(Elsevier GmbH, 2023) Gupta, M.P.; Kumar, S.; Elizabeth Caroline, B.; Song, H.; Kumar, V.; Gorre, P.
This work presents a GaN HEMT device to circuit approach towards low noise amplifier (LNA) using defective ground bias (DGB) technique. This is the first MMIC GaN HEMT LNA design to offer dual-band of operation in both L and S-bands to the author's best knowledge. The proposed 0.15-μm GaN HEMT device fabrication achieves a high output power of 20 W using slot radiation phenomenon. The proposed DGB technique consists of gate and drain biasing topologies which achieves a dual-band of operation using microwave approach. The DGB technique is incorporated into GaN HEMT LNA which achieves high input and output power with good stability. To achieve an optimal noise, high I/O power, and almost flat gain at both L and S-bands, the defective ground structure of bias topologies is modeled and optimized. An artificial ground defect is created to offer resonant properties for the DGS of a microstrip line, which utilizes frequency-selective properties to improve the performance of the LNA circuit by suppressing the harmonics and scaling the size. The dedicated LNA shows the benefits of compact size, extremely low noise figure of 0.74/1.6 dB, high output power of 44 dBm and nearly flat gain of 14/11 dB at 1.17/2.49 GHz with the unique methodologies suggested. The compact GaN HEMT LNA could overcome the weak signal strength received by RF receiver for smart rail transport system. © 2023 Elsevier GmbH
A 2.71-pA/√Hz ultra-low noise, 70-dB dynamic range CMOS transimpedance amplifier with incorporated microstrip line techniques over extended bandwidth
(John Wiley and Sons Ltd, 2023) Gorre, P.; Vignesh, R.; Kumar, S.; Song, H.; Roy, G.M.
Recent advancements in the area of telemedicine have focused on remote patient monitoring services as a new frontier in medical applications. The present work reports a 65-nm complementary metal–oxide–semiconductor (CMOS)-based transimpedance amplifier (TIA) in an optical radar system for non-contact patient monitoring. A T-shaped microstrip line (MSL) integrated with variable gain common source TIA using MSL peaking technique and off-chip post-amplification integration is a newly proposed architecture to achieve a ultra-low noise, high dynamic range (DR) and high figure of merit over broadband than a traditional TIAs. First, the integrated T-shaped MSL develops an additional resonant frequency that resonates with a photodiode capacitance improving the bandwidth performance at higher Q values. Second, the shunt MSL peaking technique that introduces an additional conjugate pole-pair that cancels the effect of input capacitance helps to further improve the bandwidth of the TIA. Finally, an active feedback concept achieves a wide linear dynamic range enabling high TIA detectability. The proposed TIA realizes an impedance bandwidth of 770 MHz ranging from 7.12 to 7.89 GHz with a transimpedance gain of 105.1 dBΩ and ultra-low input-referred noise (IRN) density of 2.71 pA/√Hz. A high linear DR of 70 dB is achieved by employing a variable gain control scheme with a low group delay variation of 0.81 ns. The proposed work demonstrates a 1-Gb/s data rate while a bit-error rate less than 10−12 is achieved. The TIA consumes a power of 0.82 mW under the supply voltage of 1.2 V. © 2022 John Wiley & Sons Ltd.
A 28 nm CMOS low-noise amplifier with novel redundant noise cancellation technique beyond ultra-wideband for 6G-based wireless systems
(Elsevier GmbH, 2024) Naik, D.N.; Gorre, P.; Prasad Gupta, M.; Kumar, S.; Al-Shidaifat, A.; Song, H.
In the current scenario, almost 5G-based wireless systems have been deployed everywhere but still performance trade-offs of RF amplifiers in the sub-nanometer regime are challenging. In this work, a high-performance low-noise amplifier (LNA) is realized in a 28 nm CMOS process with a novel redundant noise cancellation technique (RnC). The proposed technique improves the noise figure (NF) beyond the ultra-wideband of a low-noise amplifier (LNA) and minimizes the trade-off in the 28 nm process. An ultra-low NF is achieved in two approaches; Firstly, a current mirror network is employed in the primary path to cancel the thermal noise of the dominant transistor of a common gate-common source (CG-CS) without an extra power supply. Secondly, an auxiliary amplifier stage is introduced here to reduce the noise which contributes to the current mirror circuit and cancels the distortion in CG-CS topology without violating the traditional noise cancellation condition. In addition, an analytical approach is followed to optimize the input impedance, gain bandwidth and noise figure. Hence, the proposed RnC LNA benefits in achieving good tradeoffs among gain, bandwidth, NF, and power consumption in 28 nm technology node. The proposed RnC LNA is analyzed and fabricated using CMOS 28 nm technology, occupying an area of 0.011 mm2. The proposed design achieves an optimum performance: nearly flat gain of 15.3 dB, minimum NF of 1.7 dB over 1.7 to 12.52 GHz, and an IIP3 of − 2.6 dBm at 6.5 GHz. The proposed LNA consumes ultra-low power consumption of 1.8 mW under the power supply of 1 V. © 2023
A 28-32GHz CMOS LNA with broadband approach for 5G Mm-wave communication cells
(Institute of Electrical and Electronics Engineers Inc., 2019) Vignesh, R.; Gorre, P.; Kumar, S.; Song, H.
This paper first time reports a wideband low noise amplifier (LNA) with achievable minimum atmospheric absorption frequency band for 5G millimeter wave communication cells. A novel suspended substrate line based parallel-series network is optimized and analyzed that demonstrates a wideband response. The proposed LNA consists of two stage Cascode topology with incorporated parallel-series network and microwave components that provides broadband ranging from 28GHz to 32GHz. A full of two stage Cascode LNA overcoming the traditional mismatching constraints with consideration of suspended substrate lines (SSL) and Tee-junction in the proposed design. It is observed that suspended lines reduce parasitic and bulk effects of devices and enables LNA to provide broadband communication for 5G macro and micro cells. The proposed design is realized using RF 65nm Magna Hynix CMOS process with layout cell. The simulation results reveals that 28GHz-32GHz wide band with maximum forward gain of 25dB. The minimum noise figure of 2.5dB is achieved with optimization of passive components. The input impedance (real and imaginary) and smith chart realization for LNA provides satisfactory performance. Â© 2019 IEEE.
A 61.2-dB?, 100 Gb/s Ultra-Low Noise Graphene TIA over D-Band Performance for 5G Optical Front-End Receiver
(Springer, 2021) Gorre, P.; Vignesh, R.; Song, H.; Kumar, S.
This work reports in first time a 100-Gb/s, ultra-low noise, variable gain multi-stagger tuned transimpedance amplifier (VGMST-TIA) over the D-band performance. The whole work is binding into two phases. The first phase involves the modeling and characterization of graphene field-effect transistor (GFET) with an optimized transition frequency of operation. While in the second phase, a TIA design employs a T-shaped symmetrical L-R network at the input, which mitigates the effect of photo diode capacitance and achieves a D-band of operation. The proposed work uses a VGMST to establish TIA, which realizes optimum noise performance. The high gain 3-stage VGMST-TIA effectively minimizes the white noise and illustrates a sharp out-of-band roll-off to achieve considerable noise reduction at high frequencies. The active feedback mechanism controls the transimpedance gain by tuning the control voltage which results better group delay. Besides, an L-C circuit is employed at the output to enhance bandwidth. The full TIA is implemented and fabricated using a commercial nano-manufacturing 9-nm graphene film FET on a silicon wafer using 0.065-?m process. The TIA achieves a flat transimpedance gain of 61.2 dB? with ± 9 ps group delay variation over the entire bandwidth. The proposed TIA measured an impedance bandwidth of 0.2 THz with ultra-low input-referred noise current density of 2.03 pA/?Hz. The TIA supports a 100-Gb/s data transmission due to large bandwidth; therefore, a bit-error-rate (BER) less than 10?12 is achieved. The chip occupies an area of 0.92 * 1.34 mm2 while consuming power of 21 mW under supply of 1.8 V. © 2021, The Author(s), under exclusive licence to Springer Science+Business Media, LLC part of Springer Nature.
A 64 ?dB?, 25 ?Gb/s GFET based transimpedance amplifier with UWB resonator for optical radar detection in medical applications
(Elsevier Ltd, 2021) Gorre, P.; Vignesh, R.; Song, H.; Kumar, S.
This work reports a novel Graphene Field Effect Transistor (GFET) based transimpedance amplifier (TIA) for optical radar detection in medical applications. Design-I includes a microstrip line (MSL) based UWB resonator circuit which enables the TIA design to operate in UWB range of frequency with high Q-factor. Design-II comprises MSL UWB resonator integrated stagger-tuned CR-RGC TIA which enhances the transimpedance limit and mitigates the effect of photodiode capacitance results in higher bandwidth performance. The proposed TIA realizes a 2.6 times lesser noise compared to the conventional CR-RGC TIA. A flat transimpedance gain of 64 ?dB? and ultra-low input-referred noise current density of 8.9 pA/?Hz are achieved using gain and noise optimization methods. Additionally, a dynamic range of 49 ?dB with a group delay variation (GDV) of ±25 ps is achieved over the entire UWB range. The TIA demonstrates a 25 ?Gb/s data rate while a bit-error-rate (BER) less than 10?10 is achieved. The chip occupies an area of 0.67?0.72 ?mm2 while consuming power of 19 ?mW under the supply voltage of 1.8 ?V. © 2021 Elsevier Ltd
A 73% PAE, Highly Gain Inverse Class-F Power Amplifier for S-Band Applications
(Springer Science and Business Media Deutschland GmbH, 2021) Naik, J.D.; Gorre, P.; Kumar, R.; Kumar, S.; Song, H.
This paper proposes a continuous-mode inverse Class F power amplifier (PA) achieving wide bandwidth, high output power, and high efficiency. This work includes transmission line-based output/input matching networks and single-ended topology. The main focus of the work is to achieve a high gain with wide bandwidth. The proposed structure incorporates a termination of even and odd harmonics to deliver voltage and current waveform isolation with minimal matching network (MN) design complexities. The analyses simulated in Keysight Technologies Advanced Design System (ADS), which results in a wideband PA design. The results are quantified by using high power-added efficiency (PAE) and output power. PAE of 72.6% and output power more than 41Â dBm obtained over wide bandwidth 2â€“4.2Â GHz at âˆ’3Â dB gain compression. The proposed PA could overcome the traditional performance and utilize for green communication. Â© 2021, Springer Nature Singapore Pte Ltd.
A High-Sensitive High-Input Impedance CMOS Front-End Amplifier for Neural Spike Detection
(Springer Science and Business Media Deutschland GmbH, 2023) Naik, J.D.; Gorre, P.; Al-Shidaifat, A.D.; Kumar, S.; Song, H.
Neural spikes detection and monitoring for neuro-prosthetic applications require an efficient and robust front-end amplifier (FEA), which regulates the fidelity of the neural signal. This paper presents neutralization and bootstrapping techniques to overcome the input leakage currents produced by amplifiers of the input bias network. In addition, a pseudo-resistor technique ensures the FEA maintains a high-input impedance. The CMOS-based FEA architecture is executed in the advanced design system with the design kit of the CMOS process. The proposed design achieves a high-input impedance of 0.5 TÎ© with a maximum simulation gain of 66.2Â dB. The overall power consumption of the topology is observed as 2.6Â ÂµW with a power supply voltage of 0.9Â V. The simulated noise performance of 6 nV/âˆšHz at 1Â kHz demonstrates a high-sensitive design compared to the previous works. It is highly recommended for succeeding neuro-prosthetic applications. Â© 2023, The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd.
A K/Ka-Band Switchless Reconfigurable 65 nm CMOS LNA Based on Suspended Substrate Coupled Line
(Institute of Electrical and Electronics Engineers Inc., 2022) Vignesh, R.; Gorre, P.; Song, H.; Kumar, S.
This article presents a K/Ka (18-40) GHz dual-band switch-free reconfigurable 65nm CMOS Low-Noise Amplifier (LNA) realized by inter-stage and output-stage Suspended-Substrate Coupled-Lines (SSCL) for the first time to the author's best knowledge. The amplified input signal from the broadband drive stage is divided into two parallel single band stages by the proposed inter-stage SSCL. Two split-band signals are amplified by the corresponding High-band (Ka) and Low-band (K) stages. The proposed output-stage SSCL combines the amplified two single-bands at the output. The proposed SSCL also provides the required network matching to the LNA. The single band of operation can be achieved by simply turning off the unused transistor band's drain voltage. The proposed LNA achieves a maximum noise figure (NF) taken in dual-mode of 1 dB and 1.2 dB and a gain of 27 dB with 0.2 dB and 2 dB variation in the K-band and Ka-band, respectively. Statistical analysis and design of experiment (DoE) are applied to predict the percentage error tolerance and validate the contribution of the parameters towards gain, return loss, and noise figure. This LNA exhibits an input and output 1-dB compression point (IP1dB OP1dB), third-order input output intercept point (IIP3 OIP3) of -17/-16 dBm, +7.1/6.4 dBm, 0 dBm and +25/+23 dBm over 18-24/25-40 GHz respectively. The fabricated LNA draws 21.4 mA from 1.2 V with a size of 0.61 $\times $ 0.92 mm2. © 2013 IEEE.
A new design approach of Rat-Race coupler based compact GaN HEMT power amplifier towards flat high efficiency over broadband
(Elsevier GmbH, 2024) Gupta, M.P.; Kumar, S.; Naik Jatoth, D.; Gorre, P.; Song, H.
This paper presents a high efficiency Rat-Race Coupler based compact GaN HEMT power amplifier (PA) design over broadband for high power transmitter in wireless communication. The rat-race coupler integrated PA Compact design is proposed for the first time as per author best knowledge. The design methodology used a higher order two open stubs and a rat-race coupler (RRC) at input/output sections to control harmonics impedances. The RRC is used to enhance the i/o power, and efficiency over broadband, which provides a good insertion loss, and consumes the least power and non-crucial impedance bandwidth for the normalized frequency band of interest. As a proof of concept, a PA is fabricated using a monolithic microwave integrated circuit (MMIC) 0.15 µm gallium nitride high electron mobility transistor (GaN HEMT) process. The measured result shows that the designed PA achieves a flat power added efficiency (PAE) of 65 % − 74 %, output power (Pout) of 44.8 dBm − 46 dBm, and drain efficiency (DE) of 72 % − 85 %, over a record wide frequency of 1.8 GHz − 3.6 GHz, which is the highest one among all reported harmonic tuned PAs. © 2024 Elsevier GmbH
A novel wide bandwidth FBSSIR integrated low noise amplifier for satellite navigational receiver system
(Elsevier Ltd, 2021) Vignesh, R.; Gorre, P.; Kumar, S.
This paper presents a Folded Butterfly Stub Stepped Impedance Resonator (FBSSIR) integrated low noise amplifier (LNA) implemented using packaging technology for the satellite navigation receiver system. By employing a novel structural deformation of a stepped-impedance-resonator (SIR), the proposed FBSSIR is achieved with a more compact structure, controllable transmission zero, adjustable center frequency, and adjustable bandwidth. The designed FBSSIR acts as a filter, and the input-output matching network is integrated into the proposed core LNA circuit. The Design-of-experiment (DoE) analysis is performed to analyze the passive component's sensitivity becoming desensitized, while statistical analysis is presented for the proposed FBSSIR integrated LNA to predict the percentage error tolerance. Its measurement result provides gain above 22 dB in the wide bandwidth from 1.6 GHz to 2.5 GHz, minimum NF of 2.7 dB at 1.8 GHz, which varies from 3 dB to 4.5 dB. The calculated area of FBSSIR integrated LNA is 10.7 × 2 cm2, while LNA is 3.3 × 1.6 cm2. It exhibits an input and output 1-dB compression point (IP1dB & OP1dB) of ?23dBm and +2.3dBm. © 2021
A Review of mm-Wave Power Amplifiers for Next-Generation 5G Communication
(Springer, 2020) Gorre, P.; Vignesh, R.; Arya, R.; Kumar, S.
In this paper, a review study of millimeter wave-based power amplifiers for 5G communication is presented. This literature mainly focuses on major component of the RF transceiver IC, i.e., power amplifier (PA). The upcoming 5G communication envisioned broadband modulation, high speed data rate, and new integration technologies which could overcome key challenges in the design of mobile devices and communication buildings. The power amplifiers in the 5G base station require high output powers (ranging from 2 to 10Â W), high efficiency (up to 95%), and high gain (up to 40Â dB). The basic building blocks, device technologies, architecture of RF power amplifiers, and parametric performances will be considered in this review. This study reviewed all device technologies (especially IV and III-V semiconductor technologies) for power amplifiers and found that a gallium nitride (GaN)-based PA is the best candidate to provide high output power, high efficiency, and high back-off power. In addition, various architectures of PAs have been reported while doherty power amplifier is one of best candidate for 5G base station. Â© 2020, Springer Nature Singapore Pte Ltd.
A strip line technique based 1 Gb/s, 70-dB linear dynamic range transimpedance amplifier towards LiDAR unmanned vehicle application
(Elsevier Ltd, 2022) Gorre, P.; Vignesh, R.; Kumar, S.
1This work reports a Microstrip Line (MSL) based Dual-Gate MOSFET (DGMOSFET) Transimpedance amplifier (TIA) for LIDAR unmanned vehicle application under different weather conditions. TIA (Design-I) is proposed under normal weather, while TIA (Design-II) for foggy weather conditions. TIA (Design-I) employs a variable gain common gate topology with post-amplification, resulting in high gain, wide bandwidth, and high dynamic range (DR). TIA (Design-II) incorporates a series MSL section at the input of TIA (Design-I), which further enhances the bandwidth performance. TIA (Design-I) realizes a fractional bandwidth of 104.3% with a transimpedance gain of 100.4 dBΩ and low input-referred noise (IRN) density of 4.29 pA/√Hz. TIA (Design-II) achieves a fractional bandwidth of 178.4% with transimpedance gain, IRN, and DR of 100.42 dBΩ, 3.81 pA/√Hz, and 70 dB, respectively. TIA (Design-II) demonstrates a 1 Gb/s data rate with a bit-error-rate < 10−10. The TIA (Design-I) and TIA (Design-II) consume the power of 33 mW and 39 mW under the supply voltage of 2 V. © 2022 Elsevier Ltd
A Wideband Microstrip Line-Based Balun Structure for High Power Amplifier Applications
(Springer Science and Business Media Deutschland GmbH, 2023) Gupta, M.P.; Gorre, P.; Kumar, S.; Song, H.
This paper proposes a balun matching technique to achieving a high output power and wide bandwidth. The proposed structure includes microstrip transmission line-based even and odd mode-matching circuits. A three-port unipolar microstrip line is designed to transform the balanced load termination to 50 Î© unbalanced port impedance. The proposed network design is based on real symmetrical four port network with open ended transmission line is inserted between the middle of the structure. To improve the isolation, transmission coefficient parameter and match the 50 Î© termination, a resistive network is inserted between the two balanced ports. The proposed structure is simulated in Keysight Technologies Advanced Design System (ADS), fabrication is done by using 0.51Â mm RT Duriod substrate alignments. To verify the design concept, first of all, a wideband microstrip matching technique is designed and characterized at the frequency of L5 band (1.17Â GHz). Then a prototype of microstrip transmission line-based wideband balun matching circuit is designed and fabricated. Analytical design equations have been derived for the even mode as well as odd mode techniques which satisfied the results. The proposed balun could overcome power loss mechanism over traditional transmission line structures and can utilize for high power application. Â© 2023, The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd.
A wideband, 25/40dBm high I/O power GaN HEMT ultra-low noise amplifier using even-odd mode techniques
(Elsevier Ltd, 2022) Gupta, M.P.; Gorre, P.; Kumar, S.; Nulu, V.
This paper presents a performance analysis of the low noise amplifier (LNA) for the first time using even-odd mode matching techniques in Gallium Nitride (GaN) HEMT Technology for marine communication. The proposed GaN LNA circuit consists of broadband stage I, main amplifier, and inverted broadband stage II, which provides a high input/output power, and ultra-low noise over wide bandwidth ranging from 0.5 GHz to 2.7 GHz with fractional impedance bandwidth of 138%. Broadband Stage I and Inverted broadband stage II are employed to provide input/output impedance matching transformation. The proposed LNA circuit with the incorporation of input/output broadband stages relax a 50Ω matching constraints and achieved high input and output power with good stability. The GaN HEMT LNA is analyzed and simulated using the RF simulator (ADS tool). The proposed GaN HEMT LNA is fabricated on RT Duroid substrate using Microwave Integrated Circuit (MIC) technology. The proposed LNA achieves a measured gain of 16 dB, while the simulated one is 17 dB with good insertion loss. An ultra-low noise figure of 0.6 dB flat is achieved over a wide bandwidth. In addition, the high output power is achieved 40dBm while input power is 25dBm which could overcome weak signal strength received by RF receiver for marine communication. A stability factor greater than one is achieved over a broad band ranging from 0.5 GHz to 2.7 GHz. The fabricated GaN HEMT LNA circuit has consumed power of 120 mW under a supply of 28 V. The area of the fabricated RF GaN HEMT LNA is 32 × 26 mm2. © 2022 Elsevier Ltd
An artificial bridge circuit approach between two biological neurons using nanoscale topologies towards paralytic disorders
(Elsevier Ltd, 2023) Haque, M.N.; Gorre, P.; Naik, D.N.; Kumar, S.; Al-Shidaifat, A.; Song, H.
The advent of Nanoscale IC technology towards pulse-based neural systems reactivates the dead nervous about restoring the functionality of paralytic disorders. This work reports in first time a design of a novel CMOS biological neuron system, which replaces a dead neuron between two neurons to restore communication in paralyzed individuals. The work binds into three stages: design of a spiking leaky Integrator and Fire (LIF) neuron with refractory period mechanisms, which achieves a low power consumption of 2.4 μW, in the first stage; an adaptive homeostatic synapse with short and long-term spike plasticity, that reconfigure the spiking neuron networks of multichannel sensor electrodes to record the electric signal from the active cell as second stage; the final stage presents a low-power common source current reuse regulated cascode (CS-CR-RGC) TIA for amplifying the weak synapse current signal, which achieves a high gain of 135.71 dBΩ with an optimized noise performance of 0.19 pA/Hz. The entire work is designed and implemented using a CMOS 65 nm commercial process that occupies a die area of 400 μm × 120 μm. © 2023
An Efficient Band CMOS LNA for Satellite-Based Remote Sensing Application
(Springer Science and Business Media Deutschland GmbH, 2023) Roy, G.M.; Kumar, S.; Gorre, P.
The paper demonstrates an efficient band CMOS LNA for satellite-based remote sensing application using 45Â nm CMOS technology. The designed LNA comprises of a two stage cascode amplifier with shunt resistance feedback and dual inductive peaking (SRF-DIP) technique with source and gate inductive degeneration. The received band is 35.7Â GHz that ranges from 61â€“96.7Â GHz. The maximum power gain is 22.2Â dB at resonant frequency of 74.7Â GHz. The minimum noise figure is 1.25Â dB at 60Â GHz. The noise figure and power gains are calculated theoretically as well. The DC current Id is measured between 20â€“25Â mA for the drain voltage of 0â€“1.2Â V. Â© 2023, The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd.
Design of Power Combiner and Power Divider at Ku Frequency Band Applications
(Institute of Electrical and Electronics Engineers Inc., 2023) Kumar, B.S.; Gorre, P.; Babu, B.R.; Samantaray, A.K.; Naik, D.N.; Kumar, S.
This paper presents the design of a Ku band power combiner and divider, operating within the frequency range of 12 GHz to 16 GHz. The power combiner achieves S(1,1) values of -23.17 dB, -19.47 dB, and -20.97 dB at 13 GHz, 13.87 GHz, and 14.77 GHz and S(1,2) values of -11.012dB at 13.98 GHz and S(1,3) value of -12.470 dB at 14.01 GHz and S(2,2) values of - 37.028dB at 13.28GHz respectively. Meanwhile, the power divider achieves S(1,1) values of -40 dB and -33 dB at 12.8 GHz and 13.8GHz and S(1,2) values of -13.173 dB at 13.02GHz and S(1,3) values of -15.590 dB at 13.02GHz and S(2,2) value of -21.744dB at 12.98GHz and S(2,2) value of -17.567 dB at 14.98 GHz respectively. The substrate employed is a 1.6mm thick FR-4 material. Â© 2023 IEEE.
High Efficiency Broadband Class F Power Amplifier for Sub-6-GHz 5G Application
(Institute of Electrical and Electronics Engineers Inc., 2023) Manoj, H.; Prasad Gupta, M.S.; Deepak Naik, J.; Gorre, P.; Kumar, S.
This paper presents a performance analysis of the high efficiency broadband Class F Power Amplifier using even-odd mode matching techniques in Gallium Nitride HEMT Technology for Sub-6-GHz 5G Application. The proposed design circuit consists of broadband input matching network which provides a wideband operation by canceling higher harmonics, high efficiency Class F main amplifier, and series shunt network to enhance the bandwidth. The proposed PA with built-in techniques achieves a fractional impedance bandwidth of 110% in frequency range 2 GHz to 5GHz. The GaN HEMT PA is analyzed and simulated using Keysight's Advanced Design System simulator. A maximum drain efficiency of 78.82% is achieved with a power gain ranging from 10~14 dBm. In addition, an output power > 40 dBm is achieved with the proposed design with drain voltage of 28 V. Â© 2023 IEEE.
High Efficiency Broadband Mixed Mode Power Amplifier for Patient Monitoring
(Institute of Electrical and Electronics Engineers Inc., 2021) Surve, V.; Kumar, S.; Gorre, P.
In this paper, the wideband operation of mixed mode Class F power amplifier has been presented for biomedical application in patient monitoring. The proposed work involves a reactance compensation technique, which provides a 10 W output power for a frequency range of 0.3-2.4 GHz while achieving efficiency of 66.81-76.82% over 155.55% fractional bandwidth. The large signal gain ranging from 11~13 dB and output power greater than 40 dBm. The PAE ranges from 55 to 72%. Layout of proposed circuit is generated using Modelithics components to verify the circuit implementation. Â© 2021 IEEE.