Browsing by Author "Gandla, S."

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    Development of low temperature stoichiometric solution combustion derived transparent conductive ternary zinc tin co-doped indium oxide electrodes
    (2017) Pujar, P.; Gandla, S.; Singh, M.; Gupta, B.; Tarafder, K.; Gupta, D.; Noh, Y.-Y.; Mandal, S.
    Here, the development of transparent conductive zinc tin co-doped indium oxide (IZTO: In1.4Sn0.3Zn0.3O3) ternary electrodes is addressed through low temperature solution combustion processing. Optimization of fuel to oxidizer ratio offers low temperature (?130 C) of combustion with balanced redox reaction. The thin films of IZTO annealed at different temperatures showed a decreasing trend in the resistivity with a fixed order of 10-2 ? cm and the film with a highest Hall mobility of 5.92 cm2 V-1 s-1 resulted at 400 C. All the films with different temperatures of annealing were smooth (rms ? 2.42 nm) in nature and the IZTO film annealed at 200 C is 83% transparent in the visible spectra. The effective band gap of 0.9 eV determined from first-principles density functional theory gives clear evidence for the conducting nature of IZTO. The thin film transistor fabricated with IZTO as a gate electrode with poly(methyl methacrylate) and pentacene as the dielectric and channel material, respectively, exhibited a saturation mobility of 0.44 cm2 V-1 s-1 and Ion/Ioff ratio of 103. Further, the printability of the IZTO combustible precursor is established which resulted in anti-edge deposition of the printed feature. 2017 The Royal Society of Chemistry.
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    Development of low temperature stoichiometric solution combustion derived transparent conductive ternary zinc tin co-doped indium oxide electrodes
    (Royal Society of Chemistry, 2017) Pujar, P.; Gandla, S.; Singh, M.; Gupta, B.; Tarafder, K.; Gupta, D.; Noh, Y.-Y.; Mandal, S.
    Here, the development of transparent conductive zinc tin co-doped indium oxide (IZTO: In1.4Sn0.3Zn0.3O3) ternary electrodes is addressed through low temperature solution combustion processing. Optimization of fuel to oxidizer ratio offers low temperature (?130 °C) of combustion with balanced redox reaction. The thin films of IZTO annealed at different temperatures showed a decreasing trend in the resistivity with a fixed order of 10-2 ? cm and the film with a highest Hall mobility of 5.92 cm2 V-1 s-1 resulted at 400 °C. All the films with different temperatures of annealing were smooth (rms ? 2.42 nm) in nature and the IZTO film annealed at 200 °C is 83% transparent in the visible spectra. The effective band gap of 0.9 eV determined from first-principles density functional theory gives clear evidence for the conducting nature of IZTO. The thin film transistor fabricated with IZTO as a gate electrode with poly(methyl methacrylate) and pentacene as the dielectric and channel material, respectively, exhibited a saturation mobility of 0.44 cm2 V-1 s-1 and Ion/Ioff ratio of 103. Further, the printability of the IZTO combustible precursor is established which resulted in anti-edge deposition of the printed feature. © 2017 The Royal Society of Chemistry.
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    High-Intensity Ultrasound-Assisted Low-Temperature Formulation of Lanthanum Zirconium Oxide Nanodispersion for Thin-Film Transistors
    (American Chemical Society service@acs.org, 2020) Pujar, P.; Madaravalli Jagadeeshkumar, K.K.; Naqi, M.; Gandla, S.; Cho, H.W.; Jung, S.H.; Cho, H.K.; Kalathi, J.T.; Kim, S.
    The process complexity, limited stability, and distinct synthesis and dispersion steps restrict the usage of multicomponent metal oxide nanodispersions in solution-processed electronics. Herein, sonochemistry is employed for the in situ synthesis and formulation of a colloidal nanodispersion of high-permittivity (?) multicomponent lanthanum zirconium oxide (LZO: La2Zr2O7). The continuous propagation of intense ultrasound waves in the aqueous medium allows the generation of oxidant species which, on reaction, form nanofragments of crystalline LZO at ?80 °C. Simultaneously, the presence of acidic byproducts in the vicinity promotes the formulation of a stable as-prepared LZO dispersion. The LZO thin film exhibits a ? of 16, and thin-film transistors (TFTs) based on LZO/indium gallium zinc oxide operate at low input voltages (?4 V), with the maximum mobility (?) and on/off ratio (Ion/Ioff) of 5.45 ± 0.06 cm2 V-1 s-1 and ?105, respectively. TFTs based on the compound dielectric LZO/Al2O3 present a marginal reduction in leakage current, along with enhancement in ? (6.16 ± 0.04 cm2 V-1 s-1) and Ion/Ioff (?105). Additionally, a 3 × 3 array of the proposed TFTs exhibits appreciable performance, with a ? of 3-6 cm2 V-1 s-1, a threshold voltage of -0.5 to 0.8 V, a subthreshold swing of 0.3-0.6 V dec-1, and an Ion/Ioff of 1-2.5 (×106). © © 2020 American Chemical Society.