Browsing by Author "Cahay, M."

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Dependence of the 0.5 (2e2/h) conductance plateau on the aspect ratio of InAs quantum point contacts with in-plane side gates
(2017) Das, P.P.; Jones, A.; Cahay, M.; Kalita, S.; Mal, S.S.; Sterin, N.S.; Yadunath, T.R.; Advaitha, M.; Herbert, S.T.
The observation of a 0.5 (2e2/h) conductance plateau in asymmetrically biased quantum point contacts (QPCs) with in-plane side gates (SGs) has been attributed to the onset of spin-polarized current through these structures. For InAs QPCs with the same width but a longer channel length, there is roughly a fourfold increase in the range of common sweep voltage applied to the SGs over which the 0.5 (2e2/h) plateau is observed when the QPC aspect ratio (ratio of length over the width of the narrow portion of the structure) is increased by a factor 3. Non-equilibrium Green's function simulations indicate that the increase in the size of the 0.5 (2e2/h) plateau is due to an increased importance, over a larger range of common sweep voltage, of the effects of electron-electron interactions in QPC devices with a larger aspect ratio. The use of asymmetrically biased QPCs with in-plane SGs and large aspect ratio could therefore pave the way to build robust spin injectors and detectors for the successful implementation of spin field effect transistors. 2017 Author(s).
Dependence of the 0.5 × (2e2/h) conductance plateau on the aspect ratio of InAs quantum point contacts with in-plane side gates
(American Institute of Physics Inc. subs@aip.org, 2017) Das, P.P.; Jones, A.; Cahay, M.; Kalita, S.; Mal, S.S.; Sterin, N.S.; Yadunath, T.R.; Advaitha, M.; Herbert, S.T.
The observation of a 0.5 × (2e2/h) conductance plateau in asymmetrically biased quantum point contacts (QPCs) with in-plane side gates (SGs) has been attributed to the onset of spin-polarized current through these structures. For InAs QPCs with the same width but a longer channel length, there is roughly a fourfold increase in the range of common sweep voltage applied to the SGs over which the 0.5 × (2e2/h) plateau is observed when the QPC aspect ratio (ratio of length over the width of the narrow portion of the structure) is increased by a factor 3. Non-equilibrium Green's function simulations indicate that the increase in the size of the 0.5 × (2e2/h) plateau is due to an increased importance, over a larger range of common sweep voltage, of the effects of electron-electron interactions in QPC devices with a larger aspect ratio. The use of asymmetrically biased QPCs with in-plane SGs and large aspect ratio could therefore pave the way to build robust spin injectors and detectors for the successful implementation of spin field effect transistors. © 2017 Author(s).
Redox-Active Vanadium-Based Polyoxometalate as an Active Element in Resistive Switching Based Nonvolatile Molecular Memory
(Wiley-VCH Verlag info@wiley-vch.de, 2020) Sterin, N.S.; Basu, N.; Cahay, M.; Satyanarayan, M.N.; Mal, S.S.; Das, P.P.
Resistive switching (RS)-based random access memory has been envisaged as a viable alternative to existing memory technology due to its nonvolatility, high switching speed, high endurance/retention, and considerably low operating voltage. Herein, a new uniform, repetitive, and stable RS phenomenon is demonstrated based on very low-cost two-terminal metal–insulator–metal stack fabricated using a highly redox-active vanadium-based polyoxometalate (POM) molecular clusters, [V10O28]6?—belonging to polyoxovanadate (POV) family. The RS is observed to be unipolar and nonvolatile in nature, and occur at a fairly low operating bias voltage (less than 2 V), making it suitable for low-power operations. The switching event is attributed to the cycling between formation and rupture of tiny conductive nanofilaments formed due to trapping and detrapping of positively charged ionized oxygen vacancy sites present in the active switching layer of [V10O28]6?. POMs, in their rich abundance, are highly stable early transition-metal oxide nanosized clusters, capable of storing as well as releasing a large number of electrons. In addition, they can undergo fast and reversible redox reactions (both in solid and liquid electrolyte media) in “stepwise” manner—a property that makes them a promising candidate for ultrafast and multi-level nonvolatile molecular memory for high-density data storage. Preliminary investigations on the POV-based memory cells result in device resistance ratio ?25, endurance for more than 200 cycles, and stable retention time around 2200 s, in fully open air condition. © 2020 Wiley-VCH GmbH
Width dependence of the 0.5 × (2e2/h) conductance plateau in InAs quantum point contacts in presence of lateral spin-orbit coupling
(Nature Publishing Group Houndmills Basingstoke, Hampshire RG21 6XS, 2019) Das, P.P.; Cahay, M.; Kalita, S.; Mal, S.S.; Jha, A.K.
The evolution of the 0.5Go (Go = 2e2/h) conductance plateau and the accompanying hysteresis loop in a series of asymmetrically biased InAs based quantum point contacts (QPCs) in the presence of lateral spin-orbit coupling (LSOC) is studied using a number of QPCs with varying lithographic channel width but fixed channel length. It is found that the size of the hysteresis loops is larger for QPCs of smaller aspect ratio (QPC channel width/length) and gradually disappears as their aspect ratio increases. The physical mechanisms responsible for a decrease in size of the hysteresis loops for QPCs with increasing aspect ratio are: (1) multimode transport in QPCs with larger channel width leading to spin-flip scattering events due to both remote impurities in the doping layer of the heterostructure and surface roughness and impurity (dangling bond) scattering on the sidewalls of the narrow portion of the QPC, and (2) an increase in carrier density resulting in a screening of the electron-electron interactions in the QPC channel. Both effects lead to a progressive disappearance of the net spin polarization in the QPC channel and an accompanying reduction in the size of the hysteresis loops as the lithographic width of the QPC channel increases. © 2019, The Author(s).
Width dependence of the 0.5 � (2e2/h) conductance plateau in InAs quantum point contacts in presence of lateral spin-orbit coupling
(2019) Das, P.P.; Cahay, M.; Kalita, S.; Mal, S.S.; Jha, A.K.
The evolution of the 0.5Go (Go = 2e2/h) conductance plateau and the accompanying hysteresis loop in a series of asymmetrically biased InAs based quantum point contacts (QPCs) in the presence of lateral spin-orbit coupling (LSOC) is studied using a number of QPCs with varying lithographic channel width but fixed channel length. It is found that the size of the hysteresis loops is larger for QPCs of smaller aspect ratio (QPC channel width/length) and gradually disappears as their aspect ratio increases. The physical mechanisms responsible for a decrease in size of the hysteresis loops for QPCs with increasing aspect ratio are: (1) multimode transport in QPCs with larger channel width leading to spin-flip scattering events due to both remote impurities in the doping layer of the heterostructure and surface roughness and impurity (dangling bond) scattering on the sidewalls of the narrow portion of the QPC, and (2) an increase in carrier density resulting in a screening of the electron-electron interactions in the QPC channel. Both effects lead to a progressive disappearance of the net spin polarization in the QPC channel and an accompanying reduction in the size of the hysteresis loops as the lithographic width of the QPC channel increases. � 2019, The Author(s).